1994
DATA SHEET
SILICON TRANSISTOR
2SC5180
FEATURES
Low current consumption and high gain
S
21e
2
= 12 dB TYP. @ V
CE
= 2 V, I
C
= 7 mA, f = 2 GHz
S
21e
2
= 11 dB TYP. @ V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
Supper Mini-Mold package
ORDERING INFORMATION
PART
QUANTITY
ARRANGEMENT
NUMBER
Embossed tape, 8 mm wide, pins No. 3
2SC5180T1
(base) and No. 4 (emitter) facing the
3 000 units/reel
perforations
Embossed tape, 8 mm wide, pins No. 1
2SC5180T2
(collector) and No. 2 (emitter) facing the
perforations
* Contact your NEC sales representatives to order samples for evaluation (available
in batches of 50).
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Collector to Base Voltage
V
CBO
5
V
Collector to Emitter Voltage
V
CEO
3
V
Emitter to Base Voltage
V
EBO
2
V
Collector Current
I
C
10
mA
Total Power Dissipation
P
T
30
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
65 to +150
C
2.0 0.2
1.25 0.1
2
1
3
4
(1.25)
0.65
0.60
0.3
+0.1
0.05
0.4
+0.1
0.05
0.3
+0.1
0.05
0.3
+0.1
0.05
(1.3)
0.9 0.1
0.3
0.15
+0.1
0.05
0 to 0.1
2.1 0.2
T84
PACKAGE DIMENSIONS
(Units : mm)
1. Collector
2. Emitter
3. Base
4. Emitter
PIN CONNECTIONS
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
Caution;
This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Document No. P12104EJ2V0DS00 (2nd edition)
(Previous No. TC-2477)
Date Published December 1996 N
Printed in Japan
2
2SC5180
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
Collector Cutoff Current
I
CBO
100
nA
V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current
I
EBO
100
nA
V
EB
= 1 V, I
C
= 0
DC Current Gain
h
FE
70
140
V
CE
= 2 V, I
C
= 7 mA*
1
Insertion Power Gain (1)
S
21e
2
10
12
dB
V
CE
= 2 V, I
C
= 7 mA, f = 2 GHz
Insertion Power Gain (2)
S
21e
2
8.5
11
dB
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
Noise Figure (1)
NF
1.5
2.0
dB
V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
Noise Figure (2)
NF
1.5
2.0
dB
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
Gain Bandwidth Product (1)
f
T
12
15.5
GHz
V
CE
= 2 V, I
C
= 7 mA, f = 2 GHz
Gain Bandwidth Product (2)
f
T
10
13
GHz
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
Feedback Capacitance
C
re
0.3
0.5
pF
V
CB
= 2 V, I
E
= 0 mA, f = 1 MHz*
2
* 1 : Measured with pulses : Pulse width =
< 350
s, duty cycle =
< 2 %, pulsed
* 2 : Measured with a three-terminal bridge. The emitter and case terminal are connected to the guard terminal of the bridge.
h
FE
class
Class
FB
Marking
T84
h
FE
70 to 140
3
2SC5180
CHARACTERISTICS CURVES (T
A
= 25
C)
25
0
20
15
10
5
1.0
2.0
3.0
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
I
C
Collector Current mA
V
CE
Collector to Emitter Voltage V
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
0
50
200
100
0
50
100
150
40
30
20
10
0.5
1.0
T
A
Ambient Temperature C
V
BE
Base to Emitter Voltage V
P
T
Total Power Dissipation mW
I
C
Collector Current mA
V
CE
= 2 V
30 mW
I
B
= 20 A
40 A
60 A
80 A
100 A
120 A
140 A
160 A
180 A
200 A
Passive
air cooling
GAIN BAND WIDTH PRODUCT
vs. COLLECTOR CURRENT
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
1
14
18
1
2
5
10
12
10
8
6
2
10
I
C
Collector Current mA
I
C
Collector Current mA
f
T
Gain Bandwidth Product GHz
16
14
12
10
8
6
4
f = 2 GHz
4
5
S
21e
2
Insertion Power Gain dB
V
CE
= 2 V
V
CE
= 1 V
f = 2 GHz
2 V
V
CE
= 1 V
I
C
Collector Current mA
h
FE
DC Current Gain
DC CURRENT GAIN vs.
COLLECTOR CURRENT
500
200
100
10
20
50
1
2
5
10
20
50
100
V
CE
= 1 V
V
CE
= 2 V
4
2SC5180
0
4
3
2
1
10
20
100
0.1
0.3
0.4
0.5
1.0
2.0
3.0
4.0
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
NOISE FIGURE vs.
COLLECTOR CURRENT
NF Noise Figure dB
I
C
Collector Current mA
C
re
Feedback Capacitance pF
V
CB
Collector to Base Voltage V
5.0
0.2
1
2
5
V
CE
= 1 V
V
CE
= 2 V
f = 2 GHz
f = 1 MHz
0
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