DATA SHEET
SILICON TRANSISTOR
2SC4093
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
DATA SHEET
Document No. P10365EJ3V1DS00 (3rd edition)
Date Published March 1997 N
Printed in Japan
1991
DESCRIPTION
The 2SC4093 is an NPN silicon epitaxial transistor designed for low
noise amplifier at VHF, UHF and CATV band.
It has large dynamic range and good current characteritics, and is
contatined in a 4 pins mini-mold package which enables high-isolation
gain.
FEATURES
Low Noise
NF = 1.1 dB TYP. @ V
CE
= 10 V, I
C
= 7 mA, f = 1.0 GHz
High Power Gains
S
21e
2
= 13 dB TYP. @ V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
ORDERING INFORMATION
PART
NUMBER
QUANTITY
PACKING STYLE
2SC4093-T1
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin3 (Base), Pin4 (Emitter) face to perforation side
of the tape.
2SC4093-T2
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin1 (Collector), Pin2 (Emitter) face to perforation
side of the tape.
* Please contact with responsible NEC person, if you require evaluation
sample.
Unit sample quantity shall be 50 pcs. (Part No.: 2SC4093)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Collector to Base Voltage
V
CBO
20
V
Collector to Emitter Voltage
V
CEO
12
V
Emitter to Base Voltage
V
EBO
3.0
V
Collector Current
I
C
100
mA
Total Power Dissipation
P
T
200
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
65 to +150
C
PACKAGE DIMENSIONS
(Units: mm)
PIN CONNECTIONS
1.
2.
3.
4.
Collector
Emitter
Base
Emitter
5
5
5
5
0 to 0.1
0.8
2.90.2
(1.8)
(1.9)
0.95
0.85
1.1
+0.2
-
0.1
0.16
+0.1
-
0.06
0.4
4
1
3
2
+0.1
-
0.05
2.8
+0.2
-
0.3
1.5
+0.2
-
0.1
0.6
+0.1
-
0.05
0.4
+0.1
-
0.05
0.4
+0.1
-
0.05
3
2SC4093
TYPICAL CHARACTERISTICS (T
A
= 25
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
100
0
10
20
50
100
200
50
1
5
10
50
0.5
100
150
T
A
-Ambient Temperature-
C
I
C
-Collector Current-mA
I
C
-Collector Current-mA
DC CURRENT GAIN vs.
COLLECTOR CURRENT
P
T
-Total Power Dissipation-mW
h
FE
-DC Current Gain
V
CE
= 10 V
INSERTION GAIN vs.
COLLECTOR CURRENT
|S
21e
|
2
-Insertion Gain-dB
0.1
0.5
0.2
1
2
1
2
5
10
20
V
CB
-Collector to Base Voltage-V
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
C
re
-Feed-back Capacitance-pF
f = 1.0 GHz
0
10
20
1
0.5
2
5
10
20
50
0
10
20
30
0.1
0.2
0.5
1.0
2.0
f-Frequency-GHz
INSERTION GAIN, MAXIMUM GAIN
vs. FREQUENCY
G
max
-Maximum Gain-dB
|S
21e
|
2
-Insetion Gain -dB
V
CE
= 10 V
I
C
= 20 mA
5
1
0.6
2
10
20
1
2
5
10
20
40
I
C
-Collector Current-mA
GAIN BANDWIDTH PRODUUT vs.
COLLECTOR CURRENT
f
T
-Gain Bandwidth Product-MHz
V
CE
= 10 V
Free Air
|S
21e
|
2
G
max
V
CE
= 10 V
f = 1.0 GHz
5
2SC4093
S-PARAMETER
S
11e
, S
22e
-FREQUENCY
90
30
-
30
60
-
60
180
150
-
150
120
-
120
-
90
4
0
8
12
16
20
S
21e
I
C
= 20 mA
I
C
= 5 mA
2.0 GHz
2.0 GHz
0.2 GHz
V
CE
= 10 V
freq. = 0.2 to 2 GHz (Step 200 MHz)
S
21e
-FREQUENCY
V
CE
= 10 V
freq. = 0.2 to 2 GHz (Step 200 MHz)
0
90
30
-
30
60
-
60
180
150
-
150
120
-
120
-
90
0.04
0
0.08 0.12 0.16
0.2
S
12e
I
C
= 20 mA
I
C
= 5 mA
2.0 GHz
0.2 GHz
S
12e
-FREQUENCY
V
CE
= 10 V
freq. = 0.2 to 2 GHz (Step 200 MHz)
0
1
5
2
-
2
-
5
0
0.2
-
0.2
0.6
0.6
1
0.2
-
0.6
-
1
S
11e
I
C
= 20 mA
I
C
= 20 mA
S
22e
I
C
= 5 mA
I
C
= 5 mA
0.2 GHz
0.2 GHz
2.0 GHz
2.0 GHz
S
21
S
21
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