1998
PRELIMINARY DATA SHEET
FEATURE
Ideal for medium-output applications
High gain, low noise
Small reverse transfer capacitance
Can operate at low voltage
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
V
CBO
9
V
Collector to Emitter Voltage
V
CEO
6
V
Emitter to Base Voltage
V
EBO
2
V
Collector Current
I
C
100
mA
Total Power Dissipation
P
T
200
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
65 to +150
C
SILICON TRANSISTOR
2SC5455
NPN EPITAXIAL SILICON TRANSISTOR
4-PIN MINI MOLD
Document No. P13081EJ1V0DS00 (1st edition)
Date Published February 1998 N CP(K)
Printed in Japan
PACKAGE DIMENSIONS (in mm)
5
5
5
5
0
to 0.1
0.8
2.9 0.2
(1.8)
(1.9)
0.95
0.85
1.1
+0.2
0.1
0.16
+0.1
0.06
0.4
4
1
3
2
+0.1
0.05
2.8
+0.2
0.3
1.5
+0.2
0.1
0.6
+0.1
0.05
0.4
+0.1
0.05
0.4
+0.1
0.05
PIN CONNECTIONS
1: Collector
2: Emitter
3: Base
4: Emitter
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
= 5 V, I
E
= 0
0.1
A
Emitter Cut-off Current
I
EBO
V
EB
= 1 V, I
C
= 0
0.1
A
DC Current Gain
h
FE
V
CE
= 3 V, I
C
= 30 mA
Note 1
75
150
Gain Bandwidth Product
f
T
V
CE
= 3 V, I
C
= 30 mA, f = 2 GHz
12.0
GHz
Reverse Transfer Capacitance
C
re
V
CB
= 3 V, I
E
= 0, f = 1 MHz
Note 2
0.5
0.7
pF
Insertion Power Gain
|S
21e
|
2
V
CE
= 3 V, I
C
= 30 mA, f = 2 GHz
8.0
10.0
dB
Noise Figure
NF
V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz
1.5
2.5
dB
Notes 1. Pulse measurement P
W
350
s, duty cycle
2 %
2. Collector to base capacitance measured by capacitance meter (automatic balance bridge method) when
emitter pin is connected to the guard pin.
Because this product uses high-frequency process, avoid excessive input of static electricity, etc.
The information in this document is subject to change without notice.
2SC5455
2
Preliminary Data Sheet
h
FE
CLASSIFICATION
RANK
FB
Marking
R55
h
FE
75 to 150
TYPICAL CHARACTERISTICS (T
A
= 25
C)
I
C
- Collector Current - mA
0
25
50
60
1.0
0.5
V
BE
- DC Base Voltage - V
P
T
- Total Power Dissipation - mW
0
T
A
- Ambient Temperature - C
150
100
50
100
200
DC Current Gain - h
FE
200
100
50
I
C
- Collector Current - mA
DC CURRENT GAIN vs. COLLECTOR CURRENT
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
I
C
- Collector Current - mA
0
1
2
3
4
5
6
7
V
CE
- Collector to Emitter Voltage - V
40
35
30
25
20
15
10
5
Free Air
200 A
160 A
140 A
120 A
80 A
60 A
I
B
= 20 A
20
10
0.1 0.2
0.5
1
2
5
100
0
V
CE
= 3 V
V
CE
= 3 V
180 A
40 A
100 A
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
COLLECTOR CURRENT vs. DC BASE VOLTAGE
2SC5455
3
Preliminary Data Sheet
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
f
T
- Gain Bandwidth Product - GHz
100
20
50
5
1
2
10
10
12
14
16
8
6
4
2
0
V
CE
= 3 V
f = 2 GHz
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
|S
21e
|
2
- Insertion Power Gain - dB
100
20
50
5
1
2
10
0
10
12
14
16
8
6
4
2
V
CE
= 3 V
f = 2 GHz
I
C
- Collector Current - mA
I
C
- Collector Current - mA
1
1
10
100
1
0.8
0.6
0.4
0.2
0
10
100
f = 1 MH
Z
V
CE
= 3 V
f = 2 GHz
16
14
12
10
8
6
4
2
0
G
a
NF
I
C
- Collector Current - mA
G
a
- Gain with Minimum NF - dB
NF - Noise Figure - dB
GAIN WITH MINIMUM NF/NOISE FIGURE
vs. COLLECTOR CURRENT
C
re
- Reverse Transfer Capacitance - pF
V
CB
- Collector to Base Voltage - V
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
2SC5455
4
Preliminary Data Sheet
20
16
10
4
30
0.1
20
10
0
1
10
MAG
24
20
16
12
8
4
0
4
8
10
16
0
4
V
CE
= 3 V
I
Q
= 5 mA
f = 1 GHz
V
CE
= 3 V
I
C
= 30 mA
|S
21e
|
2
20 16
10
4
24
20
16
12
8
4
0
4
8
10
16
0
4
V
CE
= 3 V
I
Q
= 5 mA
f = 2 GHz
MSG
f - Frequency - GHz
OUTPUT POWER vs. INPUT POWER
P
OUT
- Output Power - dB
P
IN
- Input Power - dB
P
OUT
- Output Power - dB
P
IN
- Input Power - dB
OUTPUT POWER vs. INPUT POWER
MAG - Maximum Available Gain - dB
MSG - Maximum Stable Gain - dB
|S
21e
|
2
- Insertion Power Gain - dB
MAXIMUM AVAILABLE GAIN/
MAXIMUM STABLE GAIN/INSERTION
POWER GAIN vs. FREQUENCY
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