SILICON TRANSISTOR
FEATURES
Low current consumption and high gain
|S
21e
|
2
= 10.5 dB
TYP.
@ V
CE
= 2 V, I
C
= 7 mA, f = 2 GHz
|S
21e
|
2
= 9.0 dB
TYP.
@V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
Ultra Super Mini-Mold package
ORDERING INFORMATION
PART
QUANTITY
ARRANGEMENT
NUMBER
2SC5181
50 units/box
2SC5181-T1
3 000 units/reel
*
Contact your NEC sales representatives to order samples for
evaluation (available in batches of 50).
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Collector to Base Voltage
V
CBO
5
V
Collector to Emitter Voltage
V
CEO
3
V
Emitter to Base Voltage
V
EBO
2
V
Collector Current
I
C
10
mA
Total Power Dissipation
P
T
30
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
65 to +150
C
2SC5181
Document No. P12105EJ2V0DS00 (2nd edition)
(Previous No. TC-2478)
Date Published November 1996 N
Printed in Japan
1994
DATA SHEET
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
1.6 0.1
0.8 0.1
3
2
1
1.6 0.1
1.0
0.5
0.5
0.75 0.05
0.6
0.15
0.05
+0.1
0.3
0
+0.1
0.2
0
+0.1
0 to 0.1
84
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
PACKAGE DIMENSIONS
(Units: mm)
Embossed tape, 8 mm wide, pin No. 3
(collector) facing the perforation
Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
2SC5181
2
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
Collector Cutoff Current
I
CBO
100
nA
V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current
I
EBO
100
nA
V
EB
= 1 V, I
C
= 0
DC Current Gain
h
FE
70
140
V
CE
= 2 V, I
C
= 7 mA
*1
Insertion Power Gain (1)
|S
21e
|
2
8.0
10.5
dB
V
CE
= 2 V, I
C
= 7 mA, f = 2 GHz
Insertion Power Gain (2)
|S
21e
|
2
7.0
9.0
dB
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
Noise Figure (1)
NF
1.5
2.0
dB
V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
Noise Figure (2)
NF
1.5
2.0
dB
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
Gain Bandwidth Product (1)
f
T
10
13
GHz
V
CE
= 2 V, I
C
= 7 mA, f = 2 GHz
Gain Bandwidth Product (2)
f
T
8.5
12
GHz
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
Feedback Capacitance
C
re
0.4
0.6
pF
V
CB
= 2 V, I
E
= 0 mA, f = 1 MHz
*2
*1.
Measured with pulses: Pulse width
350
s, duty cycle
2 %, pulsed
*2.
Measured with a three-terminal bridge. The emitter and case terminal are connected to the guard terminal
of the bridge.
h
FE
Class
Class
FB
Marking
84
h
FE
70 to 140
2SC5181
3
CHARACTERISTICS CURVES (T
A
= 25
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
A
Ambient Temperature C
P
T
Total Power Dissipation mW
0
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
BE
Base to Emitter Voltage V
I
C
Collector Current mA
0
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER
V
CE
Collector to Emitter Voltage V
I
C
Collector Current mA
0
V
CE
= 2 V
50
30 mW
100
200
100
150
0.5
1.0
10
20
30
40
50
20
15
10
5
25
1.0
2.0
3.0
200 A
180 A
160 A
140 A
120 A
100 A
80 A
60 A
40 A
I
B
= 20 A
Passive air cooling
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
I
C
Collector Current mA
f
T
Gain Bandwidth Product GHz
1
I
C
Collector Current mA
|S
21e
|
2
Insertion Power Gain dB
0
1
2
3
5
7
10
20
5
10
5
10
15
f = 2 GHz
f = 2 GHz
2
3
5
7
10
20
V
CE
= 2 V
V
CE
= 1 V
V
CE
= 2 V
V
CE
= 1 V
I
C
Collector Current mA
h
FE
DC Current Gain
DC CURRENT GAIN vs.
COLLECTOR CURRENT
500
200
100
10
20
50
1
2
5
10
20
50
100
V
CE
= 1 V
V
CE
= 2 V
2SC5181
4
NOISE FIGURE vs.
COLLECTOR CURRENT
I
C
Collector Current mA
NF Noise Figure dB
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
2
1
1
2
3
7
10
5
3
20
V
CB
Collector to Base Voltage V
C
re
Feedback Capacitance pF
0.0
2.0
4.0
6.0
8.0
10.0
0.2
0.4
0.6
0.8
f = 1 MHz
f = 2 GHz
V
CE
= 1 V
V
CE
= 2 V
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