2SC5369
SILICON TRANSISTOR
Document No. P11644EJ1V0DS00 (1st edition)
Date Published September 1996 P
Printed in Japan
FEATURES
High f
T
14 GHz TYP.
High gain
| S
21
e |
2
= 14 dB TYP.
@f = 2 GHz, V
CE
= 3 V, I
C
= 10 mA
NF = 1.3 dB, @f = 2 GHz, V
CE
= 3 V, I
C
= 3 mA
6-pin small mini mold package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
V
CBO
9
V
Collector to Emitter Voltage
V
CEO
6
V
Emitter to Base Voltage
V
EBO
2
V
Collector Current
I
C
30
mA
Total Power Dissipation
P
T
150
mW
Junction Temperature
T
I
150
C
Storage Temperature
T
stg
65 to +150
C
PACKAGE DIMENSION (in mm)
PIN CONNECTIONS
1. Emitter
4. Emitter
2. Emitter
5. Emitter
3. Base
6. Collector
NPN EPITAXIAL SILICON TRANSISTOR FOR
MICROWAVE AMPLIFICATION
1996
PRELIMINARY DATA SHEET
2.10.1
1.250.1
2.00.2
1.3
0.65
0.65
1
2
3
6
5
4
0.2
+0.1
0
0.15
+0.1
0
0 to 0.1
0.90.1
0.7
2SC5369
2
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
= 5 V, I
E
= 0
0.1
A
Emitter Cut-off Current
I
EBO
V
EB
= 1 V, I
C
= 0
0.1
A
DC Current Gain
h
FE
V
CE
= 3 V, I
C
= 10 mA
Note 1
80
160
Gain Bandwidth Product
f
T
V
CE
= 3 V, I
C
= 10 mA, f = 2.0 GHz
14
GHz
Feed-back Capacitance
Cre
V
CB
= 3 V, I
E
= 0, f = 1 MHz
Note 2
0.15
0.25
pF
Insertion Gain
| S
21
e |
2
V
CE
= 3 V, I
C
= 10 mA, f = 2.0 GHz
12
14
dB
Noise Figure
NF
V
CE
= 3 V, I
C
= 3 mA, f = 2.0 GHz
1.3
2.3
dB
STANDARD SPECIFICATION
FB
Marking
T95
h
FE
80 to 160
Notes 1. Pulse measurement: PW
350
s, Duty cycle
2 %, Pulsed
2. Measure by using 3-terminal bridge with emitter pin connected to guard terminal of bridge.
TYPICAL CHARACTERISTICS (T
A
= 25
C)
0
50
100
150
100
200
P
T
- T
A
CHARACTERISTICS
Ambient Temperature T
A
(
C)
Total Power Dissipation P
T
(mW)
0
0.5
1.0
20
40
I
C
- V
BE
CHARACTERISTICS
DC Base Voltage V
BE
(V)
Collector Current I
C
(mA)
V
CE
= 3 V
10
30
50
0
2
6
8
10
30
I
C
- V
CE
CHARACTERISTICS
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
10
10
50
50
200
h
FE
- I
C
CHARACTERISTICS
Collector Current I
C
(mA)
DC Current Gain h
FE
V
CE
= 3 V
20
500
20
4
I
e
= 200 A
180 A
160 A
140 A
120 A
100 A
80 A
60 A
40 A
20 A
100
1
2
5
20