1994
DATA SHEET
SILICON TRANSISTOR
FEATURES
PACKAGE DRAWINGS
Low Voltage Operation, Low Phase Distortion
(Unit: mm)
Low Noise
NF = 1.5 dB TYP. @V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz
NF = 1.7 dB TYP. @V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
Large Absolute Maximum Collector Current
I
C
= 100 mA
4-Pin Mini Mold Package
EIAJ: SC-61
ORDERING INFORMATION
PART NUMBER
QUANTITY
PACKING STYLE
2SC5192-T1
3 Kpcs/Reel
Embossed tape 8 mm wide.
Pin 3 (Base), Pin 4 (Emitter) face to perforation
side of the tape.
2SC5192-T2
3 Kpcs/Reel
Embossed tape 8 mm wide.
Pin 1 (Collector), Pin 2 (Emitter) face to
perforation side of the tape.
Remark
If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
V
CBO
9
V
Collector to Emitter Voltage
V
CEO
6
V
Emitter to Base Voltage
V
EBO
2
V
Collector Current
I
C
100
mA
Total Power Dissipation
P
T
200
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
65 to +150
C
2SC5192
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
0 to 0.1
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
2.90.2
T88
(1.9)
0.4
0.05
+0.1
0.4
0.05
+0.1
0.4
0.05
+0.1
0.6
0.05
+0.1
0.16
0.06
+0.1
(1.8)
0.8
1.5
0.1
+0.2
2.8
0.3
+0.2
2
1
0.95
0.85
4
3
5
5
5
5
1.1
0.1
+0.2
Document No. P10402EJ2V0DS00 (2nd edition)
(Previous No. TD-2485)
Date Published August 1995
Printed in Japan
2SC5192
2
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
PARAMETER
SYMBOL
CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cutoff Current
I
CBO
V
CB
= 5 V, I
E
= 0
100
nA
Emitter Cutoff Current
I
EBO
V
EB
= 1 V, I
C
= 0
100
nA
DC Current Gain
h
FE
V
CE
= 1 V, I
C
= 3 mA
Note 1
80
160
Insertion Power Gain (1)
|S
21e
|
2
V
CE
= 1 V, I
C
= 3 mA, f = 2.0 GHz
3
4.0
dB
Insertion Power Gain (2)
|S
21e
|
2
V
CE
= 3 V, I
C
= 20 mA, f = 2.0 GHz
8
dB
Noise Figure (1)
NF
V
CE
= 1 V, I
C
= 3 mA, f = 2.0 GHz
1.7
2.5
dB
Noise Figure (2)
NF
V
CE
= 3 V, I
C
= 7 mA, f = 2.0 GHz
1.5
dB
Gain Bandwidth Product (1)
f
T
V
CE
= 1 V, I
C
= 3 mA, f = 2.0 GHz
4
4.5
GHz
Gain Bandwidth Product (2)
f
T
V
CE
= 3 V, I
C
= 20 mA, f = 2.0 GHz
9
GHz
Collector Capacitance
C
re
V
CB
= 1 V, I
E
= 0, f = 1.0 MHz
Note 2
0.65
0.8
pF
Notes 1. Pulse Measurement: PW
350
s, Duty cycle
2 %, Pulsed
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
h
FE
Classification
Rank
FB
Marking
T88
h
FE
80 to 160
2SC5192
3
0
50
Ambient Temperature T
A
(C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Free Air
Total Power Dissipation P
T
(mW)
100
150
100
200
0
1
2
3
4
5
6
7
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Collector Current I
C
(mA)
10
20
30
200 A
180 A
160 A
140 A
120 A
100 A
80 A
60 A
40 A
I
B
= 20 A
0
0.5
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 1 V
Collector Current I
C
(mA)
1
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
20
100
50
0.1
1
0.2
2
20
50
5
0.5
Collector Current I
C
(mA)
DC Current Gain h
FE
10
100
100
0
200
V
CE
= 1 V
DC CURENT GAIN vs.
COLLECTOR CURRENT
0
1
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
f = 2 GHz
Gain Bandwidth Product f
T
(GHz)
10
20
50
2
5
100
1
10
20
50
2
5
100
2
4
6
8
10
0
2
4
6
8
10
Collector Current I
C
(mA)
INSERTION GAIN vs.
COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
V
CE
= 3 V
V
CE
= 1 V
f = 2 GHz
V
CE
= 3 V
V
CE
= 1 V
TYPICAL CHARACTERISTICS (T
A
= 25
C)
2SC5192
4
1
10
20
50
2
5
100
0
Collector Current I
C
(mA)
NOISE FIGURE vs.
COLLECTOR CURRENT
f = 2 GHz
Noise Figure NF (dB)
1
2
3
4
5
0.2
0
Collector to Base Voltage V
CB
(V)
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
f = 1 MHz
Feed-back Capacitance C
re
(pF)
8.0
10.0
4.0
2.0
6.0
0.4
0.6
0.8
1.0
0
0.1
Frequency f (GHz)
MAXIMUM AVAILABLE GAIN / INSERTION
POWER GAIN vs. FREQUENCY
V
CE
= 1 V
I
C
= 3 mA
Maximum Available Power Gain MAG (dB)
Insertion Power Gain |S
21e
|
2
(dB)
1
2
5
0.2
0.5
10
10
20
30
40
V
CE
= 3 V
V
CE
= 1 V
MAG
|S
21e
|
2