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Электронный компонент: 2SC3357

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SILICON TRANSISTOR
2SC3357
NPN SILICON EPITAXIAL TRANSISTOR
POWER MINI MOLD
DATA SHEET
Document No. P10357EJ4V1DS00 (4th edition)
Date Published March 1997 N
Printed in Japan
1985
DESCRIPTION
The 2SC3357 is an NPN silicon epitaxial transistor designed for
low noise amplifier at VHF, UHF and CATV band.
It has large dynamic range and good current characteristic.
FEATURES
Low Noise and High Gain
NF = 1.1 dB TYP., G
a
= 8.0 dB TYP. @V
CE
= 10 V,
I
C
= 7 mA, f = 1.0 GHz
NF = 1.8 dB TYP., G
a
= 9.0 dB TYP. @V
CE
= 10 V,
I
C
= 40 mA, f = 1.0 GHz
Large P
T
in Small Package
P
T
: 2 W with 16 cm
2
0.7 mm Ceramic Substrate.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Collector to Base Voltage V
CBO
20 V
Collector to Emitter Voltage V
CEO
12 V
Emitter to Base Voltage V
EBO
3.0 V
Collector Current I
C
100 mA
Total Power Dissipation P
T
* 1.2 W
Thermal Resistance R
th(j-a)
* 62.5
C/W
Junction Temperature T
j
150
C
Storage Temperature T
stg
-
65 to +150
C
* mounted on 16 cm
2
0.7 mm Ceramic Substrate
PACKAGE DIMENSIONS
(Unit: mm)
Term, Connection
E
C
B
(SOT-89)
: Emitter
: Collector (Fin)
: Base
0.41
-
0.03
+0.05
0.47
0.06
0.420.06
4.50.1
1.60.2
3.0
E
B
C
1.5
0.8 MIN.
2.50.1
4.00.25
1.50.1
0.42
0.06
2
2SC3357
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
I
CBO
1.0
A
V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current
I
EBO
1.0
A
V
EB
= 1.0 V, I
C
= 0
DC Current Gain
h
FE
*
50
120
300
V
CE
= 10 V, I
C
= 20 mA
Gain Bandwidth Product
f
T
6.5
GHz
V
CE
= 10 V, I
C
= 20 mA
Feed-Back Capacitance
C
re
**
0.65
1.0
pF
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
Insertion Power Gain
S
21
e
2
9
dB
V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
Noise Figure
NF
1.1
dB
V
CE
= 10 V, I
C
= 7 mA, f = 1.0 GHz
Noise Figure
NF
1.8
3.0
dB
V
CE
= 10 V, I
C
= 40 mA, f = 1.0 GHz
*
Pulse Measurement PW
350
s, Duty Cycle
2 %
** The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitnace bridge.
h
FE
Classification
Class
RH
RF
RE
Marking
RH
RF
RE
h
FE
50 to 100
80 to 160
125 to 250
TYPICAL CHARACTERISTICS (T
A
= 25
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2.0
1.0
0
50
100
150
T
A
-Ambient Temperature-
C
P
T
-Total Power Dissipation-W
0.3
0.5
1
2
0
0.5
1
2
5
10
20
30
V
CB
-Collector to Base Voltage-V
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
C
re
-Feed-back Capacitance-pF
f = 1.0 MHz
Free Air
R
th(j-a)
312.5 C/W
Ceramic Substrate
16 cm
2
0.7 mm
3
2SC3357
10
20
50
100
200
1
5
10
50
0.5
I
C
-Collector Current-mA
DC CURRENT GAIN vs.
COLLECTOR CURRENT
h
FE
-DC Current Gain
V
CE
= 10 V
0
5
10
15
0.5
1
5
10
50 70
I
C
-Collector Current-mA
INSERTION GAIN vs.
COLLECTOR CURRENT
|S
21e
|
2
-Insertion Gain-dB
V
CE
= 10 V
f = 1.0 GHz
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
0
0.5
10
10
5.0
30
I
C
-Collector Current-mA
GAIN BANDWIDTH PROUDCT vs.
COLLECTOR CURRENT
f
T
-Gain Bandwidth Product-MHz
V
CE
= 10 V
0
10
20
0.1
0.2
0.4
0.6 0.8 1.0
f-Frequency-GHz
INSERTION GAIN, MAXIMUM GAIN
vs. FREQUENCY
G
max
-Maximum Gain-dB
|S
21e
|
2
-Insertion Gain-dB
V
CE
= 10 V
I
C
= 20 mA
G
max
|S
21e
|
2
INTERMODULATION DISTORTION vs.
COLLECTOR CURRENT
IM
2
, IM
3
(dB)
IM
3
IM
2
-
30
-
40
-
50
-
60
-
70
-
80
20
30
I
C
-Collector Current-mA
40
60
50
70
V
CE
= 10 V
V
0
= 100 dB V/50
R
g
= R
e
= 50
at
IM
2
IM
3
f = 90 + 100 MHz
f = 2
200
-
190 MHz
0
2
5
4
3
7
6
0.5
1
5
10
50 70
I
C
-Collector Current-mA
NOISE FIGURE vs.
COLLECTOR CURRENT
NF-Noise Figure-dB
V
CE
= 10 V
f = 1.0 GHz
4
2SC3357
S-PARAMETER
V
CE
= 10 V, I
C
= 40 mA, Z
O
= 50
f (MHz)
S
11
S
11
S
21
S
21
S
12
S
12
S
22
S
22
200
400
600
800
1000
1200
1400
1600
1800
2000
0.196
0.103
0.056
0.024
0.008
0.039
0.072
0.102
0.129
0.151
-
94.4
-
118.3
-
131.1
-
43.7
-
2.0
13.1
11.8
9.6
8.6
9.8
13.023
6.852
4.632
3.527
2.854
2.421
2.118
1.887
1.681
1.579
102.4
89.2
78.3
75.9
68.7
65.7
59.0
57.1
52.5
51.4
0.043
0.081
0.118
0.152
0.188
0.218
0.255
0.278
0.308
0.339
74.5
77.4
77.5
78.0
78.4
75.7
71.7
73.1
71.3
71.8
0.444
0.398
0.399
0.414
0.440
0.461
0.479
0.499
0.515
0.537
-
21.1
-
25.3
-
26.9
-
28.9
-
33.5
-
33.3
-
36.3
-
35.5
-
38.8
-
35.9
V
CE
= 10 V, I
C
= 20 mA, Z
O
= 50
f (MHz)
S
11
S
11
S
21
S
21
S
12
S
12
S
22
S
22
200
400
600
800
1000
1200
1400
1600
1800
2000
0.130
0.073
0.037
0.010
0.024
0.056
0.093
0.124
0.151
0.174
-
109.2
-
134.1
-
146.6
177.1
23.7
17.2
13.8
12.0
11.0
13.4
13.430
6.930
4.690
3.560
2.878
2.439
2.133
1.898
1.693
1.591
98.1
87.2
79.4
75.2
68.2
65.4
59.0
57.3
52.9
52.0
0.042
0.081
0.119
0.154
0.191
0.220
0.257
0.280
0.311
0.341
79.0
80.6
79.4
79.7
76.5
76.8
72.9
74.0
72.4
72.8
0.403
0.382
0.392
0.412
0.440
0.463
0.483
0.504
0.519
0.542
-
22.1
-
24.7
-
25.6
-
27.1
-
31.9
-
32.3
-
35.7
-
35.3
-
38.4
-
36.3
5
2SC3357
A
N
G
L
E
O
F
R
E
F
L
E
C
T
I
O
N
C
O
E
F
F
C
I
E
N
T
I
N
D
E
G
R
E
E
S
20
30
40
50
00
60
70
80
90
100
110
120
130
140
150
-
160
-
150
-
140
-
130
-
120
-
110
-
100
-
90
-
80
-
70
-
60
-
50
-
40
-
30
-
20
-
10
0
10
0.28
0.22
0.30
0.20
0.32
0.18
0.34
0.16
0.36
0.14
0.38
0.12
0.40
0.10
0.42
0.08
0.44
0.06
0.46
0.04
0.21
0.19
0.17
0.15
0.13
0.11
0.09
0.07
0.05
0.03
0.29
0.31
0.33
0.35
0.37
0.39
0.41
0.43
0.45
0.47
0.02 0.48
0.01
0.49
0
0
0.49
0.01
0.48
0.02
0.47
0.03
0.46
0.04
0.45
0.05
0.44
0.06
0.43
0.07
0.42
0.08
0.41
0.09
0.40
0.10
0.39
0.11
0.38
0.12
0.37
0.13
0.36
0.14
0.35
0.15
0.34
0.16
0.33
0.17
0.32
0.18
0.31
0.19
0.30
0.20
0.29
0.21
0.28
0.22
0.27
0.23
0.26
0.24
0.25
0.25
0.24
0.26
0.23
0.27
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
L
O
A
D
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
G
E
N
E
R
A
T
O
R
2.0
50
10
6.0
4.0
3.0
1.8
1.6
1.4
1.2
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.0
(
+JX
Z
O
)
0.2
0.4
0.6
0.8
1.0
0.8
0.7
0.6
0.3
0.2
0.1
0.2
1.0
0.8
0.6
0.4
0.2
1.0
0.8
0.6
0.4
0.4
0.5
5.0
10
50
3.0
4.0
1.8
2.0
1.2
1.0
0.9
1.4
1.6
REACTANCE COMPONENT
(
R
Z
O
)
NE
GA
TIV
E
RE
A
CT
A
N
C
E C
OM
P
O
N
E
N
T
P
OS
IT
IV
E
R
E
A
C
TA
N
C
E
CO
M
PO
NE
NT
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
0
(
-
JX
Z
O
)
20
20
0.2
0.4
0.6
0.8
1.0
S
11e
, S
22e
-FREQUENCY
S
21e
-FREQUENCY
90
0
30
-
30
60
-
60
180
150
-
150
120
-
120
-
90
3
6
9
12
15
S
21e
f = 0.2 GHz
f = 2.0 GHz
90
0
30
-
30
60
-
60
180
150
-
150
120
-
120
-
90
0.1
0.2
0.3
0.4 0.5
S
12e
f = 0.2 GHz
f = 2.0 GHz
S
12e
-FREQUENCY
V
CE
= 10 V
CONDITION
V
CE
= 10 V
I
C
= 20 mA
CONDITION
V
CE
= 10 V
I
C
= 20 mA
CONDITION
f = 0.2 GHz
f = 0.2 GHz
f = 2.0 GHz
f = 20 GHz
I
C
= 20 mA
S
11
I
C
= 20 mA