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Электронный компонент: 2SC4959

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PART
NUMBER
Embossed tape 8 mm wide.
2SC4959T1
3 Kpcs/Reel.
Pin3 (Collector) face to perfora-
tion side of the tape.
Embossed tape 8 mm wide.
2SC4959T2
3 Kpcs/Reel.
Pin1 (Emitter), Pin2 (Base) face
to perforation side of the tape.
1992
DATA SHEET
The mark 5 shows revised points.
SILICON TRANSISTOR
2SC4959
Caution; Electrostatic sensitive Device.
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
SUPER MINI MOLD
FEATURES
Low Noise, High Gain
Low Voltage Operation
Low Feedback Capacitance
C
re
= 0.4 pF TYP.
ORDERING INFORMATION
QUANTITY
PACKING STYLE
Document No. P10382EJ2V0DS00 (2nd edition)
(Previous No. TD-2410)
Date Published July 1995 P
Printed in Japan
1995
1.25
0.1
2.1
0.1
2.0
0.2
0.3
0
+0.1
0.65
0.65
0.3
0
+0.1
2
1
3
0.9
0.1
0.3
0.15
0.05
+0.1
0 to 0.1
Marking
PACKAGE DIMENSIONS
in millimeters
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
Collector to Base Voltage
V
CBO
9
V
Collector to Emitter Voltage
V
CEO
6
V
Emitter to Base Voltage
V
EBO
2
V
Collector Current
I
C
30
mA
Total Power Dissipation
P
T
150
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
65 to +150
C
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
* Please contact with responsible NEC person, if you require evaluation
sample.
Unit sample quantity shall be 50 pcs. (Part No.: 2SC4959)
2SC4959
2
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITION
Collector Cutoff Current
I
CBO
0.1
A
V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current
I
EBO
0.1
A
V
EB
= 1 V, I
C
= 0
DC Current Gain
h
FE
75
150
V
CE
= 3 V, I
C
= 10 mA
*1
Gain Bandwidth Product
f
T
12
GHz
V
CE
= 3 V, I
C
= 10 mA, f = 2.0 GHz
Feed back Capacitance
C
re
0.4
0.7
pF
V
CB
= 3 V, I
E
= 0, f = 1 MHz
*2
Insertion Power Gain
|S
21e
|
2
7
8.5
dB
V
CE
= 3 V, I
C
= 10 mA, f = 2.0 GHz
Noise Figure
NF
1.5
2.5
dB
V
CE
= 3 V, I
C
= 3 mA, f = 2.0 GHz
*1
Pulse Measurement ; PW
350
s, Duty Cycle
2 % Pulsed.
*2
Measured with 3 terminals bridge, Emitter and Case should be grounded.
h
FE
Classification
Rank
T83
Marking
T83
h
FE
75 to 150
TYPICAL CHARACTERISTICS (T
A
= 25
C)
50
200
100
0
50
100
150
40
30
20
10
0
0.5
1.0
V
CE
= 3 V
TOTAL POWER DISSIPATION
vs.AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Free Air
P
T
Total Power Dissipation mW
I
C
Collector Current mA
T
A
Ambient Temperature C
V
BE
Base to Emitter Voltage V
2SC4959
3
60
0
1
500 A
400 A
300 A
200 A
I
B
= 100 A
50
40
30
20
10
2
3
4
5
6
0.1
200
100
0
0.2
0.5
1
2
5
10
20
50 100
5 V
V
CE
= 3 V
14
0.5
12
10
8
6
4
2
1
2
5
10
20
50
5 V
3 V
V
CE
= 1 V
10
1
8
6
4
2
2
5
10
50
20
5 V
3 V
V
CE
= 1 V
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
f = 2 GHz
f = 2 GHz
V
CE
Collector to Emitter Voltage V
I
C
Collector Current mA
I
C
Collector Current mA
I
C
Collector Current mA
I
C
Collector Current mA
h
FE
DC Current Gain
f
T
Gain Bandwidth Product GHz
S
21e
2
Insertion Power Gain dB
m
m
m
m
m
4
0.5
3
2
1
0
1
2
5
10
20
50
0.2
0.5
1
2
5
10
20
0.3
0.4
0.5
0.6
f = 2 GHz
V
CE
= 3 V
NOISE FIGURE vs.
COLLECTOR CURRENT
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
f = 1 MHz
NF Noise Figure dB
I
C
Collector Current mA
V
CB
Collector to Base Voltage V
C
re
Feed-back Capacitance pF
2SC4959
4
SPARAMETER
(V
CE
= 3 V, I
C
= 1 mA, Z
O
= 50
)
f
S
11
S
21
S
12
S
22
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.200
0.9340
15.7
3.5100
164.8
0.0450
82.6
0.9850
8.7
0.400
0.9040
29.4
3.3520
150.7
0.0780
68.0
0.9410
17.1
0.600
0.8150
43.4
3.1060
138.0
0.1140
62.8
0.8960
23.6
0.800
0.7530
56.6
2.8840
126.3
0.1370
58.0
0.8260
29.9
1.000
0.6540
68.9
2.6050
115.1
0.1490
55.2
0.7830
34.7
1.200
0.5900
79.8
2.4490
105.4
0.1660
45.4
0.7220
38.0
1.400
0.5160
90.1
2.2610
96.8
0.1770
44.8
0.6790
42.0
1.600
0.4590
101.5
2.0780
89.4
0.1780
45.1
0.6430
45.2
1.800
0.4230
110.8
1.9250
83.7
0.1880
42.5
0.6290
46.8
2.000
0.3670
123.9
1.8700
76.3
0.1900
41.9
0.5880
51.4
2.200
0.3370
136.7
1.7790
69.9
0.2110
43.9
0.5630
54.3
2.400
0.3150
145.5
1.6600
64.1
0.2140
41.9
0.5520
57.0
2.600
0.3080
159.1
1.5690
59.4
0.2070
42.8
0.5450
59.2
2.800
0.2930
164.8
1.5190
55.3
0.2140
45.8
0.5220
64.5
3.000
0.2950
179.6
1.4610
50.7
0.2260
45.4
0.4960
61.3
(V
CE
= 3 V, I
C
= 3 mA, Z
O
= 50
)
f
S
11
S
21
S
12
S
22
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.200
0.8020
25.9
8.8990
154.2
0.0370
67.2
0.9420
15.7
0.400
0.6780
45.8
7.4880
134.4
0.0760
65.6
0.8040
26.6
0.600
0.5440
62.8
6.1260
119.6
0.0860
60.9
0.7060
33.2
0.800
0.4430
75.7
5.1230
108.1
0.1050
58.4
0.6250
36.6
1.000
0.3540
87.3
4.3050
99.1
0.1210
55.9
0.5660
38.3
1.200
0.2930
99.7
3.7880
91.3
0.1330
61.2
0.5190
41.4
1.400
0.2360
108.4
3.3560
84.8
0.1440
55.4
0.4950
43.9
1.600
0.2000
121.0
3.0100
79.1
0.1570
56.2
0.4660
44.5
1.800
0.1820
129.5
2.6960
74.4
0.1760
58.0
0.4560
44.5
2.000
0.1480
151.7
2.5340
69.4
0.1940
56.1
0.4310
48.8
2.200
0.1370
166.1
2.3820
64.0
0.2150
56.3
0.4050
51.9
2.400
0.1340
175.2
2.1870
60.0
0.2130
57.8
0.3990
52.8
2.600
0.1640
169.7
2.0530
55.8
0.2410
57.6
0.3950
52.9
2.800
0.1500
170.9
1.9660
53.0
0.2490
55.2
0.3750
59.2
3.000
0.1780
147.7
1.8710
49.6
0.2750
56.6
0.3740
60.8
2SC4959
5
SPARAMETER
(V
CE
= 3 V, I
C
= 5 mA, Z
O
= 50
)
f
S
11
S
21
S
12
S
22
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.200
0.6900
33.3
12.2960
147.1
0.0320
74.8
0.8850
19.7
0.400
0.5360
54.7
9.4300
125.5
0.0610
66.3
0.7210
30.3
0.600
0.4010
70.0
7.2390
111.3
0.0700
59.6
0.6030
34.5
0.800
0.3150
82.4
5.8220
101.1
0.0950
63.8
0.5230
36.7
1.000
0.2360
93.8
4.7830
93.4
0.1090
62.3
0.4870
38.0
1.200
0.1850
105.4
4.1700
86.4
0.1260
61.9
0.4600
38.8
1.400
0.1440
115.8
3.6410
80.7
0.1350
65.9
0.4360
40.4
1.600
0.1230
134.4
3.2380
76.1
0.1560
61.2
0.4170
42.6
1.800
0.1040
144.6
2.8910
71.4
0.1770
62.4
0.4020
43.9
2.000
0.1000
170.6
2.7040
67.3
0.1930
60.7
0.3940
45.8
2.200
0.1110
167.4
2.5330
62.6
0.2080
60.6
0.3710
50.3
2.400
0.1040
158.2
2.3270
58.7
0.2260
61.6
0.3500
50.2
2.600
0.1180
156.3
2.1850
54.9
0.2560
58.2
0.3560
51.2
2.800
0.1190
150.0
2.0910
52.6
0.2560
56.8
0.3520
58.1
3.000
0.1490
142.4
1.9760
49.0
0.2860
56.6
0.3410
56.9
(V
CE
= 3 V, I
C
= 10 mA, Z
O
= 50
)
f
S
11
S
21
S
12
S
22
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.200
0.5080
43.6
17.0900
135.9
0.0330
63.8
0.7930
26.2
0.400
0.3410
65.3
11.3980
114.2
0.0520
68.5
0.5910
32.9
0.600
0.2320
80.7
8.2250
102.0
0.0690
69.0
0.5130
32.9
0.800
0.1770
90.8
6.3950
93.8
0.0880
71.6
0.4480
32.8
1.000
0.1220
108.2
5.1870
87.2
0.1060
69.3
0.4180
35.9
1.200
0.1010
121.8
4.4390
81.6
0.1260
70.1
0.4030
33.3
1.400
0.0670
138.2
3.8770
76.9
0.1450
70.5
0.3930
36.5
1.600
0.0620
167.6
3.4350
72.4
0.1590
65.5
0.3680
36.2
1.800
0.0660
171.3
3.0650
68.8
0.1790
65.0
0.3610
39.5
2.000
0.0770
146.7
2.8540
65.0
0.2060
63.9
0.3480
42.3
2.200
0.0990
146.5
2.6590
60.5
0.2220
62.8
0.3360
46.6
2.400
0.1140
128.1
2.4400
57.0
0.2420
60.9
0.3370
48.8
2.600
0.1260
136.8
2.2790
53.5
0.2660
59.9
0.3170
47.2
2.800
0.1020
129.6
2.1950
50.9
0.2770
59.6
0.3280
55.1
3.000
0.1370
123.5
2.0800
47.9
0.2860
58.3
0.3100
51.2