1984
DATA SHEET
SILICON TRANSISTOR
2SC4183
RF AMPLIFIER FOR UHF TV TUNER
NPN SILICON EPITAXIAL TRANSISTOR
SUPER MINI MOLD
DESCRIPTION
The 2SC4183 is specifically designed for UHF RF amplifier applica-
tions. The 2SC4183 features high gain, low noise, and excellent forward
AGC characteristics in tiny plastic super mini mold package makes it
suitable for use in small type equipments such as Hybrid Integrated
Circuit and other applications.
FEATURES
Low NF and high G
pb
NF = 3.0 dB Typ.
G
pb
= 10 dB Typ. (f = 900 MHz)
Foward AGC characteristics.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Collector to Base Voltage
V
CB0
30
V
Collector to Emitter Voltage
V
CE0
25
V
Emitter to Base Voltage
V
EB0
3.0
V
Collector Current
I
C
20
mA
Total Power Dissipation
P
T
160
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
65 to +150
C
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
Characteristics
Symbol
MIN.
TYP.
MAX.
Unit
Test Conditions
Collector Cutoff Current
I
CB0
0.1
A
V
CB
= 10 V, I
E
= 0
DC Current Gain
h
FE
60
100
240
V
CE
= 5 V, I
C
= 2 mA
Gain Bandwidth Product
f
T
700
1 000
MHz
V
CE
= 5 V, I
C
= 2 mA
Output Capacitance
C
ob
0.55
1.0
pF
V
CB
= 5 V, I
E
= 0
Noise Figure
NF
3.0
4.8
dB
V
CE
= 5 V, I
C
= 2 mA, f = 900 MHz
Power Gain
G
pb
6
10
dB
V
CE
= 5 V, I
C
= 2 mA, f = 900 MHz
Collector Saturation Voltage
V
CE(sat)
0.5
V
I
C
= 10 mA, I
B
= 1 mA
h
FE
Classification
Rank
U16
U17
U18
Marking
U16
U17
U18
h
FE
60 to 120
90 to 180
120 to 240
Document No. P11188EJ4V0DS00 (4th edition)
(Previous No. TC-1432A)
Date Published February 1996 P
Printed in Japan
PACKAGE DIMENSIONS
in millimeters
2.1 0.1
1.25 0.1
2
1
3
2.0 0.2
0.3
+0.1
0
0.65
0.65
0.3
+0.1
0
0.15
+0.1
0.05
0 to 0.1
0.3
0.9 0.1
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
2SC4183
2
TYPICAL CHARACTERISTICS (T
A
= 25 C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
A
- Ambient Temperature - C
P
T
- Total Power Dissipation - mW
Free Air
200
150
100
50
0
50
100
150
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
BE
- Base to Emitter Voltage - V
1.0
0.9
0.8
0.7
0.6
0.5
I
C
- Collector Current - mA
10.0
2.0
5.0
1.0
0.2
0.5
0.1
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
I
C
- Collector Current - mA
20
18
16
14
12
10
8
6
4
2
0
V
CE
- Collector to Emitter Voltage - V
5
10
25
15
20
GAIN BANDWIDTH PRODUCT vs.
EMITTER CURRENT
f
T
- Gain Bandwidth Product - MHz
2000
I
E
- Emitter Current - mA
0.1
P
T
= 150 mW
160 A
140 A
120 A
100 A
80 A
60 A
40 A
I
C
= 20 A
1000
200
500
100
OUTPUT CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
C
ob
- Output Capacitance - pF
DC CURRENTGAIN vs
COLLECTOR CURRENT
h
FE
- DC Current Gain
200
I
C
- Collector Current - mA
100
20
50
10
0.2
1.0
0.5
2.0
5.0
20
10
V
CE
= 10 V
f = 100 MHz
V
CE
= 10 V
0.1 0.2
1.0
0.5
2.0
5.0
20.0
10.0
2.0
V
CB
- Collector to Base Voltage - V
1.0
0.2
0.5
0.1
f = 1 MHz
0.1 0.2
1.0
0.5
2.0
5.0
20
10
50
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