1996
DATA SHEET
Document No. P11673EJ1V0DS00 (1st edition)
Date Published August 1996 P
Printed in Japan
SILICON TRANSISTOR
2SC3587
The 2SC3587 is an NPN epitaxial transistor designed for low-
noise amplification at 0.5 to 6.0 GHz. This transistor has low-noise
and high-gain characteristics in a wide collector current region, and
has a wide dynamic range.
FEATURES
Low noise
: NF = 1.7 dB TYP.
@ f = 2 GHz
NF = 2.6 dB TYP.
@ f = 4 GHz
High power gain : G
A
= 12.5 dB TYP. @ f = 2 GHz
G
A
= 8.0 dB TYP.
@ f = 4 GHz
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
NPN EPITAXIAL SILICON TRANSISTOR
FOR MICROWAVE LOW-NOISE AMPLIFICATION
PACKAGE DIMENSIONS (in mm)
3.8 MIN.
E
C
B
E
45
0.5
0.05
0.5
0.05
0.1
+0.06
-0.03
2.55
0.2
2.1
3.8 MIN.
3.8 MIN.
3.8 MIN.
1.8 MAX.
0.55
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
V
CBO
20
V
Collector to Emitter Voltage
V
CEO
10
V
Emitter to Base Voltage
V
EBO
1.5
V
Collector Current
I
C
35
mA
Total Power Dissipation
P
T (T
C
= 25
C)
580
mW
Junction Temperature
T
j
200
C
Storage Temperature
T
stg
-65 to +150
C
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
= 10 V
1.0
A
Emitter Cut-off Current
I
EBO
V
EB
= 1 V
1.0
A
DC Current Gain
h
FE
V
CE
= 6 V, I
C
= 10 mA Pulse
50
100
250
Gain Bandwidth Product
f
T
V
CE
= 6 V, I
C
= 10 mA
10.0
GHz
Reverse Transfer Capacitance
C
re
V
CB
= 10 V, f = 1 MHz
0.2
0.7
pF
Noise Figure
NF
Note
V
CE
= 6 V, I
C
= 5 mA
f = 2 GHz
1.7
2.4
dB
f = 4 GHz
2.6
dB
Insertion Gain
|S
21e
|
2
V
CE
= 6 V, I
C
= 10 mA
f = 2 GHz
10.5
12.5
dB
f = 4 GHz
7.5
dB
Maximum Available Gain
MAG
V
CE
= 6 V, I
C
= 10 mA, f = 4 GHz
10
dB
Power Gain
G
A
V
CE
= 6 V, I
C
= 5 mA
f = 2 GHz
12.5
dB
f = 4 GHz
8.0
dB
2
2SC3587
Note
Test block diagram
Noise Diode
Coax. SW
Coax. SW
Post Amp
Mixer
*
NF Meter
Network
Analyzer
Coax. SW
Stub
Tuner
Bias
Tee
Bias
Tee
Transistor
Under
Test
Sweeper
To test 1 GHz or lower, insert a bandpass filter.
*
TYPICAL CHARACTERISTICS (T
A
= 25
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
MAG AND INSERTION GAIN vs.
FREQUENCY
REVERSE TRANSFER CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
0.8
0.6
0.4
0.2
0
3
200
100
50
20
10
2
1
0.7
0.5
0.3
0.2
0.1
1
2
3
5
V
CB
- Collector to Base Voltage -V
7
10
20
30
50
100
f = 1.0 MHz
T
A
- Ambient Temperature -
C
150
0.1
-
5
0
5
10
15
20
25
0.2
0.5
1
0.5
1
5
I
C
- Collector Current - mA
10
50
f - Frequency - GHz
|S
21e
|
2
- Insertion Gain - dB
MAG - Maximum Available Gain - dB
2
5
10
200
P
T
- Total Power Dissipation - W
C
re
- Reverse Transfer Capacitance - pF
h
FE
- DC Current Gain
with heat sink
R
th(j
-
e)
90
C/W
V
CE
= 6 V
I
C
= 10 mA
V
CE
= 6 V
MAG
R
th(j
-
a)
590
C/W
|S
21e
|
2
3
2SC3587
S PARAMETER
V
CE
= 6 V, I
C
= 10 mA, Z
O
= 50
f (MHz)
|S
11
|
S
11
|S
21
|
S
21
|S
12
|
S
12
|S
22
|
S
22
500
.466
-82.1
13.209
120.8
.0288
50.9
.634
-25.0
1000
.322
-123.8
8.371
95.7
.0424
54.2
.610
-29.4
1500
.271
-153.7
5.672
78.7
.0561
54.5
.579
-33.5
2000
.256
-176.6
4.304
66.9
.0697
54.1
.549
-38.7
2500
.262
167.3
3.456
58.6
.0848
51.9
.531
-46.2
3000
.270
152.0
3.095
46.1
.0955
48.0
.507
-52.8
3500
.294
142.0
2.595
35.0
.106
43.2
.498
-61.0
4000
.327
129.7
2.231
27.6
.127
35.2
.500
-68.4
INSERTION GAIN vs.
COLLECTOR CURRENT
NOISE FIGURE vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
15
6
5
4
3
2
1
2
5
10
20
50
10
5
30
20
10
7
5
3
2
0
0.5
1
1
2
3
5
7
10
20
30
5
IC - Collector Current - mA
IC - Collector Current - mA
IC - Collector Current - mA
10
50 70
|S
21e
|
2
- Insertion Gain - dB
NF - Noise Figure -dB
f
T
- Gain Bandwidth Product - GHz
V
CE
= 6 V
V
CE
= 6 V
V
CE
= 6 V
f = 2 GHz
3 GHz
4 GHz
f = 4 GHz
f = 2 GHz
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