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1998
Document No. D15594EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
DARLINGTON POWER TRANSISTOR
2SC4351
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR HIGH-SPEED SWITCHING
DATA SHEET
2002
The 2SC4351 is a high-speed Darlington power transistor. This
transistor is ideal for high-precision control such as PWM control for
pulse motors or blushless motor of OA and FA equipment.
FEATURES
Mold package that does not require an insulating board or
insulation bushing
On-chip C to B constant voltage diode for surge voltage
absorption
On-chip C to E reverse diode
Fast switching speed
ABSOLUTE MAXIMUM RATINGS (Ta = 25
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
60
10
V
Collector to emitter voltage
V
CEO
60
10
V
Emitter to base voltage
V
EBO
8.0
V
Collector current (DC)
I
C(DC)
5.0
A
Collector current (pulse)
I
C(pulse)
*
10
A
Base current (DC)
I
B(DC)
0.5
A
Total power dissipation
P
T
(Tc = 25
C)
20
W
Total power dissipation
P
T
(Ta = 25
C)
2.0
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
* PW
10 ms, duty cycle 50%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
Data Sheet D15594EJ2V0DS
2
2SC4351
ELECTRICAL CHARACTERISTICS (Ta = 25
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
= 40 V, I
E
= 0
0.5
A
DC current gain
h
FE1
*
V
CE
= 2.0 V, I
C
= 2.0 A
2,000
20,000
DC current gain
h
FE2
*
V
CE
= 2.0 V, I
C
= 4.0 A
500
Collector saturation voltage
V
CE(sat)
*
I
C
= 2.0 A, I
B
= 2.0 mA
1.5
V
Base saturation voltage
V
BE(sat)
*
I
C
= 2.0 A, I
B
= 2.0 mA
2.0
V
Turn-on time
t
on
0.7
s
Storage time
t
stg
2.5
s
Fall time
t
f
I
C
= 2.0 A, I
B1
=
-I
B2
= 2.0 mA,
R
L
= 25
, V
CC
50 V
Refer to the test circuit.
0.6
s
* Pulse test PW
350
s, duty cycle 2%
h
FE
CLASSIFICATION
Marking
M
L
K
h
FE1
2,000 to 5,000
4,000 to 10,000
8,000 to 20,000
Data Sheet D15594EJ2V0DS
3
2SC4351
TYPICAL CHARACTERISTICS (Ta = 25
C)
Co
l
l
e
c
to
r
Cu
r
r
e
n
t
I
C
(
A
)
Collector to Emitter Voltage V
CE
(V)
Case Temperature T
C
(
C)
Case Temperature T
C
(
C)
T
o
ta
l
P
o
we
r
Dis
s
i
p
a
ti
o
n
P
T
(W
)
I
C
D
e
r
a
ti
n
g
d
T
(
%
)
Co
l
l
e
c
to
r
Cu
r
r
e
n
t
I
C
(
A
)
Co
l
l
e
c
to
r
Cu
r
r
e
n
t
I
C
(
A
)
Base to Emitter Voltage V
BE
(V)
Collector to Emitter Voltage V
CE
(V)
T
r
an
si
en
t
T
h
e
r
ma
l
R
e
si
st
a
n
c
e
R
t
h
(j
-c
)
(
C/W
)
Pulse Width PW (ms)
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