1997
PRELIMINARY DATA SHEET
FEATURE
High f
T
17 GHz TYP.
High gain
|S
21e
|
2
= 15.5 dB TYP.
@f = 2 GHz, V
CE
= 2 V, I
C
= 7 mA
NF = 1.1 dB, @f = 2 GHz V
CE
= 2 V, I
C
= 1 mA
6-pin Small Mini Mold Package
ORDERING INFORMATION
PART NUMBER
QUANTITY
PACKING STYLE
2SC5408-T1
3 kpcs/reel
8-mm wide emboss taping, 6-pin
(collector) feed hole direction
Remark
To order evaluation samples, consult your NEC sales person-
nel (supported in 50-pcs units).
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
V
CBO
5
V
Collector to Emitter Voltage
V
CEO
3
V
Emitter to Base Voltage
V
EBO
2
V
Collector Current
I
C
10
mA
Total Power Dissipation
P
T
30
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
65 to +150
C
SILICON TRANSISTOR
2SC5408
NPN EPITAXIAL SILICON TRANSISTOR
FOR MICROWAVE HIGH-GAIN AMPLIFICATION
Document No. P12095EJ1V0DS00 (1st edition)
Date Published April 1997 N
Printed in Japan
2.10.1
1.250.1
2.00.2
0.90.1
0.7
1.3
B
0 to 0.1
EE
C
EE
0.65
0.65
+0.1
0
0.2
+0.1
0
0.15
T1E
PACKAGE DIMENSIONS (in mm)
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
Because this product uses high-frequency process, avoid excessive input of static electricity, etc.
2SC5408
2
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
= 5 V, I
E
= 0
0.1
A
Emitter Cut-off Current
I
EBO
V
EB
= 1 V, I
C
= 0
0.1
A
DC Current Gain
h
FE
V
CE
= 2 V, I
C
= 7 mA
Note 1
70
140
Gain Bandwidth Product
f
T
V
CE
= 2 V, I
C
= 7 mA, f = 2.0 GHz
17
GHz
Feed-back Capacitance
Cre
V
CB
= 2 V, I
E
= 0, f = 1 MHz
Note 2
0.1
0.15
pF
Insertion Power Gain
|S
21e
|
2
V
CE
= 2 V, I
C
= 7 mA, f = 2.0 GHz
13
15.5
dB
Noise Figure
NF
V
CE
= 2 V, I
C
= 1 mA, f = 2.0 GHz
1.1
1.8
dB
Rank
FB
Marking
T1E
h
FE
70 to 40
Notes 1. Pulse measurement PW
350
s, duty cycle
2 %, pulsed
2. Measured with three-pin bridge, with emitter pin connected to the bridge guard.
TYPICAL CHARACTERISTICS (T
A
= 25
C)
200
100
0
25
20
200 A
180 A
160 A
140 A
120 A
100 A
80 A
60 A
40 A
15
10
5
0
50
1.0
2.0
3.0
100
150
50
40
30
20
10
0
0.5
1.0
T
A
- Ambient Temperature - C
30 mW
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
COLLECTOR CURRENT
vs. BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT
vs. COLLECTOR TO EMITTER VOLTAGE
V
BE
- Base to Emitter Voltage - V
I
C
- Collector Current - mA
V
CE
- Collector to Emitter Voltage - V
I
C
- Collector Current - mA
P
T
- Total Power Dissipation - mW
V
CE
=
2 V
I
B
=
20 A
1
500
100
50
20
10
200
2
5
10
20
50
100
DC CURRENT GAIN vs.
COLLECTOR CURRENT
I
C
- Collector Current - mA
h
FE
- DC Current Gain
V
CE
=
1 V
V
CE
=
2 V
2SC5408
3
20
10
0
4
3
2
1
0
0.3
18
16
14
12
10
8
6
4
2
0
0.2
0.1
0
40
30
20
10
0
1
10
100
1
10
100
1
10
0.1
0.5
1.0
2.0
2.6
100
1
10
100
I
C
- Collector Current - mA
I
C
- Collector Current - mA
V
CB
- Collector to Base Voltage - V
I
C
- Collector Current - mA
|S
21e
|
2
vs. I
C
characteristics
f
T
vs. I
C
characteristics
NF vs. I
C
characteristics
C
re
vs. V
CB
NF - Noise Figure - dB
C
re
- Feed-back Capacitance - pF
|S
21e
|
2
- Insertion Power Gain - dB
|S
21e
|
2
- Insertion Power Gain - dB
|S
21e
|
2
vs. f characteristics
f - Frequency - GHz
f
T
- Gain Bandwidth Product - GHz
V
CE
= 2 V
f = 2 GHz
V
CE
= 2 V
f = 2 GHz
V
CE
= 2 V
f = 2 GHz
f = 1 MHz
V
CE
= 2 V
I
C
= 7 mA
I
C
= 1 mA
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