The information in this document is subject to change without notice.
SILICON TRANSISTOR
2SC4226
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
SUPER MINI MOLD
1993
DATA SHEET
DESCRIPTION
The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low
noise amplifier.
It is suitable for a high density surface mount assembly since the transistor
has been applied small mini mold package.
FEATURES
Low Noise
NF = 1.2 dB TYP. @ f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
High Gain
|S
21e
|
2
= 9.0 dB TYP. @ f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
Small Mini Mold Package
EIAJ: SC-70
ORDERING INFORMATION
PART
QUANTITY
PACKING STYLE
NUMBER
2SC4226-T1
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin3 (Collector)face to perforation side of the
tape.
2SC4226-T2
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin1 (Emitter), Pin2 (Base) face to perforation
side of the tape.
*
Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4226)
1.25 0.1
2.1 0.1
2.0 0.2
0.3
0
+0.1
0.65
0.65
0.3
0
+0.1
2
1
3
0.9 0.1
0.3
0.15
0.05
+0.1
0 to 0.1
Marking
PACKAGE DIMENSIONS
in millimeters
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
Document No. P10368EJ3V0DS00 (3rd edition)
(Previous No. TC-2402)
Date Published July 1995 P
Printed in Japan
2
2SC4226
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Collector to Base Voltage
V
CBO
20
V
Collector to Emitter Voltage
V
CEO
12
V
Emitter to Base Voltage
V
EBO
3
V
Collector Current
I
C
100
mA
Total Power Dissipation
P
T
150
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
65 to +150
C
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITION
Collector Cutoff Current
I
CBO
1.0
A
V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current
I
EBO
1.0
A
V
EB
= 1 V, I
C
= 0
DC Current Gain
h
FE
40
110
250
V
CE
= 3 V, I
C
= 7 mA*
1
Gain Bandwidth Product
f
T
3.0
4.5
GHz
V
CE
= 3 V, I
C
= 7 mA
Feed back Capacitance
C
re
0.7
1.5
pF
V
CE
= 3 V, I
E
= 0, f = 1 MHz*
2
Insertion Power Gain
|S
21e
|
2
7
9
dB
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
Noise Figure
NF
1.2
2.5
dB
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
*1
Pulse Measurement ; PW
350
s, Duty Cycle
2 % Pulsed.
*2
Measured with 3 terminals bridge, Emitter and Case should be grounded.
h
FE
Classification
Rank
R23
R24
R25
Marking
R23
R24
R25
h
FE
40 to 80
70 to 140
125 to 250
3
2SC4226
TYPICAL CHARACTERISTICS (T
A
= 25 C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
T
A
Ambient Temperature C
P
T
Total Power Dissipation mW
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
BE
Base to Emitter Voltage V
I
C
Collector Current mA
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
V
CE
Collector to Emitter Voltage V
I
C
Collector Current mA
DC CURRENT GAIN vs.
COLLECTOR CURRENT
I
C
Collector Current mA
h
FE
DC Current Gain
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
I
C
Collector Current mA
f
T
Gain Bandwidth Product GHz
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
I
C
Collector Current mA
|S
21e
|
2
Insertion Power Gain dB
V
CE
= 3 V
f = 1.0 GHz
200
100
20
10
0
0.5
1.0
V
CE
= 3 V
25
20
15
10
5
0
5
10
V
CE
= 3 V
f = 1.0 GHz
200
100
50
20
10
0.5
1
5
10
50
V
CE
= 3 V
I
B
=
160
A
Free Air
0
50
100
150
140
A
120
A
100
A
80
A
60
A
40
A
20
A
20
10
5
2
1
0.5
1
5
10
50
15
10
5
0
0.5
1
5
10
50
100
4
2SC4226
NOISE FIGURE vs.
COLLECTOR CURRENT
I
C
Collector Current mA
NF Noise Figure dB
INSERTION POWER GAIN vs. FREQUENCY
f Frequency GHz
|S
21e
|
2
Insertion Power Gain dB
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
V
CB
Collector to Base Voltage V
C
re
Feed-back Capacitance pF
6
4
2
0
0.5
1
5
10
50
100
V
CE
= 3 V
f = 1 GHz
24
20
16
12
8
4
0
0.1
0.2
0.5
1.0
2.0
5.0
V
CE
= 3 V
I
C
= 7 mA
1
2
5
10
20
50
f = 1 MHz
5.0
1.0
0.5
0.2
0.1
2.0
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