1996
DATA SHEET
SILICON TRANSISTOR
2SC4185
DESCRIPTION
The 2SC4185 is an NPN silicon epitaxial transistor intended for use
as a UHF oscillator and a mixer in a tuner of a TV receiver. The device
features stable oscillation and small frequency drift against any change
of the supply voltage and the ambient temperature.
It is designed for use in small type equipments especially recom-
mended for Hybrid Integrated Circuit and other applications.
FEATURES
Low Noise
High Conversion Gain
Easy & economical mounting realizable with plastic mold package for
Hybrid IC.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Collector to Base Voltage
V
CB0
30
V
Collector to Emitter Voltage
V
CE0
14
V
Emitter to Base Voltage
V
EB0
3.0
V
Collector Current
I
C
50
mA
Total Power Dissipation
P
T
160
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
65 to +150
C
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
Characteristics
Symbol
MIN.
TYP.
MAX.
Unit
Test Conditions
Collector Cutoff Current
I
CB0
0.1
A
V
CB
= 15 V, I
E
= 0
DC Current Gain
h
FE
40
100
180
V
CE
= 10 V, I
C
= 5 mA
Gain Bandwidth Product
f
T
1.5
2.0
GHz
V
CE
= 10 V, I
C
= 5 mA, f = 1 GHz
Output Capacitance
C
ob
1.0
1.3
pF
V
CB
= 10 V, I
E
= 0, f = 1 MHz
h
FE
Classifications
Rank
U21
U22
U23
Marking
U21
U22
U23
h
FE
40 to 80
60 to 120
90 to 180
Document No. P11190EJ2V0DS00 (2nd edition)
Date Published February 1996 P
Printed in Japan
PACKAGE DIMENSIONS
in millimeters
UHF OSCILLATOR AND VHF MIXER
NPN SILICON EPITAXIAL TRANSISTOR
SUPER MINI MOLD
2.1 0.1
1.25 0.1
2
1
3
2.0 0.2
0.3
+0.1
0
0.65
0.65
0.3
+0.1
0
0.15
+0.1
0.05
0 to 0.1
0.3
0.9 0.1
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
2SC4185
2
TYPICAL CHARACTERISTICS (T
A
= 25 C)
T
A
- Ambient Temperature - C
P
T
- Total Power Dissipation - mW
Free Air
200
150
100
50
0
50
100
150
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
I
C
- Collector Current - mA
20
16
12
8
4
0
V
CE
- Collector to Emitter Voltage - V
4
8
20
12
16
DC CURRENT GAIN vs.
COLLECTOR CURRENT
h
FE
- DC Current Gain
140
120
100
80
60
0
I
C
- Collector Current - mA
1
5
50
10
20
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
I
C
- Collector Current - mA
20
16
12
8
4
0
V
BE
- Base to Emitter Voltage - V
0.2
0.4
1.0
0.6
0.8
V
CE
= 10 V
P
T
= 150 mW
160 A
I
B
= 20 A
140 A
120 A
100 A
80 A
60 A
40 A
180 A
3
30
V
CE
= 10 V
C
ob
- Output Capacitance - pF
10
V
CB
- Collector to Base Voltage - V
2
3
100
5
10
20 30
50
2.0
5.0
1.0
0.2
0.5
f = 1 MHz
GAIN BANDWIDTH PRODUCT vs.
EMITTER CURRENT
f
T
- Gain Bandwidth Products - MHz
10 000
I
E
- Emitter Current - mA
2.0
100
5.0
10
20
50
2 000
5 000
1 000
200
500
V
CE
= 10 V
3 000
100
1.0
TOTAL POWER DISSIPATIOH vs.
AMBIENT TEMPERATURE
COLLECTOR CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
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