1996
DATA SHEET
Document No. P11675EJ2V0DS00 (2nd edition)
Date Published August 1996 P
Printed in Japan
SILICON TRANSISTOR
2SC3604
The 2SC3604 is an NPN epitaxial transistor designed for low-
noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise
and high-gain characteristics in a wide collector current region, and
has a wide dynamic range.
FEATURES
Low noise
: NF = 1.6 dB TYP. @ f = 2.0 GHz
High power gain : G
A
= 12 dB TYP. @ f = 2.0 GHz
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
V
CBO
20
V
Collector to Emitter Voltage
V
CEO
10
V
Emitter to Base Voltage
V
EBO
1.5
V
Collector Current
I
C
65
mA
Total Power Dissipation
P
T (T
C
= 25
C)
580
mW
Junction Temperature
T
j
200
C
Storage Temperature
T
stg
-65 to +150
C
NPN EPITAXIAL SILICON TRANSISTOR
FOR MICROWAVE LOW-NOISE AMPLIFICATION
PACKAGE DIMENSIONS (in mm)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
= 10 V, I
E
= 0
1.0
A
Emitter Cut-off Current
I
EBO
V
EB
= 1 V, I
C
= 0
1.0
A
DC Current Gain
h
FE
V
CE
= 8 V, I
C
= 20 mA Pulse
50
100
250
Gain Bandwidth Product
f
T
V
CE
= 8 V, I
C
= 20 mA
8
GHz
Reverse Transfer Capacitance
C
re
V
CB
= 10 V, I
E
= 0, f = 1 MHz
0.2
0.7
pF
Noise Figure
NF
Note
V
CE
= 8 V, I
C
= 7 mA, f = 2.0 GHz
1.6
2.3
dB
Insertion Gain
|S
21e
|
2
V
CE
= 8 V, I
C
= 20 mA, f = 2.0 GHz
9.0
11
dB
Maximum Available Gain
MAG
V
CE
= 8 V, I
C
= 20 mA, f = 2.0 GHz
13
dB
Power Gain
G
A
V
CE
= 8 V, I
C
= 7 mA, f = 2.0 GHz
12
dB
3.8 MIN.
E
C
B
E
45
0.5
0.05
0.5
0.05
0.1
+0.06
-0.03
2.55
0.2
2.1
3.8 MIN.
3.8 MIN.
3.8 MIN.
1.8 MAX.
0.55
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
2
2 S C 3 6 0 4
Note
Test block diagram
Noise Diode
Coax. SW
Coax. SW
Post Amp
Mixer
*
NF Meter
Network
Analyzer
Coax. SW
Stub
Tuner
Bias
Tee
Bias
Tee
Transistor
Under
Test
Sweeper
To test 1 GHz or lower, insert a bandpass filter.
*
TYPICAL CHARACTERISTICS (T
A
= 25
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
MAG AND INSERTION GAIN vs.
FREQUENCY
REVERSE TRANSFER CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
0.8
0.6
0.4
0.2
0
3
200
100
50
20
10
2
1
0.7
0.5
0.3
0.2
0.1
1
2
3
5
V
CB
- Collector to Base Voltage -V
7
10
20
30
50
100
f = 1.0 MHz
T
A
- Ambient Temperature -
C
150
0.1
-
5
0
5
10
15
20
25
0.2
0.5
1
0.5
1
5
I
C
- Collector Current - mA
10
50
f - Frequency - GHz
|S
21e
|
2
- Insertion Gain - dB
MAG - Maximum Available Gain - dB
2
5
10
200
P
T
- Total Power Dissipation - W
C
re
- Reverse Transfer Capacitance - pF
h
FE
- DC Current Gain
with heat sink
R
th(j
-
e)
90
C/W
V
CE
= 8 V
I
C
= 20 mA
V
CE
= 8 V
MAG
R
th(j
-
a)
590
C/W
|S
21e
|
2
3
2 S C 3 6 0 4
S PARAMETER
V
CE
= 6 V, I
C
= 10 mA, Z
O
= 50
f (MHz)
|S
11
|
S
11
|S
21
|
S
21
|S
12
|
S
12
|S
22
|
S
22
500
.463
-125.3
13.822
106.8
.027
37.9
.516
-36.6
1000
.432
-162.7
7.901
86.2
.0424
48.2
.463
-40.7
1500
.416
178.7
5.250
71.1
.0606
53.1
.421
-46.2
2000
.439
165.0
3.949
59.7
.0758
52.0
.396
-50.9
2500
.451
153.6
3.151
51.7
.097
49.3
.372
-56.5
3000
.470
143.6
2.809
39.6
.111
45.1
.345
-63.7
3500
.482
135.2
2.337
28.6
.124
39.5
.320
-73.2
4000
.494
129.1
2.022
21.3
.132
35.5
.321
-82.0
INSERTION GAIN vs.
COLLECTOR CURRENT
NOISE FIGURE vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
15
6
5
4
3
2
1
2
5
10
20
50
10
5
30
20
10
7
5
3
2
0
0.5
1
1
2
3
5
7
10
20
30
5
IC - Collector Current - mA
IC - Collector Current - mA
IC - Collector Current - mA
10
50 70
|S
21e
|
2
- Insertion Gain - dB
NF - Noise Figure -dB
f
T
- Gain Bandwidth Product - GHz
V
CE
= 8 V
f = 2 GHz
V
CE
= 8 V
V
CE
= 8 V
f = 2 GHz
3 GHz
4 GHz
4
2 S C 3 6 0 4
S PARAMETER
90
100
110
120
130
140
150
-
160
-150
-140
-130
-120
-110
-100
-90
-80
-70
-60
-50
-40
-30
-
20
-
10
0
0.25
0.25
0.24
0.26
0.23
0.27
0.22
0.28
0.21
0.29
0.20
0.30
0.19
0.31
0.18
0.32
0.17
0.33
0.16
0.34
0.15
0.35
0.14
0.36
0.13
0.37
0.12
0.35
0.11
0.39
0.10
0.40
0.09
0.41
0.08
0.42
0.07
0.43
0.06
0.44
0.05
0.45
0.04
0.46
0.03
0.47
0.02
0.48
0.01
0.49
0
0
0.49
0.01
0.48
0.02
0.47
0.03
0.46
0.04
0.45
0.05
0.44
0.06
0.43
0.07
0.42
0.08
0.41
0.09
0.40
0.10
0.39
0.11
0.38
0.12
0.37
0.13
0.36
0.14
0.35
0.15
0.34
0.16
0.33
0.17
0.32
0.18
0.31
0.19
0.30
0.20
0.29
0.21
0.28
0.22
0.27
0.23
0.26
0.24
10
20
30
40
50
60
70
80
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
50
50
20
10
5.0
4.0
3.0
2.0
1.8
1.4
1.2
0.2
0.4
0.6
0.8
1.0
1.0
0.8
0.6
0.4
0.2
0.2
0.4
0.6
0.8
1.0
1.0
0.8
0.6
0.4
0.2
RESTSTANCE COMPONENT
R
Z
O
A
N
G
L
E
O
F
R
E
F
L
E
C
T
I
O
N
C
O
E
F
F
I
C
I
E
N
T
I
N
D
E
G
R
E
E
S
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
L
O
A
D
W
A
V
E
L
E
N
G
T
H
S
T
O
W
R
R
D
G
E
N
E
L
A
T
O
R
M
EG
A
TI
V
E
R
E
A
C
T
A
N
C
E
C
O
M
P
O
N
E
N
T
0.2
0.3
0.4
0.5
M
E
G
A
T
IV
E
R
E
A
C
T
A
N
C
E
C
O
M
PO
N
EN
T
+JXZ
O
-JX
Z
O
4 GHz
4 GHz
0.5 GHz
0.5 GHz
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.6
1.8
2.0
3.0
4.0
5.0
10
20
50
1.4
S
11e
S
22e
S
11e
, S
22e
-
FREQUENCY
V
CE
= 8 V
I
C
= 20 mA
500 MHz Step
S
21e
-
FREQUENCY
0.5 GHz
90
120
150
60
30
0
10
4 GHz
0.5 GHz
180
-
150
-
120
-
90
-
60
-
30
V
CC
= 8 V
I
C
= 20 mA
500 MHz Step
S
12e
-
FREQUENCY
90
120
150
60
30
0
4 GHz
180
-
150
-
120
-
90
-
60
-
30
V
CE
= 8 V
I
C
= 20 mA
500 MHz Step
5
0.1
0.05
5
2 S C 3 6 0 4
MARKING
Because the package of the micro X package transistor is too small to be marked, the following indication is
employed.
Part Number
Part Number
Marking
Part Number
Marking
2SC2148
A
2SC3603
0
2SC2149
B
2SC3604
2
2SC2150
C
2SC3587
1
2SC2367
H
2SC2585
K
2SC1223
D
Lot
Lot indication is colored as shown below.
The sequence black, brown, red, blue, and green, forms one cycle and this cycle is repeated.
1988
1989
1990
1991
1992
1993
1994
1995
1996
1
j Black
v
h
t
f
r
d
p
b
2
k
w
i
u
g
s
e
q
c
3
l
x
j
v
h
t
f
r
d
4
m
y
k
w
i
u
g
s
e
5
n
z
l
x
j
v
h
t
f
6
o
a Brown
m
y
k
w
i
u
g
7
p
b
n
z
l
x
j
v
h
8
q
c
o
a Red
m
y
k
w
i
9
r
d
p
b
n
z
l
x
j
10
s
e
q
c
o
a Blue
m
y
k
11
t
f
r
d
p
b
n
z
l
12
u
g
s
e
q
c
o
a Green
m
Month
Year
E
E
C
B
Lot
Aa
Part number
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