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1998
Document No. D15599EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SC4553
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
2002
The 2SC4553 is a power transistor designed especially for low
collector saturation voltage and features large current switching at a
low power dissipation. In addition, a high h
FE
enables alleviation of
the driver load.
FEATURES
High h
FE
and low V
CE(sat)
:
h
FE
800 (V
CE
= 2 V, I
C
= 3 A)
V
CE(sat)
0.12 V (I
C
= 3 A, I
B
= 0.03 A)
On-chip C to E damper diode
Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
100
V
Collector to emitter voltage
V
CEO
100
V
Emitter to base voltage
V
EBO
7.0
V
Collector current (DC)
I
C(DC)
7.5
A
Collector current (pulse)
I
C(pulse)
*
10
A
Base current (DC)
I
B(DC)
2.0
A
Total power dissipation
P
T
(Tc = 25
C)
30
W
Total power dissipation
P
T
(Ta = 25
C)
2.0
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
* PW
10 ms, duty cycle 50%
PACKAGE DRAWING (UNIT: mm)
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ELECTRICAL CHARACTERISTICS (Ta = 25
C)
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