DATA SHEET
SILICON TRANSISTOR
2SC4094
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
DATA SHEET
Document No. P10366EJ1V1DS00 (1st edition)
Date Published March 1997 N
Printed in Japan
1987
DESCRIPTION
The 2SC4094 is an NPN epitaxial silicon transistor designed for use in
low-noise and small signal amplifiers from VHF band to UHF band. Low-
noise figure, high gain, and high current capability achieve a very wide
dynamic range and excellent linearity. This achieved by direct nitride
passivated base surface process (DNP process) which is an NEC
proprietary new fabrication technique.
FEATURES
NF = 1.2 dB TYP. @f = 1.0 GHz, V
CE
= 8 V, I
C
= 7 mA
S
21e
2
= 15 dB TYP. @f = 1.0 GHz, V
CE
= 8 V, I
C
= 20 mA
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Collector to Base Voltage
V
CBO
20
V
Collector to Emitter Voltage
V
CEO
10
V
Emitter to Base Voltage
V
EBO
1.5
V
Collector Current
I
C
65
mA
Total Power Dissipation
P
T
200
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
65 to +150
C
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
I
CBO
1.0
A
V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current
I
EBO
1.0
A
V
EB
= 1 V, I
C
= 0
DC Current Gain
h
FE
50
250
V
CE
= 8V, I
C
= 20 mA
Gain Bandwidth Product
f
T
9
GHz
V
CE
= 8 V, I
C
= 20 mA, f = 1.0 GHz
Feed-Back Capacitance
C
re
0.25
0.8
pF
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
Insertion Power Gain
S
21e
2
13
15
dB
V
CE
= 8 V, I
C
= 20 mA, f = 1.0 GHz
Maximum Available Gain
MAG
17
dB
V
CE
= 8 V, I
C
= 20 mA, f = 1.0 GHz
Noise Figure
NF
1.2
2.0
dB
V
CE
= 8 V, I
C
= 7 mA, f = 1.0 GHz
h
FE
Classification
Class
R36/RCF *
R37/RCG *
R38/RCH *
Marking
R36
R37
R38
h
FE
50 to 100
80 to 160
125 to 250
* Old Specification / New Specification
PACKAGE DIMENSIONS
(Units: mm)
PIN CONNECTIONS
1.
2.
3.
4.
Collector
Emitter
Base
Emitter
5
5
5
5
0 to 0.1
0.8
2.90.2
(1.8)
(1.9)
0.95
0.85
1.1
+0.2
-
0.1
0.16
+0.1
-
0.06
0.4
4
1
3
2
+0.1
-
0.05
2.8
+0.2
-
0.3
1.5
+0.2
-
0.1
0.6
+0.1
-
0.05
0.4
+0.1
-
0.05
0.4
+0.1
-
0.05
2
2SC4094
TYPICAL CHARACTERISTICS (T
A
= 25
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
P
T
-Total Power Dissipation-mW
200
100
0
50
100
150
T
A
-Ambient Temperature-
C
DC CURRENT GAIN vs.
COLLECTOR CURRENT
h
FE
-DC Current Gain
I
C
-Collector Current-mA
GAIN BANDWIDTH PRODUT vs.
COLLECTOR CURRENT
f
T
-Gain Bandwidth Product-GHz
0.5
1
5
10
50
3
2
5
7
10
20
30
1
MAXIMUM AVAILABLE GAIN, INSERTION
GAIN vs. FREQUENCY
|S
21e
|
2
-Insertion Gain -dB
MAG-Maximum Available Gain-dB
I
C
-Collector Current-mA
f-Frequency-GHz
INSERTION GAIN vs.
COLLECTOR CURRENT
|S
21e
|
2
-Insertion Gain-dB
V
CB
-Collector to Base Voltage-V
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
C
re
-Feed-back Capacitance-pF
2.0
1.0
0.1
0.2
0.3
0.5
0.7
1
2
3
5
7
10
20
1
2
5
10
20
40
I
C
-Collector Current-mA
MAG
|S
21e
|
2
f = 1.0 GHz
V
CE
= 8 V
f = 1.0 GHz
V
CE
= 8 V
I
C
= 20 mA
0.1
0.2
0.5
1.0
2.0
V
CE
= 8 V
V
CE
= 8 V
30
10
7
5
3
2
20
30
20
10
0
20
10
0
200
100
10
20
50
Free air
4
2SC4094
S-PARAMETER
A
N
G
L
E
O
F
R
E
F
L
E
C
T
I
O
N
C
O
E
F
F
C
I
E
N
T
I
N
D
E
G
R
E
E
S
20
30
40
50
00
60
70
80
90
100
110
120
130
140
150
-
160
-
150
-
140
-
130
-
120
-
110
-
100
-
90
-
80
-
70
-
60
-
50
-
40
-
30
-
20
-
10
0
10
0.28
0.22
0.30
0.20
0.32
0.18
0.34
0.16
0.36
0.14
0.38
0.12
0.40
0.10
0.42
0.08
0.44
0.06
0.46
0.04
0.21
0.19
0.17
0.15
0.13
0.11
0.09
0.07
0.05
0.03
0.29
0.31
0.33
0.35
0.37
0.39
0.41
0.43
0.45
0.47
0.02 0.48
0.01
0.49
0
0
0.49
0.01
0.48
0.02
0.47
0.03
0.46
0.04
0.45
0.05
0.44
0.06
0.43
0.07
0.42
0.08
0.41
0.09
0.40
0.10
0.39
0.11
0.38
0.12
0.37
0.13
0.36
0.14
0.35
0.15
0.34
0.16
0.33
0.17
0.32
0.18
0.31
0.19
0.30
0.20
0.29
0.21
0.28
0.22
0.27
0.23
0.26
0.24
0.25
0.25
0.24
0.26
0.23
0.27
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
L
O
A
D
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
G
E
N
E
R
A
T
O
R
2.0
50
10
6.0
4.0
3.0
1.8
1.6
1.4
1.2
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.0
(
+JX
Z
O
)
0.2
0.4
0.6
0.8
1.0
0.8
0.7
0.6
0.3
0.2
0.1
0.2
1.0
0.8
0.6
0.4
0.2
1.0
0.8
0.6
0.4
0.4
0.5
5.0
10
50
3.0
4.0
1.8
2.0
1.2
1.0
0.9
1.4
1.6
REACTANCE COMPONENT
(
R
Z
O
)
NE
GA
TIV
E
RE
A
CT
A
N
C
E C
OM
P
O
N
E
N
T
P
OS
IT
IV
E
R
E
A
C
TA
N
C
E
CO
M
PO
NE
NT
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
0
(
-
JX
Z
O
)
20
20
0.2
0.4
0.6
0.8
1.0
S
11e
, S
22e
-FREQUENCY
S
21e
-FREQUENCY
90
0
30
-
30
60
-
60
180
150
-
150
120
-
120
-
90
4
0
8
12
16
20
S
21e
2GHz
90
0
30
-
30
60
-
60
180
150
-
150
120
-
120
-
90
0.04
0
0.08
0.12 0.16 0.2
S
12e
CONDITION V
CE
= 8 V, I
C
= 20/5 mA, freq. = 0.2 to 2 GHz (Step 200 MHz)
CONDITION V
CE
= 8 V
I
C
= 20/5 mA
freq. = 0.2 to 2 GHz (Step 200 MHz)
S
12e
-FREQUENCY
CONDITION V
CE
= 8 V
I
C
= 20/5 mA
freq. = 0.2 to 2 GHz (Step 200 MHz)
0.2 GHz
0.2 GHz
2 GHz
2 GHz
I
C
= 5 mA
I
C
= 5 mA
I
C
= 20 mA
I
C
= 20 mA
I
C
= 5 mA
I
C
= 5 mA
S
11e
S
22e
I
C
= 20 mA
I
C
= 20 mA
0.2 GHz
0.2 GHz
2GHz
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