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Электронный компонент: 2SC5509

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DATA SHEET
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
NPN SILICON RF TRANSISTOR
2SC5509
NPN SILICON RF TRANSISTOR FOR
MEDIUM OUTPUT POWER



LOW NOISE



HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD
Document No. PU10009EJ01V0DS (1st edition)
Date Published October 2001 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 2001
FEATURES
Ideal for medium output power amplification
NF = 1.2 dB TYP., G
a
= 12 dB TYP. @ V
CE
= 2 V, I
C
= 10 mA, f = 2 GHz
Maximum available power gain: MAG = 14 dB TYP. @ V
CE
= 2 V, I
C
= 50 mA, f = 2 GHz
f
T
= 25 GHz technology adopted
Flat-lead 4-pin thin-type super minimold package
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC5509
50 pcs (Non reel)
8 mm wide embossed taping
2SC5509-T2
3 kpcs/reel
Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25



C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
V
CBO
15
V
Collector to Emitter Voltage
V
CEO
3.3
V
Emitter to Base Voltage
V
EBO
1.5
V
Collector Current
I
C
100
mA
Total Power Dissipation
P
tot
Note
190
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
-
65 to +150
C
Note Free Air
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
Data Sheet PU10009EJ01V0DS
2
2SC5509
THERMAL RESISTANCE
Parameter
Symbol
Ratings
Unit
Junction to Case Resistance
R
th j-c
95
C/W
Junction to Ambient Resistance
R
th j-a
650
C/W
ELECTRICAL CHARACTERISTICS (T
A
= +25



C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
I
CBO
V
CB
= 5 V, I
E
= 0 mA
-
-
600
nA
Emitter Cut-off Current
I
EBO
V
BE
= 1 V, I
C
= 0 mA
-
-
600
nA
DC Current Gain
h
FE
Note 1
V
CE
= 2 V, I
C
= 10 mA
50
70
100
-
RF Characteristics
Gain Bandwidth Product
f
T
V
CE
= 3 V, I
C
= 90 mA, f = 2 GHz
13
15
-
GHz
Insertion Power Gain
S
21e
2
V
CE
= 2 V, I
C
= 50 mA, f = 2 GHz
8
11
-
dB
Noise Figure
NF
V
CE
= 2 , I
C
= 10 mA, f = 2 Hz,
Z
S
= Z
opt
1.2
1.7
dB
Reverse Transfer Capacitance
C
re
Note 2
V
CB
= 2 V, I
E
= 0 mA, f = 1 MHz
-
0.5
0.75
pF
Maximum Available Power Gain
MAG
Note 3
V
CE
= 2 V, I
C
= 50 mA, f = 2 GHz
-
14
-
dB
Maximum Stable Power Gain
MSG
Note 4
V
CE
= 2 V, I
C
= 50 mA, f = 2 GHz
-
15
-
dB
Gain 1 dB Compression Output Power
P
O (1 dB)
V
CE
= 2 V, I
C
= 70 mA
Note 5
, f = 2 GHz
-
17
-
dBm
3rd Order Intermodulation Distortion
Output Intercept Point
OIP
3
V
CE
= 2 V, I
C
= 70 mA
Note 5
, f = 2 GHz
-
27
-
dBm
Notes 1. Pulse measurement: PW
350
s, Duty Cycle
2%
2. Collector to base capacitance when the emitter grounded
3. MAG =
4. MSG =
5. Collector current when P
O (1 dB)
is output
h
FE
CLASSIFICATION
Rank
FB
Marking
T80
h
FE
Value
50 to 100
(K



(K
2
1) )
S
21
S
12
S
21
S
12
Data Sheet PU10009EJ01V0DS
3
2SC5509
TYPICAL CHARACTERISTICS (Unless otherwise specified, T
A
= +25



C)
Thermal/DC Characteristics
V
CE
= 2 V
Collector Current I
C
(mA)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
40
30
20
10
0
0.4
0.2
0.6
0.8
1.0
1.2
400
350
300
250
200
150
190
330
100
50
0
25
50
75
100
125
150
Total Power Dissipation P
tot
(mW)
Ambient Temperature T
A
(C), Case Temperature T
C
(C)
TOTAL POWER DISSIPATION vs. AMBIENT
TEMPERATURE, CASE TEMPERATURE
When case temperature
is specified
Mounted on
ceramic substrate
(15
15 mm, t = 0.6 mm)
Free Air
200
100
150
50
0
0.01
0.1
0.001
1
10
100
DC Current Gain h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 2 V
Collector Current I
C
(mA)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
150
50
100
0
2
1
4
3
5
200 A
100 A
300 A
400 A
500 A
600 A
700 A
800 A
900 A
1 000 A
I
B
= 1 100 A
Capacitance/f
T
Characteristics
f = 1 MHz
Reverse Transfer Capacitance C
re
(pF)
Collector to Base Voltage V
CB
(V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
1.00
0.60
0.80
0.20
0.40
0
1.0
3.0
4.0
2.0
5.0
V
CE
= 3 V
f = 2 GHz
Gain Bandwidth Product f
T
(GHz)
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
30
25
20
15
10
5
0
10
100
1
1 000
Data Sheet PU10009EJ01V0DS
4
2SC5509
Gain Characteristics
V
CE
= 2 V
I
C
= 50 mA
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
40
35
20
25
30
5
10
15
0
0.1
1.0
10.0
MAG
MSG
|S
21e
|
2
V
CE
= 2 V
f = 2 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
25
20
15
10
5
0
1
10
100
MAG
MSG
|S
21e
|
2
V
CE
= 2 V
f = 1 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
15
20
25
10
5
0
1
10
100
MAG
MSG
|S
21e
|
2
Output Characteristics
V
CE
= 2 V
f = 1 GHz
25
20
15
10
5
0
5
150
25
50
75
125
100
0
15
0
5
10
5
10
15
Input Power P
in
(dBm)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
Output Power P
out
(dBm)
Collector Current I
C
(mA)
P
out
I
C
V
CE
= 2 V
f = 2 GHz
25
20
15
10
5
0
5
150
25
50
75
125
100
0
15
0
5
10
5
10
15
Input Power P
in
(dBm)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
Output Power P
out
(dBm)
Collector Current I
C
(mA)
P
out
I
C
Data Sheet PU10009EJ01V0DS
5
2SC5509
Noise Characteristics
6.0
0.0
5.0
4.0
3.0
2.0
1.0
30
25
20
15
10
5
0
1
10
100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 2 V
f = 1 GHz
NF
G
a
6.0
0.0
5.0
4.0
3.0
2.0
1.0
30
25
20
15
10
5
0
1
10
100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 2 V
f = 1.5 GHz
NF
G
a
6.0
0.0
5.0
4.0
3.0
2.0
1.0
30
25
20
15
10
5
0
1
10
100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 2 V
f = 2 GHz
NF
G
a
6.0
0.0
5.0
4.0
3.0
2.0
1.0
30
25
20
15
10
5
0
1
10
100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 2 V
f = 2.5 GHz
NF
G
a
Remark The graphs indicate nominal characteristics.