DATA SHEET
SILICON TRANSISTOR
2SC3663
NPN EPITAXIAL SILICON TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
1997
Document No. P10406EJ1V0DS00 (1st edition)
Date Published August 1997 N
Printed in Japan
DATA SHEET
FEATURES
Low-voltage, low-current, low-noise and high-gain
NF = 3.0 dB TYP.
@V
CE
= 1 V, I
C
= 250
P
A, f = 1.0 GHz
G
A
= 3.5 dB TYP.
@V
CE
= 1 V, I
C
= 250
P
A, f = 1.0 GHz
Ideal for battery drive of pagers, compact radio equipment,
cordless phones, etc.
Gold electrode gives high reliability.
Mini mold package, ideal for hybrid ICs.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
q
q
q
q
C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
V
CBO
15
V
Collector to Emitter Voltage
V
CEO
8
V
Emitter to Base Voltage
V
EBO
2
V
Collector Current
I
C
5
mA
Total Power Dissipation
P
T
50
mW
Junction Temperature
T
j
150
q
C
Storage Temperature
T
stg
65 to +150
q
C
ELECTRICAL CHARACTERISTICS (T
A
= 25
q
q
q
q
C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
= 5 V, I
E
= 0
0.1
P
A
Emitter Cut-off Current
I
EBO
V
EB
= 1 V, I
C
= 0
0.1
P
A
DC Current Gain
h
FE
V
CE
= 1 V, I
C
= 250
P
A, pulse
50
100
250
Gain Bandwidth Product
f
T
V
CE
= 1 V, I
C
= 1 mA
4
GHz
Insertion Power Gain
S
21e
2
V
CE
= 1 V, I
C
= 1 mA, f = 1 GHz
4.0
6.5
dB
Maximum Available Gain
MAG
V
CE
= 1 V, I
C
= 1 mA, f = 1 GHz
12.5
dB
Noise Figure
NF
V
CE
= 1 V, I
C
= 250
P
A, f = 1.0 GHz
3.0
4.5
dB
Associated Power Gain
G
A
V
CE
= 1 V, I
C
= 250
P
A, f = 1.0 GHz
3.5
dB
Collector Capacitance
C
ob
Note
V
CB
= 1 V, I
E
= 0, f = 1.0 MHz
0.4
0.6
pF
Note Measured using 3-pin bridge, with emitter pin connected to the bridge guard pin.
PACKAGE DIMENSIONS (in mm)
2.8 0.2
2.9 0.2
0 to 0.1
0.95
0.3
1.1 to 1.4
0.95
0.4
1.5
C
Marking
E
B
0.65
+0.1
0.15
+0.1
0.05
0.16
+0.1
0.06
0.4
+0.1
0.05
PIN CONNECTIONS
E: Emitter
B: Base
C: Collector
Marking: R62
3
2SC3663
TYPICAL CHARACTERISTICS (T
A
= 25
q
q
q
q
C)
10
5
0
0.1
1
10
|S
21e
|
2
- Insertion Power Gain - dB
INSERTION POWER GAIN vs. FREQUENCY
f - Frequency - GHz
I
C
- Collector Current - mA
I
C
- Collector Current - mA
f - Frequency - GHz
G
A
NF
I
C
- Collector Current - mA
V
CE
= 1 V
I
C
= 1 mA
10
8
6
4
2
1
0.1
1
10
f
T
- Gain Bandwidth Product - GHz
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
V
CE
= 1 V
10
5
0
20
10
0
0.1
1
10
|S
21e
|
2
- Insertion Power Gain - dB
INSERTION POWER GAIN vs. COLLECTOR
CURRENT
V
CE
= 1 V
f = 1.0 GHz
40
20
0
0.1
1
10
MAG - Maximum Available Gain - dB
MAG - Maximum Available Gain - dB
MAXIMUM AVAILABLE GAIN vs. FREQUENCY
10
5
0
0.1
1
10
G
A
- Associated Power Gain - dB
NF - Noise Figure - dB
NOISE FIGURE AND POWER GAIN AT OPUTIMUM NF
vs. COLLECTOR CURRENT
V
CE
= 1 V
f = 1.0 GHz
V
CE
= 1 V
I
C
= 1 mA