DATA SHEET
SILICON TRANSISTOR
2SC3583
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DATA SHEET
Document No. P10360EJ4V1DS00 (4th edition)
Date Published March 1997 N
Printed in Japan
1984
DESCRIPTION
The 2SC3583 is an NPN epitaxial silicon transistor designed for use in
low-noise and small signal amplifiers from VHF band to UHF band. Low-
noise figure, high gain, and high current capability achieve a very wide
dynamic range and excellent linearity. This is achieved by direct nitride
passivated base surface process (DNP process) which is an NEC
proprietary new fabrication technique.
FEATURES
NF
1.2 dB TYP.
@f = 1.0 GHz
Ga
13 dB TYP.
@f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Collector to Base Voltage
V
CBO
20
V
Collector to Emitter Voltage
V
CEO
10
V
Emitter to Base Voltage
V
EBO
1.5
V
Collector Current
I
C
65
mA
Total Power Dissipation
P
T
200
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
65 to +150
C
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
I
CBO
1.0
A
V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current
I
EBO
1.0
A
V
EB
= 1 V, I
E
= 0
DC Current Gain
h
FE
*
50
100
250
V
CE
= 8 V, I
C
= 20 mA
Gain Bandwidth Product
f
T
9
GHz
V
CE
= 8 V, I
C
= 20 mA
Feed-Back Capacitance
C
re
**
0.35
0.9
pF
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
Insertion Power Gain
S
21e
2
11
13
dB
V
CE
= 8 V, I
C
= 20 mA, f = 1.0 GHz
Maximum Available Gain
MAG
15
dB
V
CE
= 8 V, I
C
= 20 mA, f = 1.0 GHz
Noise Figure
NF
1.2
2.5
dB
V
CE
= 8 V, I
E
= 7 mA, f = 1.0 GHz
*
Pulse Measurement PW
350
s, Duty Cycle
2 %
** The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge.
h
FE
Classification
Class
R33/Q *
R34/R *
R35/S *
Marking
R33
R34
R35
h
FE
50 to 100
80 to 160
125 to 250
* Old Specification / New Specification
PACKAGE DIMENSIONS
(Units: mm)
1.5
2
1
3
Marking
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
2.80.2
2.90.2
1.1 to 1.4
0 to 0.1
0.95
0.3
0.95
0.4
+0.1
-
0.05
0.4
+0.1
-
0.05
0.16
+0.1
-
0.06
0.65
+0.1
-
0.15
2
2SC3583
TYPICAL CHARACTERISTICS (T
A
= 25
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
100
0
10
20
50
100
200
50
1
5
10
50
0.5
100
150
T
A
-Ambient Temperature-
C
I
C
-Collector Current-mA
DC CURRENT GAIN vs.
COLLECTOR CURRENT
P
T
-Total Power Dissipation-W
h
FE
-DC Current Gain
V
CE
= 8 V
0
5
10
15
0.5
1
5
10
50 70
I
C
-Collector Current-mA
INSERTION GAIN vs.
COLLECTOR CURRENT
|S
21e
|
2
-Insertion Gain-dB
V
CE
= 8 V
f = 1.0 GHz
0.1
0.5
0.3
0.2
0.7
1
3
2
1
3
2
5
7
10
20
30
V
CB
-Collector to Base Voltage-V
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
C
re
-Feed-back Capacitance-pF
f = 1.0 MHz
0
12
8
4
16
20
0.1
0.3
0.2
0.5 0.7.
1.0
2.0
3.0
f-Frequency-GHz
INSERTION GAIN, MAXIMUM AVAILABLE
GAIN vs. FREQUENCY
MAG-Maximum Available Gain-dB
|S
21e
|
2
-Insertion Gain -dB
V
CE
= 8 V
I
C
= 20 mA
1
5
3
2
7
10
30
20
1
3
2
5
7
10
20
30
I
C
-Collector Current-mA
GAIN BANDWIDTH PRODUUT vs.
COLLECTOR CURRENT
f
T
-Gain Bandwidth Product-MHz
V
CE
= 8 V
Free air
|S
21e
|
2
MAG
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