1993
DATA SHEET
SILICON TRANSISTOR
Document No. P10385EJ2V0DS00 (2nd edition)
(Previous No. TD-2399)
Date Published July 1995 P
Printed in Japan
2SC5006
NPN SILICON EPITAXIAL TRANSISTOR
3 PINS ULTRA SUPER MINI MOLD
DESCRIPTION
The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from
VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which
is an NEC proprietary fabrication technique.
FEATURES
Low Voltage Use.
High f
T
: 4.5 GHz TYP. (@ V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz)
Low C
re
: 0.7 pF TYP. (@ V
CE
= 3 V, I
E
= 0, f = 1 MHz)
Low NF
: 1.2 dB TYP. (@ V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz)
High |S
21e
|
2
: 9 dB TYP. (@ V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz)
Ultra Super Mini Mold Package.
ORDERING INFORMATION
PART
QUANTITY
PACKING STYLE
NUMBER
2SC5006
50 pcs./Unit
2SC5006-T1
3 kpcs./Reel
* Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Collector to Base Voltage
V
CBO
20
V
Collector to Emitter Voltage
V
CEO
12
V
Emitter to Base Voltage
V
EBO
3.0
V
Collector Current
I
C
100
mA
Total Power Dissipation
P
T
125
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
60 to +150
C
1.6 0.1
0.8 0.1
1.6 0.1
1.0
0.5
0.5
0.2
+0.1
0
0.3
+0.1
0
2
1
3
0.75 0.05
0.6
0 to 0.1
0.15
+0.1
0.05
PACKAGE DIMENSIONS
in millimeters
1. Emitter
2. Base
3. Collector
Embossed tape 8 mm wide.
Pin3 (Collector) face to perforation side
of the tape.
2SC5006
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
I
CBO
1.0
A
V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current
I
EBO
1.0
A
V
EB
= 1 V, I
C
= 0
DC Current Gain
h
FE
80
160
V
CE
= 3 V, I
C
= 7 mA
*1
Gain Bandwidth Product
f
T
3.0
4.5
GHz
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
Feed-Back Capacitance
C
re
0.7
1.5
pF
V
CB
= 3 V, I
E
= 0, f = 1 MHz
*2
Insertion Power Gain
|S
21e
|
2
7.0
9.0
dB
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
Noise Figure
NF
1.2
2.5
dB
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
*1 Pulse Measurement PW
350
s, Duty Cycle
2 %
*2 The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance
bridge.
h
FE
Classification
RANK
FB
Marking
24
h
FE
80 to 160
2SC5006
3
TYPICAL CHARACTERISTICS (T
A
= 25 C)
20
0
10
1.0
0.5
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
P
T
Total Power Dissipation mW
150
0
50
T
A
Ambient Temperature C
150
100
50
100
200
0.5
10
50
5
25
0
5
10
20
15
10
5
V
CE
= 3 V
I
B
= 160 A
140 A
120 A
100 A
80 A
60 A
40 A
20 A
20
10
2
1
100
20
50
V
CE
= 3 V
14
0.5
0
50
5
10
0
0.5
100
8
6
4
2
20
10
2
1
6
2
4
V
CE
= 3 V
f = 1 GH
Z
50
20
10
5
1
2
100
8
10
12
V
CE
= 3 V
f = 1 GH
Z
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
I
C
Collector Current mA
h
FE
DC Current Gain
f
T
Gain Bandwidth Product GHz
|S
21e
|
2
Insertion Power Gain dB
I
C
Collector Current mA
V
BE
Base to Emitter Voltage V
I
C
Collector Current mA
I
C
Collector Current mA
V
CE
Collector to Emitter Voltage V
Free Air
I
C
Collector Current mA
2SC5006
4
25
0
5.0
0.5
3
0
1
100
50
2
2
2.0
1
2
50
1.0
0.5
0.2
0.1
V
CE
= 3 V
I
C
= 7 mA
V
CE
= 3 V
f = 1 GH
Z
20
10
5
1
0.5
20
15
10
5
0.1
0.2
1.0
2.0
MAG
|S
21e
|
2
5
10
20
f = 1 MH
Z
C
re
Feed-Back Capacitance pF
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
NF Noise Figure dB
V
CB
Collector to Base Voltage V
I
C
Collector Current mA
NOISE FIGURE vs. COLLECTOR CURRENT
MAXIMUM AVAILABLE GAIN, INSERTION
POWER GAIN vs. FREQUENCY
MAG Maximum Available Gain dB
|S
21
e|
2
Insertion Power Gain dB
f Frequency GHz
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