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Электронный компонент: 2SC3663

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DATA SHEET
SILICON TRANSISTOR
2SC3663
NPN EPITAXIAL SILICON TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
1997
Document No. P10406EJ1V0DS00 (1st edition)
Date Published August 1997 N
Printed in Japan
DATA SHEET
FEATURES
Low-voltage, low-current, low-noise and high-gain
NF = 3.0 dB TYP.
@V
CE
= 1 V, I
C
= 250
P
A, f = 1.0 GHz
G
A
= 3.5 dB TYP.
@V
CE
= 1 V, I
C
= 250
P
A, f = 1.0 GHz
Ideal for battery drive of pagers, compact radio equipment,
cordless phones, etc.
Gold electrode gives high reliability.
Mini mold package, ideal for hybrid ICs.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
q
q
q
q
C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
V
CBO
15
V
Collector to Emitter Voltage
V
CEO
8
V
Emitter to Base Voltage
V
EBO
2
V
Collector Current
I
C
5
mA
Total Power Dissipation
P
T
50
mW
Junction Temperature
T
j
150
q
C
Storage Temperature
T
stg
65 to +150
q
C
ELECTRICAL CHARACTERISTICS (T
A
= 25
q
q
q
q
C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
= 5 V, I
E
= 0
0.1
P
A
Emitter Cut-off Current
I
EBO
V
EB
= 1 V, I
C
= 0
0.1
P
A
DC Current Gain
h
FE
V
CE
= 1 V, I
C
= 250
P
A, pulse
50
100
250
Gain Bandwidth Product
f
T
V
CE
= 1 V, I
C
= 1 mA
4
GHz
Insertion Power Gain
S
21e
2
V
CE
= 1 V, I
C
= 1 mA, f = 1 GHz
4.0
6.5
dB
Maximum Available Gain
MAG
V
CE
= 1 V, I
C
= 1 mA, f = 1 GHz
12.5
dB
Noise Figure
NF
V
CE
= 1 V, I
C
= 250
P
A, f = 1.0 GHz
3.0
4.5
dB
Associated Power Gain
G
A
V
CE
= 1 V, I
C
= 250
P
A, f = 1.0 GHz
3.5
dB
Collector Capacitance
C
ob
Note
V
CB
= 1 V, I
E
= 0, f = 1.0 MHz
0.4
0.6
pF
Note Measured using 3-pin bridge, with emitter pin connected to the bridge guard pin.
PACKAGE DIMENSIONS (in mm)
2.8 0.2
2.9 0.2
0 to 0.1
0.95
0.3
1.1 to 1.4
0.95
0.4
1.5
C
Marking
E
B
0.65
+0.1
0.15
+0.1
0.05
0.16
+0.1
0.06
0.4
+0.1
0.05
PIN CONNECTIONS
E: Emitter
B: Base
C: Collector
Marking: R62
2
2SC3663
h
FE
CLASSIFICATION
RANK
K/P
Note
Marking
R62
h
FE
50 to 250
Note Existing rank classification/newly added rank
3
2SC3663
TYPICAL CHARACTERISTICS (T
A
= 25
q
q
q
q
C)
10
5
0
0.1
1
10
|S
21e
|
2
- Insertion Power Gain - dB
INSERTION POWER GAIN vs. FREQUENCY
f - Frequency - GHz
I
C
- Collector Current - mA
I
C
- Collector Current - mA
f - Frequency - GHz
G
A
NF
I
C
- Collector Current - mA
V
CE
= 1 V
I
C
= 1 mA
10
8
6
4
2
1
0.1
1
10
f
T
- Gain Bandwidth Product - GHz
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
V
CE
= 1 V
10
5
0
20
10
0
0.1
1
10
|S
21e
|
2
- Insertion Power Gain - dB
INSERTION POWER GAIN vs. COLLECTOR
CURRENT
V
CE
= 1 V
f = 1.0 GHz
40
20
0
0.1
1
10
MAG - Maximum Available Gain - dB
MAG - Maximum Available Gain - dB
MAXIMUM AVAILABLE GAIN vs. FREQUENCY
10
5
0
0.1
1
10
G
A
- Associated Power Gain - dB
NF - Noise Figure - dB
NOISE FIGURE AND POWER GAIN AT OPUTIMUM NF
vs. COLLECTOR CURRENT
V
CE
= 1 V
f = 1.0 GHz
V
CE
= 1 V
I
C
= 1 mA
4
2SC3663
A
N
G
L
E
O
F
R
E
F
L
E
C
T
I
O
N
C
O
E
F
F
C
I
E
N
T
I
N
D
E
G
R
E
E
S
160
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
10
20
30
40
50
00
60
70
80
90
100
110
120
130
140
150
0
0.02
0.48
0.04
0.46
0.06
0.44
0.08
0.42
0.10
0.40
0.12
0.38
0.04
0.36
0.16
0.34
0.18
0.32
0.20
0.30
0.22
0.28
0.24
0.26
0.26
0.24
0.28
0.22
0.30
0.20
0.32
0.18
0.34
0.16
0.36
0.14
0.38
0.12
0.40
0.10
0.42
0.08
0.44
0.06
0.46
0.04
0.48
0.02
0
0.49
0.47
0.45
0.43
0.41
0.39
0.37
0.35
0.33
0.31
0.29
0.27
0.25
0.23
0.21
0.19
0.17
0.15
0.13
0.11
0.09
0.07
0.05
0.03
0.01
0.01
0.03
0.05
000.07
0.09
0.11
0.13
0.15
0.17
0.19
000.21
0.23
0.25
0.27
0.29
0.31
0.33
0.35
0.37
0.39
0.41
0.43
0.45
0.47
0.49
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
L
O
A
D
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
G
E
N
E
R
A
T
O
R
2.0
5.0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
10
50
20
50
10
6.0
4.0
3.0
1.8
1.6
1.4
0.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
20
(
+JX
Z
O
)
0.2
1.0
0.8
0.6
0.4
0.2
0.4
0.6
0.8
1.0
2.0
50
10
6.0
4.0
3.0
1.8
1.6
1.4
1.2
1.0
0.9
0.8
0.7
0.6
0.3
0.2
0.1
20
1.0
0.8
0.6
0.4
0.2
0.4
0.6
0.8
1.0
0.4
0.5
NE
GA
TIV
E
RE
A
CT
A
N
C
E C
OM
P
O
N
E
N
T
(
JX
Z
O
)
0.2 GHz
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
P
OS
IT
IV
E
R
E
A
C
TA
N
C
E
CO
M
PO
NE
NT
REACTANCE COMPONENT
(
R
Z
O
)
V
CE
= 1 V
I
C
= 1 mA
A
N
G
L
E
O
F
R
E
F
L
E
C
T
I
O
N
C
O
E
F
F
C
I
E
N
T
I
N
D
E
G
R
E
E
S
160
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
10
20
30
40
50
00
60
70
80
90
100
110
120
130
140
150
0
0.02
0.48
0.04
0.46
0.06
0.44
0.08
0.42
0.10
0.40
0.12
0.38
0.04
0.36
0.16
0.34
0.18
0.32
0.20
0.30
0.22
0.28
0.24
0.26
0.26
0.24
0.28
0.22
0.30
0.20
0.32
0.18
0.34
0.16
0.36
0.14
0.38
0.12
0.40
0.10
0.42
0.08
0.44
0.06
0.46
0.04
0.48
0.02
0
0.49
0.47
0.45
0.43
0.41
0.39
0.37
0.35
0.33
0.31
0.29
0.27
0.25
0.23
0.21
0.19
0.17
0.15
0.13
0.11
0.09
0.07
0.05
0.03
0.01
0.01
0.03
0.05
000.07
0.09
0.11
0.13
0.15
0.17
0.19
000.21
0.23
0.25
0.27
0.29
0.31
0.33
0.35
0.37
0.39
0.41
0.43
0.45
0.47
0.49
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
L
O
A
D
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
G
E
N
E
R
A
T
O
R
2.0
5.0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
10
50
20
50
10
6.0
4.0
3.0
1.8
1.6
1.4
0.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
20
(
+JX
Z
O
)
0.2
1.0
0.8
0.6
0.4
0.2
0.4
0.6
0.8
1.0
2.0
50
10
6.0
4.0
3.0
1.8
1.6
1.4
1.2
1.0
0.9
0.8
0.7
0.6
0.3
0.2
0.1
20
1.0
0.8
0.6
0.4
0.2
0.4
0.6
0.8
1.0
0.4
0.5
NE
GA
TIV
E
RE
A
CT
A
N
C
E C
OM
P
O
N
E
N
T
(
JX
Z
O
)
P
OS
IT
IV
E
R
E
A
C
TA
N
C
E
CO
M
PO
NE
NT
REACTANCE COMPONENT
(
R
Z
O
)
V
CE
= 1 V
I
C
= 1 mA
2.0
1.8
1.6
S
22
S
11
1.4
1.2
1.0
0.8
0.6
0.4
0.2 GHz
5
2SC3663
[MEMO]