ChipFind - документация

Электронный компонент: 2SC3356

Скачать:  PDF   ZIP
DATA SHEET
SILICON TRANSISTOR
2SC3356
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DATA SHEET
Document No. P10356EJ5V1DS00 (5th edition)
Date Published March 1997 N
Printed in Japan
1985
DESCRIPTION
The 2SC3356 is an NPN silicon epitaxial transistor designed for low
noise amplifier at VHF, UHF and CATV band.
It has dynamic range and good current characteristic.
FEATURES
Low Noise and High Gain
NF = 1.1 dB TYP., G
a
= 11 dB TYP. @V
CE
= 10 V, I
C
= 7 mA, f = 1.0 GHz
High Power Gain
MAG = 13 dB TYP. @V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (T
A
= 25

C)
Collector to Base Voltage
V
CBO
20
V
Collector to Emitter Voltage
V
CEO
12
V
Emitter to Base Voltage
V
EBO
3.0
V
Collector Current
I
C
100
mA
Total Power Dissipation
P
T
200
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
65 to +150
C
ELECTRICAL CHARACTERISTICS (T
A
= 25

C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
I
CBO
1.0
A
V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current
I
EBO
1.0
A
V
EB
= 1.0 V, I
C
= 0
DC Current Gain
h
FE
*
50
120
300
V
CE
= 10 V, I
C
= 20 mA
Gain Bandwidth Product
f
T
7
GHz
V
CE
= 10 V, I
C
= 20 mA
Feed-Back Capacitance
C
re
**
0.55
1.0
pF
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
Insertion Power Gain
S
21
e
2
11.5
dB
V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
Noise Figure
NF
1.1
2.0
dB
V
CE
= 10 V, I
C
= 7 mA, f = 1.0 GHz
*
Pulse Measurement PW
350
s, Duty Cycle
2 %
** The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.
h
FE
Classification
Class
R23/Q *
R24/R *
R25/S *
Marking
R23
R24
R25
h
FE
50 to 100
80 to 160
125 to 250
* Old Specification / New Specification
PACKAGE DIMENSIONS
(Units: mm)
1.5
2
1
3
Marking
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
2.80.2
2.90.2
1.1 to 1.4
0 to 0.1
0.95
0.3
0.95
0.4
+0.1
-
0.05
0.4
+0.1
-
0.05
0.16
+0.1
-
0.06
0.65
+0.1
-
0.15
2
2SC3356
TYPICAL CHARACTERISTICS (T
A
= 25

C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
100
0
10
20
50
100
200
50
1
5
10
50
0.5
100
150
T
A
-Ambient Temperature-
C
I
C
-Collector Current-mA
DC CURRENT GAIN vs.
COLLECTOR CURRENT
P
T
-Total Power Dissipation-mW
h
FE
-DC Current Gain
V
CE
= 10 V
0
5
10
15
0.5
1
5
10
50 70
I
C
-Collector Current-mA
INSERTION GAIN vs.
COLLECTOR CURRENT
|S
21e
|
2
-Insertion Gain-dB
V
CE
= 10 V
f = 1.0 GHz
0.3
0.5
1
2
0
0.5
1
2
5
10
20
30
V
CB
-Collector to Base Voltage-V
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
C
re
-Feed-back Capacitance-pF
f = 1.0 MHz
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
0
0.5 1.0
10
5.0
30
I
C
-Collector Current-mA
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
f
T
-Gain Bandwidth Product-MHz
V
CE
= 10 V
0
10
20
0.1
0.2
0.4
0.6 0.81.0
2
f-Frequency-GHz
INSERTION GAIN, MAXIMUM GAIN
vs. FREQUENCY
G
max
-Maximum Gain-dB
|S
21e
|
2
-Insertion Gain-dB
V
CE
= 10 V
I
C
= 20 mA
G
max
|S
21e
|
2
Free Air
3
2SC3356
0
2
1
5
4
3
7
6
0.5
1
5
10
50 70
I
C
-Collector Current-mA
NOISE FIGURE vs.
COLLECTOR CURRENT
NF-Noise Figure-dB
V
CE
= 10 V
f = 1.0 GHz
5
4
3
2
1
0
18
15
12
6
3
0
2
4
6
8
10
V
CE
-Collector to Emitter Voltage-V
NOISE FIGURE, FORWARD INSERTION
GAIN vs. COLLECTOR TO EMITTER VOLTAGE
NF-Noise Figure-dB
|S
21e
|
2
-Insertion Gain-dB
f = 1.0 GHz
I
C
= 20 mA
|S
21e
|
2
NF
S-PARAMETER
V
CE
= 10 V, I
C
= 5 mA, Z
O
= 50
f (MHz)
S
11
S
11
S
21
S
21
S
12
S
12
S
22
S
22
200
400
600
800
1000
1200
1400
1600
1800
2000
0.651
0.467
0.391
0.360
0.360
0.361
0.381
0.398
0.423
0.445
69.3
113.3
139.3
159.2
176.9
172.7
160.3
152.2
143.3
137.6
10.616
6.856
4.852
3.802
3.098
2.646
2.298
2.071
1.836
1.689
129.3
104.4
90.9
81.2
72.9
67.3
59.3
55.2
49.0
46.2
0.051
0.071
0.086
0.101
0.118
0.137
0.157
0.180
0.203
0.220
59.2
54.4
56.0
59.1
61.0
63.5
63.3
64.1
63.7
64.7
0.735
0.550
0.468
0.426
0.397
0.373
0.360
0.337
0.320
0.302
28.1
34.1
33.9
33.6
35.7
38.3
43.0
45.9
52.3
52.2
V
CE
= 10 V, I
C
= 5 mA, Z
O
= 50
f (MHz)
S
11
S
11
S
21
S
21
S
12
S
12
S
22
S
22
200
400
600
800
1000
1200
1400
1600
1800
2000
0.339
0.258
0.243
0.242
0.260
0.269
0.294
0.314
0.343
0.367
107.0
147.3
167.7
177.0
164.5
157.6
148.7
143.1
136.5
131.4
16.516
8.928
6.022
4.633
3.744
3.193
2.750
2.479
2.185
2.016
108.7
92.1
83.0
76.2
69.9
65.7
58.8
55.5
50.1
47.8
0.035
0.060
0.085
0.109
0.136
0.160
0.187
0.212
0.238
0.254
66.1
71.0
71.9
72.2
70.4
69.9
66.7
65.2
62.4
61.6
0.459
0.343
0.305
0.284
0.266
0.246
0.233
0.208
0.190
0.173
36.6
32.9
29.9
29.4
31.7
35.0
40.4
43.6
50.5
48.3
4
2SC3356
S-PARAMETER
A
N
G
L
E
O
F
R
E
F
L
E
C
T
I
O
N
C
O
E
F
F
C
I
E
N
T
I
N
D
E
G
R
E
E
S
20
30
40
50
00
60
70
80
90
100
110
120
130
140
150
-
160
-
150
-
140
-
130
-
120
-
110
-
100
-
90
-
80
-
70
-
60
-
50
-
40
-
30
-
20
-
10
0
10
0.28
0.22
0.30
0.20
0.32
0.18
0.34
0.16
0.36
0.14
0.38
0.12
0.40
0.10
0.42
0.08
0.44
0.06
0.46
0.04
0.21
0.19
0.17
0.15
0.13
0.11
0.09
0.07
0.05
0.03
0.29
0.31
0.33
0.35
0.37
0.39
0.41
0.43
0.45
0.47
0.02 0.48
0.01
0.49
0
0
0.49
0.01
0.48
0.02
0.47
0.03
0.46
0.04
0.45
0.05
0.44
0.06
0.43
0.07
0.42
0.08
0.41
0.09
0.40
0.10
0.39
0.11
0.38
0.12
0.37
0.13
0.36
0.14
0.35
0.15
0.34
0.16
0.33
0.17
0.32
0.18
0.31
0.19
0.30
0.20
0.29
0.21
0.28
0.22
0.27
0.23
0.26
0.24
0.25
0.25
0.24
0.26
0.23
0.27
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
L
O
A
D
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
G
E
N
E
R
A
T
O
R
2.0
50
10
6.0
4.0
3.0
1.8
1.6
1.4
1.2
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.0
(
+JX
Z
O
)
0.2
0.4
0.6
0.8
1.0
0.8
0.7
0.6
0.3
0.2
0.1
0.2
1.0
0.8
0.6
0.4
0.2
1.0
0.8
0.6
0.4
0.4
0.5
5.0
10
50
3.0
4.0
1.8
2.0
1.2
1.0
0.9
1.4
1.6
REACTANCE COMPONENT
(
R
Z
O
)
NE
GA
TIV
E
RE
A
CT
A
N
C
E C
OM
P
O
N
E
N
T
P
OS
IT
IV
E
R
E
A
C
TA
N
C
E
CO
M
PO
NE
NT
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
0
(
-
JX
Z
O
)
20
20
0.2
0.4
0.6
0.8
1.0
S
11e
, S
22e
-FREQUENCY
S
21e
-FREQUENCY
90
0
30
-
30
60
-
60
180
150
-
150
120
-
120
-
90
5
10
15
20
S
21e
0.2 GHz
2.0 GHz
90
0
30
-
30
60
-
60
180
150
-
150
120
-
120
-
90
0.05
0.1
0.15
0.2 0.25
S
12e
0.2 GHz
2.0 GHz
S
12e
-FREQUENCY
V
CE
= 10 V
200 MHz Step
CONDITION
V
CE
= 10 V
I
C
= 20 mA
CONDITION
V
CE
= 10 V
I
C
= 20 mA
CONDITION
0.2 GHz
0.2 GHz
0.2 GHz
2.0 GHz
I
C
= 20 mA
S
22e
S
11e
I
C
= 20 mA
I
C
= 5 mA
I
C
= 5 mA
5
2SC3356
[MEMO]