The information in this document is subject to change without notice.
SILICON TRANSISTOR
2SC4954
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
FEATURES
Low Noise, High Gain
Low Voltage Operation
Low Feedback Capacitance
C
re
= 0.3 pF TYP.
ORDERING INFORMATION
PART
QUANTITY
PACKING STYLE
NUMBER
2SC4954-T1
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin3 (Collector) face to perforation side of the
tape.
2SC4954-T2
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin1 (Emitter), Pin2 (Base) face to perforation
side of the tape.
*
Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4954)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Collector to Base Voltage
V
CBO
9
V
Collector to Emitter Voltage
V
CEO
6
V
Emitter to Base Voltage
V
EBO
2
V
Collector Current
I
C
10
mA
Total Power Dissipation
P
T
60
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
65 to +150
C
1993
DATA SHEET
Caution; Electrostatic Sensitive Device.
2.90.2
0.95
0.95
0.4
0.05
+0.1
1.5
0.4
0.05
+0.1
2.80.2
0.65
0.15
+0.1
3
2
1
0.16
0.06
+0.1
0 to 0.1
1.1 to 1.4
0.3
Marking
PACKAGE DIMENSIONS
in millimeters
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
Document No. P10376EJ2V0DS00 (2nd edition)
(Previous No. TD-2405)
Date Published July 1995 P
Printed in Japan
2
2SC4954
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITION
Collector Cutoff Current
I
CBO
0.1
A
V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current
I
EBO
0.1
A
V
EB
= 1 V, I
C
= 0
DC Current Gain
h
FE
75
150
V
CE
= 3 V, I
C
= 5 mA*
1
Gain Bandwidth Product
f
T
12
GHz
V
CE
= 3 V, I
C
= 5 mA, f = 2.0 GHz
Feed-back Capacitance
C
re
0.3
0.5
pF
V
CB
= 3 V, I
E
= 0, f = 1 MHz*
2
Insertion Power Gain
|S
21e
|
2
7
8.5
dB
V
CE
= 3 V, I
C
= 5 mA, f = 2.0 GHz
Noise Figure
NF
2.5
4.0
dB
V
CE
= 3 V, I
C
= 3 mA, f = 2.0 GHz
*1
Pulse Measurement; PW
350
s, Duty Cycle
2 % Pulsed.
*2
Measured with 3 terminals bridge, Emitter and Case should be grounded.
h
FE
Classification
Rank
T82
Marking
T82
h
FE
75 to 150
TYPICAL CHARACTERISTICS (T
A
= 25 C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
T
A
Ambient Temperature C
P
T
Total Power Dissipation mW
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
BE
Base to Emitter Voltage V
I
C
Collector Current mA
50
200
100
0
50
100
150
60 mW
40
30
20
10
0
0.5
1
V
CE
= 3 V
Free Air
3
2SC4954
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
V
CE
Collector to Emitter Voltage V
I
C
Collector Current mA
40
DC CURRENT GAIN vs.
COLLECTOR CURRENT
I
C
Collector Current mA
h
FE
DC Current Gain
200
0.1
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
I
C
Collector Current mA
f
T
Gain Bandwidth Product GHz
14
0.5
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
I
C
Collector Current mA
|S
21e
|
2
Insertion Power Gain dB
10
0.5
30
20
10
0
2
4
6
500 A
400 A
300 A
200 A
100
0
0.5 1
5
10
50 100
5 V
V
CE
= 3 V
12
10
8
6
4
2
1
2
5
10
20
5 V
3 V
V
CE
= 1 V
8
6
4
2
1
5
10
50
5 V
3 V
V
CE
= 1 V
f = 2 GHz
f = 2 GHz
100 A
I
B
=
NOISE FIGURE vs.
COLLECTOR CURRENT
I
C
Collector Current mA
NF Noise Figure dB
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
V
CB
Collector to Base Voltage V
C
re
Feed-back Capacitance pF
0.5
5
0.4
0.3
0.2
0.1
0
0.5
20
1
2
5
10
4
3
2
1
0
0.5
20
1
2
5
10
f = 2 GHz
V
CE
= 3 V
f = 1 MHz
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