1996
DATA SHEET
SILICON TRANSISTOR
2SC4225
DESCRIPTION
The 2SC4225 is an NPN silicon epitaxial transistor designed for low
noise amplifier at VHF through UHF band.
It has large dynamic range and good current characteristics.
FEATURES
Low Noise and High Gain
NF = 1.5 dB TYP.
at V
CE
= 10 V, I
C
= 5 mA, f = 1 GHz
S
21e
2
= 10 dB TYP.
at V
CE
= 10 V, I
C
= 20 mA, f = 1 GHz
(reference value)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Collector to Base Voltage
V
CB0
25
V
Collector to Emitter Voltage
V
CE0
12
V
Emitter to Base Voltage
V
EB0
3.0
V
Collector Current
I
C
70
mA
Total Power Dissipation
P
T
160
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
65 to +150
C
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
Characteristics
Symbol
MIN.
TYP.
MAX.
Unit
Test Conditions
Collector Cutoff Current
I
CB0
1.0
A
V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current
I
EB0
1.0
A
V
EB
= 2 V, I
C
= 0
DC Current Gain
h
FE
40
80
200
V
CE
= 3 V, I
C
= 20 mA, pulsed
Gain Bandwidth Product
f
T
4
GHz
V
CE
= 3 V, I
C
= 20 mA, f = 1 GHz
Output Capacitance
C
ob
1.2
1.8
pF
V
CB
= 3 V, I
E
= 0, f = 1 MHz
Insertion Power Gain
S
21e
2
7.5
9.0
dB
V
CE
= 3 V, I
C
= 20 mA, f = 1 GHz
Noise Figure
NF
1.5
3.0
dB
V
CE
= 3 V, I
C
= 5 mA, f = 1GHz
h
FE
Classifications
Rank
R2
R3
Marking
R2
R3
h
FE
40 to 120
100 to 200
Document No. P11192EJ2V0DS00 (2nd edition)
Date Published February 1996 P
Printed in Japan
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
SUPER MINI MOLD
PACKAGE DIMENSIONS
in millimeters
2.1 0.1
1.25 0.1
2
1
3
2.0 0.2
0.3
+0.1
0
0.65
0.65
0.3
+0.1
0
0.15
+0.1
0.05
0 to 0.1
0.3
0.9 0.1
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
2SC4225
2
TYPICAL CHARACTERISTICS (T
A
= 25 C)
200
100
50
30
20
10
0.5
1
2
5
10
20
50 70
I
C
- Collector Current - mA
h
FE
- DC Current Gain
V
CE
= 10 V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
70
50
20
10
5
2
1
0.5
0.5
0.6
0.7
0.8
0.9
V
CE
= 10 V
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
I
C
- Collector Current - mA
V
BE
- Base to Emitter Voltage - V
7
5
2
0.5
0.2
0.1
0.5
1
2
5
10
20
50 70
I
C
- Collector Current - mA
f
T
- Gain Bandwidth Product - GHz
V
CE
= 10 V
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
15
10
5
0
0.5
1
2
5
10
20
50 70
I
C
- Collector Current - mA
S
21e
2
- Insertion Gain - dB
INSERTION GAIN vs.
COLLECTOR CURRENT
V
CE
= 10 V
f = 1.0 GHz
2
0.5
0.3
1
C
ob
- Output Capacitance - pF
0
0.5
1
2
5
10
20
30
f = 1.0 GHz
7
5
2
0
0.5
1
2
5
10
20
50 70
I
C
- Collector Current - mA
NF - Noise Figure - dB
NOISE FIGURE vs.
COLLECTOR CURRENT
V
CE
= 10 V
f = 1.2 GHz
6
4
3
1
V
CB
- Collector to Base Voltage - V
1
OUTPUT CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
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