PART
NUMBER
Embossed tape 8 mm wide.
2SC4959T1
3 Kpcs/Reel.
Pin3 (Collector) face to perfora-
tion side of the tape.
Embossed tape 8 mm wide.
2SC4959T2
3 Kpcs/Reel.
Pin1 (Emitter), Pin2 (Base) face
to perforation side of the tape.
1992
DATA SHEET
The mark 5 shows revised points.
SILICON TRANSISTOR
2SC4959
Caution; Electrostatic sensitive Device.
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
SUPER MINI MOLD
FEATURES
Low Noise, High Gain
Low Voltage Operation
Low Feedback Capacitance
C
re
= 0.4 pF TYP.
ORDERING INFORMATION
QUANTITY
PACKING STYLE
Document No. P10382EJ2V0DS00 (2nd edition)
(Previous No. TD-2410)
Date Published July 1995 P
Printed in Japan
1995
1.25
0.1
2.1
0.1
2.0
0.2
0.3
0
+0.1
0.65
0.65
0.3
0
+0.1
2
1
3
0.9
0.1
0.3
0.15
0.05
+0.1
0 to 0.1
Marking
PACKAGE DIMENSIONS
in millimeters
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
Collector to Base Voltage
V
CBO
9
V
Collector to Emitter Voltage
V
CEO
6
V
Emitter to Base Voltage
V
EBO
2
V
Collector Current
I
C
30
mA
Total Power Dissipation
P
T
150
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
65 to +150
C
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
* Please contact with responsible NEC person, if you require evaluation
sample.
Unit sample quantity shall be 50 pcs. (Part No.: 2SC4959)
2SC4959
2
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITION
Collector Cutoff Current
I
CBO
0.1
A
V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current
I
EBO
0.1
A
V
EB
= 1 V, I
C
= 0
DC Current Gain
h
FE
75
150
V
CE
= 3 V, I
C
= 10 mA
*1
Gain Bandwidth Product
f
T
12
GHz
V
CE
= 3 V, I
C
= 10 mA, f = 2.0 GHz
Feed back Capacitance
C
re
0.4
0.7
pF
V
CB
= 3 V, I
E
= 0, f = 1 MHz
*2
Insertion Power Gain
|S
21e
|
2
7
8.5
dB
V
CE
= 3 V, I
C
= 10 mA, f = 2.0 GHz
Noise Figure
NF
1.5
2.5
dB
V
CE
= 3 V, I
C
= 3 mA, f = 2.0 GHz
*1
Pulse Measurement ; PW
350
s, Duty Cycle
2 % Pulsed.
*2
Measured with 3 terminals bridge, Emitter and Case should be grounded.
h
FE
Classification
Rank
T83
Marking
T83
h
FE
75 to 150
TYPICAL CHARACTERISTICS (T
A
= 25
C)
50
200
100
0
50
100
150
40
30
20
10
0
0.5
1.0
V
CE
= 3 V
TOTAL POWER DISSIPATION
vs.AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Free Air
P
T
Total Power Dissipation mW
I
C
Collector Current mA
T
A
Ambient Temperature C
V
BE
Base to Emitter Voltage V
2SC4959
3
60
0
1
500 A
400 A
300 A
200 A
I
B
= 100 A
50
40
30
20
10
2
3
4
5
6
0.1
200
100
0
0.2
0.5
1
2
5
10
20
50 100
5 V
V
CE
= 3 V
14
0.5
12
10
8
6
4
2
1
2
5
10
20
50
5 V
3 V
V
CE
= 1 V
10
1
8
6
4
2
2
5
10
50
20
5 V
3 V
V
CE
= 1 V
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
f = 2 GHz
f = 2 GHz
V
CE
Collector to Emitter Voltage V
I
C
Collector Current mA
I
C
Collector Current mA
I
C
Collector Current mA
I
C
Collector Current mA
h
FE
DC Current Gain
f
T
Gain Bandwidth Product GHz
S
21e
2
Insertion Power Gain dB
m
m
m
m
m
4
0.5
3
2
1
0
1
2
5
10
20
50
0.2
0.5
1
2
5
10
20
0.3
0.4
0.5
0.6
f = 2 GHz
V
CE
= 3 V
NOISE FIGURE vs.
COLLECTOR CURRENT
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
f = 1 MHz
NF Noise Figure dB
I
C
Collector Current mA
V
CB
Collector to Base Voltage V
C
re
Feed-back Capacitance pF