1994
DATA SHEET
SILICON TRANSISTOR
FEATURES
PACKAGE DRAWINGS
Low Voltage Operation, Low Phase Distortion
(Unit: mm)
Low Noise
NF = 1.5 dB TYP. @V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz
NF = 1.7 dB TYP. @V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
Large Absolute Maximum Collector Current
I
C
= 100 mA
4-Pin Compact Mini Mold Package
ORDERING INFORMATION
PART NUMBER
QUANTITY
PACKING STYLE
2SC5194-T1
3 Kpcs/Reel
Embossed tape 8 mm wide.
Pin 3 (Base), Pin 4 (Emitter) face to perforation
side of the tape.
2SC5194-T2
3 Kpcs/Reel
Embossed tape 8 mm wide.
Pin 1 (Collector), Pin 2 (Emitter) face to
perforation side of the tape.
Remark
If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
V
CBO
9
V
Collector to Emitter Voltage
V
CEO
6
V
Emitter to Base Voltage
V
EBO
2
V
Collector Current
I
C
100
mA
Total Power Dissipation
P
T
150
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
65 to +150
C
2SC5194
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
2.10.2
1.250.1
2.00.2
0.65
3
T88
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
0.60
(1.25)
0.3
0.05
+0.1
1
2
+0.1
0.3
0.05
+0.1
0.15
0.05
+0.1
0.3
0.90.1
0 to 0.1
(1.3)
0.3
0.05
4
0.4
0.05
+0.1
Document No. P10397EJ2V0DS00 (2nd edition)
(Previous No. TD-2487)
Date Published August 1995 P
Printed in Japan
2SC5194
2
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
PARAMETER
SYMBOL
CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cutoff Current
I
CBO
V
CB
= 5 V, I
E
= 0
100
nA
Emitter Cutoff Current
I
EBO
V
EB
= 1 V, I
C
= 0
100
nA
DC Current Gain
h
FE
V
CE
= 1 V, I
C
= 3 mA
Note 1
80
160
Insertion Power Gain (1)
|S
21e
|
2
V
CE
= 1 V, I
C
= 3 mA, f = 2.0 GHz
3.0
4.0
dB
Insertion Power Gain (2)
|S
21e
|
2
V
CE
= 3 V, I
C
= 20 mA, f = 2.0 GHz
8.5
dB
Noise Figure (1)
NF
V
CE
= 1 V, I
C
= 3 mA, f = 2.0 GHz
1.7
2.5
dB
Noise Figure (2)
NF
V
CE
= 3 V, I
C
= 7 mA, f = 2.0 GHz
1.5
dB
Gain Bandwidth Product (1)
f
T
V
CE
= 1 V, I
C
= 3 mA, f = 2.0 GHz
4
5
GHz
Gain Bandwidth Product (2)
f
T
V
CE
= 3 V, I
C
= 20 mA, f = 2.0 GHz
10
GHz
Collector Capacitance
C
re
V
CB
= 1 V, I
E
= 0, f = 1.0 MHz
Note 2
0.65
0.8
pF
Notes 1. Pulse Measurement: PW
350
s, Duty cycle
2 %, Pulsed
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
h
FE
Classification
Rank
FB
Marking
T88
h
FE
80 to 160
2SC5194
3
0
50
Ambient Temperature T
A
(C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Free Air
Total Power Dissipation P
T
(mW)
100
150
100
200
0
1
2
3
4
5
6
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Collector Current I
C
(mA)
10
20
30
0
0.5
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 1 V
Collector Current I
C
(mA)
1
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
20
50
100
0.1
1
0.2
2
20
50
5
0.5
Collector Current I
C
(mA)
DC Current Gain h
FE
10
100
100
0
200
V
CE
= 1 V
DC CURENT GAIN vs.
COLLECTOR CURRENT
200 A
180 A
160 A
140 A
120 A
100 A
80 A
60 A
40 A
I
B
= 20 A
0
1
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
V
CE
= 1 V
f = 2 GHz
Gain Bandwidth Product f
T
(GHz)
7
2
3
5
10
1
7
2
3
5
10
5
10
0
5
10
Collector Current I
C
(mA)
INSERTION GAIN vs.
COLLECTOR CURRENT
V
CE
= 1 V
f = 2 GHz
Insertion Power Gain |S
21e
|
2
(dB)
TYPICAL CHARACTERISTICS (T
A
= 25
C)
2SC5194
4
1
Collector Current I
C
(mA)
NOISE FIGURE vs.
COLLECTOR CURRENT
V
CE
= 1 V
f = 2 GHz
Noise Figure NF (dB)
7
20
10
2
3
5
1
2
3
0.1
1
Collector to Base Voltage V
CB
(V)
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
f = 1 MHz
Feed-back Capacitance C
re
(pF)
20
2
5
10
0.5
1.0
0.5
0.1
Frequency f (GHz)
NOISE FIGURE vs. FREQUENCY
Noise Figure NF (dB)
5
0.5
1
2
1.0
1.5
0
0.1
Frequency f (GHz)
MAXIMUM AVAILABLE GAIN/INSERTION
POWER GAIN vs. FREQUENCY
V
CE
= 1 V
I
C
= 5 mA
V
CE
= 1 V
I
C
= 5 mA
5
0.2
0.5
1
10
20
30
Maximum Available Power Gain MAG (dB)
Insertion Power Gain |S
21e
|
2
(dB)
MAG
|S
21e
|
2
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