1994
DATA SHEET
SILICON TRANSISTOR
2SC5186
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
FEATURES
Low Noise
NF = 1.3 dB
TYP.
@ V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
NF = 1.3 dB
TYP.
@ V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
Ultra Super Mini-Mold package
ORDERING INFORMATION
PART
QUANTITY
ARRANGEMENT
NUMBER
2SC5186
50 units/box
Embossed tape, 8 mm wide,
2SC5186-T1
3 000 units/reel
Pin 3 (Collector) facing the perforations.
* Contact your NEC sales representatives to order samples for
evaluation (available in batches of 50).
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Collector to Base Voltage
V
CBO
5
V
Collector to Emitter Voltage
V
CEO
3
V
Emitter to Base Voltage
V
EBO
2
V
Collector Current
I
C
30
mA
Total Power Dissipation
P
T
90
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
65 to +150
C
Document No. P12110EJ2V0DS00 (2nd edition)
(Previous No. TC-2483)
Date Published November 1996 N
Printed in Japan
1.6 0.1
0.8 0.1
1.6 0.1
1.0
0.5
0.5
0.2
+0.1
0
0.3
+0.1
0
2
1
3
0.75 0.05
0.6
0.15
+0.1
0.05
0 to 0.1
PACKAGE DIMENSIONS
(Units: mm)
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
86
2
2SC5186
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
Collector Cutoff Current
I
CBO
100
nA
V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current
I
EBO
100
nA
V
EB
= 1 V, I
C
= 0
DC Current Gain
h
FE
70
140
V
CE
= 2 V, I
C
= 20 mA
*1
Insertion Power Gain (1)
|S
21e
|
2
8.5
10
dB
V
CE
= 2 V, I
C
= 20 mA,
f = 2 GHz
Insertion Power Gain (2)
|S
21e
|
2
6.0
7.5
dB
V
CE
= 1 V, I
C
= 10 mA,
f = 2 GHz
Noise Figure (1)
NF
1.3
2.0
dB
V
CE
= 2 V, I
C
= 3 mA,
f = 2 GHz
Noise Figure (2)
NF
1.3
2.0
dB
V
CE
= 1 V, I
C
= 3 mA,
f = 2 GHz
Gain Bandwidth Product (1)
f
T
9
11
GHz
V
CE
= 2 V, I
C
= 20 mA,
f = 2 GHz
Gain Bandwidth Product (2)
f
T
7
9
GHz
V
CE
= 1 V, I
C
= 10 mA,
f = 2 GHz
Feed-back Capacitance
C
re
0.4
0.8
pF
V
CB
= 2 V, I
E
= 0 mA,
f = 1 MHz
*2
*1
Measured with pulses: Pulse width
350
s, duty clcye
2 %, pulsed.
*2
Measured with a three-terminal bridge. The emitter and case terminal are connected to the guard terminal
of the bridge.
h
FE
Class
Class
FB
Marking
86
h
FE
70 to 140
3
2SC5186
CHARACTERISTICS CURVES (T
A
= 25 C)
200 A
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
T
A
- Ambient Temperature - C
P
T
- Total Power Dissipation - mW
0
COLLECTOR CURRENT
vs. COLLECTOR TO EMITTER VOLTAGE
V
CE
- Collector to Emitter Voltage - V
I
C
- Collector Current - mA
0
COLLECTOR CURRENT
vs. BASE TO EMITTER VOLTAGE
V
BE
- Base to Emitter Voltage - V
V
CE
= 2 V
I
C
- Collector Current - mA
0.5
1.0
50
90 mW
100
200
100
150
20
15
10
5
25
1.0
2.0
3.0
20
10
40
30
50
180 A
160 A
140 A
120 A
100 A
80 A
60 A
40 A
I
B
= 20 A
0
Passive air cooling
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
I
C
- Collector Current - mA
f
T
- Gain Bandwidth Product - GHz
1
I
C
- Collector Current - mA
|S
21e
|
2
- Insertion Power Gain - dB
0
1
2
3
5
7
10
20
30
5
10
5
10
15
f = 2 GHz
2
3
5
7
10
20
30
V
CE
= 2 V
V
CE
= 1 V
V
CE
= 2 V
V
CE
= 1 V
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
f = 2 GHz
I
C
- Collector Current - mA
h
FE
- DC Current Gain
DC CURRENT GAIN vs.
COLLECTOR CURRENT
500
200
100
10
20
50
1
2
5
10
20
50
100
V
CE
= 2 V
V
CE
= 1 V
4
2SC5186
NOISE FIGURE
vs. COLLECTOR CURRENT
I
C
- Collector Current - mA
NF - Noise Figure - dB
1
FEED-BACK CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
V
CB
- Collector to Base Voltage - V
C
re
- Feed-back Capacitance - pF
2
1
2
3
3
5
7 10
20
30
2.0
4.0
6.0
8.0
10.0
0.2
0.4
0.6
0.8
V
CE
= 1 V
V
CE
= 2 V
f = 1 MHz
f = 2 GHz
0.0
5
2SC5186
S-PARAMETERS
V
CE
= 1 V, I
C
= 1 mA, Z
O
= 50
FREQUENCY
S
11
S
21
S
12
S
22
MHz
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
MAG
0.849
0.729
0.661
0.600
0.546
0.503
0.479
0.432
0.408
ANG
51.2
67.5
83.1
96.6
110.6
125.3
137.9
151.1
166.1
MAG
3.157
2.868
2.633
2.501
2.334
2.147
2.038
1.862
1.687
ANG
134.7
121.5
108.9
99.1
91.2
82.3
74.1
68.4
61.1
MAG
0.121
0.162
0.189
0.202
0.217
0.231
0.225
0.222
0.218
ANG
55.5
47.2
40.4
35.1
30.5
27.5
27.3
24.8
21.0
MAG
0.898
0.797
0.703
0.664
0.617
0.567
0.515
0.481
0.452
ANG
29.3
35.8
43.2
50.1
55.0
59.2
63.8
68.2
72.9
V
CE
= 1 V, I
C
= 3 mA, Z
O
= 50
FREQUENCY
S
11
S
21
S
12
S
22
MHz
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
MAG
0.587
0.475
0.402
0.351
0.319
0.313
0.305
0.297
0.310
ANG
77.1
96.8
112.4
127.9
144.1
158.2
169.6
176.3
162.4
MAG
6.278
5.167
4.424
3.969
3.480
3.106
2.884
2.586
2.313
ANG
117.3
104.5
93.6
86.1
79.7
72.4
66.8
62.7
56.7
MAG
0.094
0.120
0.136
0.151
0.164
0.179
0.187
0.195
0.203
ANG
47.5
44.7
43.1
42.8
41.2
41.7
42.7
42.1
39.5
MAG
0.675
0.544
0.453
0.409
0.361
0.325
0.289
0.263
0.244
ANG
45.1
51.6
58.0
63.0
66.8
71.1
76.7
80.5
87.2
V
CE
= 1 V, I
C
= 5 mA, Z
O
= 50
FREQUENCY
S
11
S
21
S
12
S
22
MHz
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
MAG
0.449
0.362
0.302
0.271
0.257
0.261
0.266
0.272
0.293
ANG
91.8
113.0
128.0
144.6
161.3
173.5
176.1
163.7
151.0
MAG
7.506
5.961
5.003
4.408
3.813
3.389
3.125
2.795
2.492
ANG
109.0
97.4
87.8
81.5
75.6
69.1
64.3
60.7
55.2
MAG
0.081
0.102
0.122
0.138
0.157
0.172
0.186
0.196
0.206
ANG
47.3
50.2
47.4
49.3
48.8
48.1
48.7
48.4
45.3
MAG
0.545
0.428
0.350
0.314
0.272
0.243
0.216
0.196
0.181
ANG
52.2
57.6
63.2
66.8
71.0
75.8
82.6
86.9
95.5
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