DATA SHEET
SILICON TRANSISTOR
2SC3545
UHF OSCILLATOR AND MIXER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
DATA SHEET
Document No. P10358EJ2V1DS00 (2nd edition)
Date Published March 1997 N
Printed in Japan
1984
DESCRIPTION
The 2SC3545 is an NPN silicon epitaxial transistor intended for use as
UHF oscillator and mixer in a tuner of a TV receiver.
The device features stable oscillation and small frequency drift against
any change of the supply voltage and the ambient temperature.
It is designed for use in small type equipments especially
recommended for Hybrid Integrated Circuit and other applications.
FEATURES
High Gain Bandwidth Procuct; f
T
= 2 000 MHz TYP.
Low Collector to Base Time Constant; C
C
r
b'b
= 4 ps TYP.
Low Feedback Capacitance; C
re
= 0.48 pF TYP.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Maximum Voltages and Current
Collector to Base Voltage
V
CBO
30
V
Collector to Emitter Voltage
V
CEO
15
V
Emitter to Base Voltage
V
EBO
3.0
V
Collector Current
I
C
50
mA
Maximum Power Dissipation
Total Power Dissipation
P
T
150
mW
Maximum Temperature
Junction Temperature
T
j
125
C
Storage Temperature
T
stg
65 to +125
C
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
I
CBO
0.1
A
V
CB
= 12 V, I
E
= 0
DC Current Gain
h
FE
50
100
250
V
CE
= 10 V, I
C
= 5.0 mA
Collector Saturation Voltage
V
CE(sat)
0.5
V
I
C
= 10 mA, I
B
= 1.0 mA
Gain Bandwidth Product
f
T
1.3
2.0
MHz
V
CE
= 10 V, I
E
=
5.0 mA
Output Capacitance
C
ob
0.48
1.0
pF
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
Collector to Base Time Constant
C
C
r
b'b
4
10
ps
V
CE
= 10 V, I
E
=
5.0 mA, f = 31.9 MHz
h
FE
Classification
Class
M/P *
L/Q *
K/R *
Marking
T42
T43
T44
h
FE
50 to 100
70 to 140
120 to 250
* Old Specification / New Specification
PACKAGE DIMENSIONS
(Units: mm)
1.5
2
1
3
Marking
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
2.80.2
2.90.2
1.1 to 1.4
0 to 0.1
0.95
0.3
0.95
0.4
+0.1
-
0.05
0.4
+0.1
-
0.05
0.16
+0.1
-
0.06
0.65
+0.1
-
0.15
2
2SC3545
TYPICAL CHARACTERISTICS (T
A
= 25
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
300
100
50
150
200
250
0
10
20
50
100
200
50
25
1
5
10
50
0.5
75
125
100
T
A
-Ambient Temperature-
C
I
C
-Collector Current-mA
DC CURRENT GAIN vs.
COLLECTOR CURRENT
P
T
-Total Power Dissipation-W
h
FE
-DC Current Gain
V
CE
= 10 V
0
5
10
15
0.5
1
5
10
50 70
I
C
-Collector Current-mA
INSERTION GAIN, MAXIMUM AVAILABLE
GAIN vs. COLLECTOR CURRENT
G
max
-Maximum Available Gain-dB
|S
21e
|
2
-Insertion Gain-dB
V
CE
= 10 V
f = 1.0 GHz
0.1
0.5
0.3
0.2
0.7
1
3
2
1
2
3
7
5
10
20
30
V
CB
-Collector to Base Voltage-V
TYPICAL DEVICE CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
C
re
-Feed-back Capacitance-pF
f = 1.0 MHz
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
0.1
0.5 1.0
10
5.0
30
I
C
-Collector Current-mA
GAIN BANDWIDTH PROUDCT vs.
COLLECTOR CURRENT
f
T
-Gain Bandwidth Product-MHz
V
CE
= 10 V
0
5
10
15
0.5
1
5
10
50 70
I
C
-Collector Current-mA
COLLECTOR TO BASE TIME CONSTANT
vs. COLLECTOR CURRENT
C
C
. r
b'b
-Collector to Base Time Constant-ps
V
CE
= 10 V
f = 31.9 MHz
Free air
MAG
|S
21e
|
2
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