2001
NPN SILICON EPITAXIAL TRANSISTOR
2SC4783
NPN SILICON EPITAXIAL TRANSISTOR
DATA SHEET
Document No.
D15616EJ1V0DS00 (1st edition)
Date Published
July 2001 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SC4783 is NPN silicon epitaxial transistor.
FEATURES
High DC current gain: h
FE2
= 200 TYP.
High voltage: V
CEO
= 50 V
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Collector to Base Voltage
V
CBO
60
V
Collector to Emitter Voltage
V
CEO
50
V
Emitter to Base Voltage
V
EBO
5.0
V
Collector Current (DC)
I
C(DC)
100
mA
Collector Current (pulse)
Note1
I
C(pulse)
200
mA
Total Power Dissipation (T
A
= 25C)
Note2
P
T
200
mW
Junction Temperature
T
j
150
C
Storage Temperature Range
T
stg
55 to + 150
C
Notes 1. PW
10 ms, Duty Cycle
50%
2. When mounted on ceramic substrate of 3.0 cm
2
x 0.64 mm
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
= 60 V, I
E
= 0
100
nA
Emitter Cut-off Current
I
EBO
V
EB
= 5.0 V, I
C
= 0
100
nA
DC Current Gain
Note
h
FE1
V
CE
= 6.0 V, I
C
= 0.1 mA
50
-
h
FE2
V
CE
= 6.0 V, I
C
= 1.0 mA
90
200
600
-
Base to Emitter Voltage
Note
V
BE
V
CE
= 6.0 V, I
C
= 1.0 mA
0.62
V
Collector Saturation Voltage
Note
V
CE(sat)
I
C
= 100 mA, I
B
= 10 mA
0.15
0.3
V
Base Saturation Voltage
Note
V
BE(sat)
I
C
= 100 mA, I
B
= 10 mA
0.86
1.0
V
Gain Bandwidth Product
f
T
V
CE
= 6.0 V, I
E
=
-
10 mA
150
250
MHz
Output Capacitance
C
ob
V
CE
= 6.0 V, I
E
= 0, f = 1.0 MHz
3.0
4.0
pF
Note Pulsed: PW
350
s, Duty Cycle
2%
h
FE
CLASSFICATION
Marking
L4
L5
L6
L7
h
FE2
90 to 180
135 to 270
200 to 400
300 to 600
PACKAGE DRAWING (Unit: mm)
0.3 0.05
1.6 0.1
0.8 0.1
2
0.2
+0.1
0
0.5
1: Emitter
2: Base
3: Collector
0.5
1.0
1.6 0.1
3
1
0.6
0.75 0.05
0 to 0.1
0.1
+0.1
0.05
Data Sheet D15616EJ1V0DS
2
2SC4783
TYPICAL CHARACTERISTICS (T
A
= 25C)
COLLECTOR CURRENT vs. COLLECTOR TO
EMITTER VOLTAGE
0
0.5
1.0
1.5
2.0
100
80
60
40
20
0.2
0.3
0.4
0.5
0.6
0.8
0.7
0.9
1.0
I
B
= 0.1 mA
V
CE
- Collector to Emitter Voltage - V
I
C
- Collector Current - mA
COLLECTOR AND BASE SATURATION VOLTAGE vs.
COLLECTOR CURRENT
5
2
1
10
100
20
50
1
0.2
0.5
0.1
0.05
0.02
0.01
I
C
= 10 I
B
.
I
C
- Collector Current - mA
V
BE(sat)
- Base Saturation Voltage - V
V
CE(sat)
- Collector Saturation Voltage - V
V
CE(sat)
V
BE(sat)
OUTPUT CAPACITANCE vs. REVERSE VOLTAGE
5
2
1
10
100
20
50
10
2
5
1
0.5
0.2
0.1
f = 1.0 MHz
V
CB
- Collector to Base Voltage - V
C
ob
- Output Capacitance - pF
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
BE
- Base to Emitter Voltage - V
I
C
- Collector Current - mA
0.4
0.5
0.6
0.7
0.8
0.9
1.0
100
10
30
1
3
0.1
0.3
0.01
0.03
T
A
= 75
C
25
C
25
C
V
CE
= 6.0 V
COLLECTOR CURRENT vs. COLLECTOR TO
EMITTER VOLTAGE
20
10
30
40
50
10
8
6
4
2
0
I
B
= 5.0
A
45
40
35
30
25
20
15
10
V
CE
- Collector to Emitter Voltage - V
I
C
- Collector Current - mA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
A
- Ambient Temperature - C
P
T
- Total Power Dissipation - mW
0
100
125
75
25
150
200
300
Free air
250
150
50
50
100
When mounted on ceramic substrate of 3.0 cm x 0.64 mm
2
Data Sheet D15616EJ1V0DS
3
2SC4783
GAIN BANDWIDTH PRODUCT vs.
EMITTER CURRENT
-
5
-
2
-
1
-
10
-
100
-
20
-
50
1000
200
500
100
50
20
10
I
E
- Emitter Current - mA
f
T
- Gain Bandwidth Product - MHz
V
CE
= 6 V
1 V
DC CURRENT GAIN vs. COLLECTOR CURRENT
1
0.3
0.1
3
100
10
30
1000
500
200
100
50
20
10
I
C
- Collector Current - mA
h
FE
- DC Current Gain
V
CE
= 6 V
1 V
DC CURRENT GAIN vs. COLLECTOR CURRENT
1
0.3
0.1
3
100
10
30
1000
500
200
100
50
20
10
I
C
- Collector Current - mA
h
FE
- DC Current Gain
V
CE
= 6.0 V
T
A
= 75C
25C
-
25C
2SC4783
M8E 00. 4
The information in this document is current as of July, 2001. The information is subject to change
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