1998
PRELIMINARY DATA SHEET
FEATURE
Ultra super mini-mold thin flat package
(1.4 mm
0.8 mm
0.59 mm: TYP.)
Contains same chip as 2SC5186
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
V
CBO
5
V
Collector to Emitter Voltage
V
CEO
3
V
Emitter to Base Voltage
V
EBO
2
V
Collector Current
I
C
30
mA
Total Power Dissipation
P
T
90
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
65 to +150
C
SILICON TRANSISTOR
2SC5436
NPN EPITAXIAL SILICON TRANSISTOR
ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY
LOW-NOISE AMPLIFICATION
Document No. P13079EJ1V0DS00 (1st edition)
Date Published February 1998 N CP(K)
Printed in Japan
PACKAGE DIMENSIONS (in mm)
1.4 0.05
0.8 0.1
1.4 0.1
0.59 0.05
(0.9)
0.45
0.45
+0.1
0
0.3
+0.1
0.05
0.15
+0.1
0
0.2
1
3
2
T N
PIN CONNECTIONS
1: Emitter
2: Base
3: Collector
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
= 5 V, I
E
= 0
100
nA
Emitter Cut-off Current
I
EBO
V
EB
= 1 V, I
C
= 0
100
nA
DC Current Gain
h
FE
V
CE
= 2 V, I
C
= 20 mA
Note 1
70
130
Reverse Transfer Capacitance
C
re
V
CB
= 2 V, I
E
= 0, f = 1 MHz
Note 2
0.4
0.8
pF
Gain Bandwidth Product (1)
f
T
(1)
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
9.0
14.0
GHz
Gain Bandwidth Product (2)
f
T
(2)
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
7.0
12.0
GHz
Insertion Power Gain (1)
|S
21e
|
2
(1)
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
8.5
10.0
dB
Insertion Power Gain (2)
|S
21e
|
2
(2)
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
6.0
9.0
dB
Noise Figure (1)
NF (1)
V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
1.4
2.0
dB
Noise Figure (2)
NF (2)
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
1.4
2.0
dB
Notes 1. Pulse measurement P
W
350
s, duty cycle
2 %
2. Collector to base capacitance measured by capacitance meter (automatic balance bridge method) when
emitter pin is connected to the guard pin.
Because this product uses high-frequency process, avoid excessive input of static electricity, etc.
The information in this document is subject to change without notice.
2SC5436
2
Preliminary Data Sheet
h
FE
CLASSIFICATION
RANK
EB
FB
Marking
TN
TP
h
FE
75 to 100
90 to 130
TYPICAL CHARACTERISTICS (T
A
= 25
C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
T
A
- Ambient Temperature - C
P
T
- Total Power Dissipation - mW
0
COLLECTOR CURRENT vs. DC BASE VOLTAGE
V
BE
- DC Base Voltage - V
V
CE
= 2 V
I
C
- Collector Current - mA
0.5
1.0
50
90 mW
100
200
100
150
20
10
40
30
50
0
Free Air
2SC5436
3
Preliminary Data Sheet
NOISE FIGURE vs. COLLECTOR CURRENT
I
C
- Collector Current - mA
NF - Noise Figure - dB
1
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
V
CB
- Collector to Base Voltage - V
C
re
- Reverse Transfer Capacitance - pF
2
1
2
3
3
5
7 10
20
30
1
10.0
20.0
1.00
1 V
2 V
f = 1 MHz
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
I
C
- Collector Current - mA
fT - Gain Bandwidth Product - GHz
1
I
C
- Collector Current - mA
|S
21e
|
2
- Insertion Power Gain - dB
0
1
2
3
5
7
10
20
30
5
10
5
10
15
f = 2 GHz
2
3
5
7
10
20
30
2 V
1 V
2 V
1 V
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
f = 2 GHz
f = 2 GHz
0.10
200 A
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
V
CE
- Collector to Emitter Voltage - V
I
C
- Collector Current - mA
0
20
15
10
5
25
1.0
2.0
3.0
180 A
160 A
140 A
120 A
100 A
80 A
60 A
40 A
I
B
= 20 A
I
C
- Collector Current - mA
DC Current Gain - h
FE
DC CURRENT GAIN vs. COLLECTOR CURRENT
500
200
100
10
20
50
V
CE
= 2 V
V
CE
= 1 V
1
2
5
10
20
50
100
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