The information in this document is subject to change without notice.
SILICON TRANSISTOR
2SC4956
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
FEATURES
Low Noise, High Gain
Low Voltage Operation
Low Feedback Capacitance
C
re
= 0.20 pF TYP.
ORDERING INFORMATION
PART
QUANTITY
PACKING STYLE
NUMBER
2SC4956-T1
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin3 (Base), Pin4 (Emitter) face to perforation
side of the tape.
2SC4956-T2
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin1 (Collector), Pin2 (Emitter) face to perfora-
tion side of the tape.
*
Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4956)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Collector to Base Voltage
V
CBO
9
V
Collector to Emitter Voltage
V
CEO
6
V
Emitter to Base Voltage
V
EBO
2
V
Collector Current
I
C
10
mA
Total Power Dissipation
P
T
60
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
65 to +150
C
1993
DATA SHEET
2.8
0.3
+0.2
1.5
0.1
+0.2
0.4
0.05
+0.1
0.4
0.05
+0.1
2.9 0.2
(1.8)
0.85
0.95
0.6
0.05
+0.1
0.4
0.05
+0.1
1.1
0.1
+0.2
0.8
0 to 0.1
0.16
0.06
+0.1
2
3
1
4
5
5
5
5
(1.9)
PACKAGE DIMENSIONS
in millimeters
PIN CONNECTIONS
1.
2.
3.
4.
Collector
Emitter
Base
Emitter
Caution; Electrostatic Sensitive Device.
Document No. P10378EJ2V0DS00 (2nd edition)
(Previous No. TD-2407)
Date Published July 1995 P
Printed in Japan
2
2SC4956
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITION
Collector Cutoff Current
I
CBO
0.1
A
V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current
I
EBO
0.1
A
V
EB
= 1 V, I
C
= 0
DC Current Gain
h
FE
75
150
V
CE
= 3 V, I
C
= 5 mA*
1
Gain Bandwidth Product
f
T
12
GHz
V
CE
= 3 V, I
C
= 5 mA, f = 2.0 GHz
Feed back Capacitance
C
re
0.2
0.4
pF
V
CB
= 3 V, I
E
= 0, f = 1 MHz*
2
Insertion Power Gain
|S
21e
|
2
9
11
dB
V
CE
= 3 V, I
C
= 5 mA, f = 2.0 GHz
Noise Figure
NF
2.5
4.0
dB
V
CE
= 3 V, I
C
= 3 mA, f = 2.0 GHz
*1
Pulse Measurement; PW
350
s, Duty Cycle
2 % Pulsed.
*2
Measured with 3 terminals bridge, Emitter and Case should be grounded.
h
FE
Classification
Rank
T82
Marking
T82
h
FE
75 to 150
TYPICAL CHARACTERISTICS (T
A
= 25 C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
T
A
Ambient Temperature C
P
T
Total Power Dissipation mW
COLLECTOR CURRENT
vs. BASE TO EMITTER VOLTAGE
V
BE
Base to Emitter Voltage V
I
C
Collector Current mA
50
200
100
0
50
100
150
60 mW
40
30
20
10
0
0.5
1
V
CE
= 3 V
Free Air
3
2SC4956
COLLECTOR CURRENT
vs. COLLECTOR TO EMITTER VOLTAGE
V
CE
Collector to Emitter Voltage V
I
C
Collector Current mA
40
DC CURRENT GAIN
vs. COLLECTOR CURRENT
I
C
Collector Current mA
h
FE
DC Current Gain
200
0.1
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
I
C
Collector Current mA
f
T
Gain Bandwidth Product GHz
14
0.5
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
I
C
Collector Current mA
|S
21e
|
2
Insertion Power Gain dB
12
0.5
30
20
10
0
2
4
6
500 A
400 A
300 A
200 A
100
0
0.5 1
5
10
50 100
5 V
V
CE
= 3 V
12
10
8
6
4
2
1
2
5
10
20
5 V
3 V
V
CE
= 1 V
10
8
6
4
1
5
10
50
5 V
3 V
V
CE
= 1 V
I
B
= 100 A
20
2
f = 2 GHz
f = 2 GHz
NOISE FIGURE
vs. COLLECTOR CURRENT
I
C
Collector Current mA
NF Noise Figure dB
FEED-BACK CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
V
CB
Collector to Base Voltage V
C
re
Feed-back Capacitance pF
0.5
5
0.4
0.3
0.2
0.1
0
0.5
20
1
2
5
10
4
3
2
1
0
0.5
20
1
2
5
10
f = 2 GHz
V
CE
= 3 V
f = 1 MHz
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