PRELIMINARY DATA SHEET
1996
Document No. P10938EJ1V0DS00 (1st edition)
Date Published April 1996 P
Printed in Japan
Silicon Transistor
2SC5336
NPN EPITAXIAL SILICON TRANSISTOR
HIGH FREQUENCY LOW DISTORTION AMPLIFIER
FEATURES
PACKAGE DIMENSIONS
High gain
(in millimeters)
| S
21
|
2
= 12 dB TYP, @f = 1 GHz, V
CE
= 10 V, Ic = 20 mA
New power mini-mold package version of a 4-pin type
gain-improved on the 2SC3357
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
V
CBO
20
V
Collector to Emitter Voltage
V
CEO
12
V
Emitter to Base Voltage
V
EBO
3.0
V
Collector Current
I
C
100
mA
Total Power Dissipation
P
T
Note1
1.2
W
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
65 to +150
C
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cutoff Current
I
CB0
V
CB
= 10 V, I
E
= 0
1.0
A
Emitter Cutoff Current
I
EB0
V
EB
= 1 V, I
C
= 0
1.0
A
DC Current Gain
h
FE
V
CE
= 10 V, I
C
= 20 mA
Note2
50
120
250
Gain Bandwidth Product
f
T
V
CE
= 10 V, I
C
= 20 mA
6.5
GHz
Feed-back Capacitance
C
re
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
Note3
0.5
0.8
pF
Insertion Power Gain
| S
21e
|
2
V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
12.0
dB
Noise Figure
NF
V
CE
= 10 V, I
C
= 7 mA, f = 1.0 GHz
1.1
dB
Noise Figure
NF
V
CE
= 10 V, I
C
= 40 mA, f = 1.0 GHz
1.8
3.0
dB
Notes 2. Pulse measurement : PW
350
S, Duty Cycle
2 %
3. Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal.
h
FE
Classification
Rank
RH
RF
RE
Marking
RH
RF
RE
h
FE
50 to 100
80 to 160
125 to
250
4.50.1
1.60.2
2.450.1
3.950.25
1.50.1
0.42
0.06
0.46
0.06
3.0
1.5
0.42
0.06
0.8MIN.
C
E
B
E
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
0.250.02
Note 1. 0.7 mm
16 cm
2
double sided ceramic substrate (Copper plating)
2
2SC5336
TYPICAL CHARACTERISTICS (T
A
= 25
C)
0
50
100
150
1.0
0.3
1
3
5
10
20
30
0.5
1.0
2.0
3.0
5.0
0
1
3
5
10
20 30
50
100
5
10
15
10
0.5
1
5
10
20
50
100
200
50
0.3
1
0.5
1
2
3
5
10
3
5
10
20
30 50
0
0.2
10
20
0.4
0.6 0.8 1.0 1.4
2.0
P
T
- Total Power Dissipation - W
T
A
- Ambient Temperature - C
FEED BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
V
CB
- Collector to Base Voltage - V
C
re
- Feed-back Capacitance - pF
INSERTION GAIN vs.
COLLECTOR CURRENT
I
C
- Collector Current - mA
S
21e
2
- Insertion Power Gain - dB
I
C
- Collector Current - mA
h
FE
- DC Current Gain
f
T
- Gain Bandwidth Product - GH
Z
I
C
- Collector Current - mA
S
21e
2
- Insertion Power Gain - dB
MAG - Maximum Available Power Gain - dB
f - Frequency - GH
Z
S
21e
2
MAG
V
CE
= 10 V
I
C
= 20 mA
DC CURRENT GAIN vs.
COLLECTOR CURRENT
GAIN BAND WIDTH PRODUCT vs.
COLLECTOR CURRENT
INSERTION GAIN .MAXIMUM GAIN vs.
FREQUENCY
V
CE
= 10 V
f = 1 GH
Z
V
CE
= 10 V
f = 1 GH
Z
f = 1.0 MH
Z
V
CE
= 10 V
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Free Air
R
th(ja)
312.5 C/W
Ceramic Substrate
16 cm
2
0.7 mm
2.0
3
2SC5336
I
C
- Collector Current - mA
NF - Noise Figure - dB
V
CE
= 10 V
f = 1 GH
Z
0.5
0
1
2
3
4
5
6
7
1
5
10
50
I
C
- Collector Current - mA
INTERMODULATION DISTORTION vs.
COLLECTOR CURRENT
20
30
40
50
60
70
80
30
40
50
60
70
IM
2
- Intermoduration Distortion - dB
V
CE
= 10 V
V
O
= 100 dB V/50
R
g
= R
e
= 50
IM
2
f = 90 + 100 MH
Z
IM
3
f = 2
200 190 MH
Z
at
IM
3
IM
2
NOISE FIGURE vs. COLLECTOR CURRENT
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