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Электронный компонент: 2SD1615

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SILICON TRANSISTORS
2SD1615, 2SD1615A
Document No. D10198EJ3V0DSD0 (3rd edition)
(Previous No. TC-5810A)
Date Published June 1995 P
Printed in Japan
NPN SILICON EPITAXIAL TRANSISTORS
POWER MINI MOLD
DESCRIPTION
2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially
in Hybrid Integrated Circuits.
FEATURES
World Standard Miniature Package
Low V
CE (sat)
V
CE(sat)
= 0.15 V
Complement to 2SB1115, 2SD1115A
ABSOLUTE MAXIMUM RATINGS
Maximum Voltages and Currents (T
A
= 25 C)
2SD1615
2SD1615A
Collector to Base Voltage
V
CBO
60
120
V
Collector to Emitter Voltage
V
CEO
50
60
V
Emitter to Base Voltage
V
EBO
6
A
Collector Current (DC)
I
C
1
A
Collector Current (Pulse)*
I
C
2
A
Maximum Power Dissipation
Total Power Dissipation
at 25 C Ambient Temperature** P
T
2.0
W
Maximum Temperatures
Junction Temperature
T
j
150
C
Storage Temperature Range
T
stg
55 to +150
C
* PW
10 ms, Duty Cycle
50 %
** When mounted on ceramic substrate of 16 cm
2
0.7 mm
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
I
CBO
100
nA
2SD1615
V
CB
= 60 V, I
E
= 0
100
nA
2SD1615A
V
CB
= 120 V, I
E
= 0
Emitter Cutoff Current
I
EBO
100
nA
V
EB
= 6.0 V, I
C
= 0
DC Current Gain
h
FE1
***
135
290
600
2SC1615
V
CE
= 2.0 V, I
C
= 100 mA
135
400
2SD1615A
DC Current Gain
h
FE2
***
81
270
V
CE
= 2.0 V, I
C
= 1.0 A
Collector Saturation Voltage
V
CE(sat)
***
0.15
0.3
V
I
C
= 1.0 A, I
B
= 50 mA
Base Saturation Voltage
V
BE(sat)
***
0.9
1.2
V
I
C
= 1.0 A, I
B
= 50 mA
Base to Emitter Voltage
V
BE
***
600
700
mV
V
CE
= 2.0 V, I
C
= 50 mA
Gain Bandwidth Product
f
T
80
160
MHz
V
CE
= 2.0 V, I
E
= 100 mA
Output Capacitance
C
ob
19
pF
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
*** Pulsed: PW
350
s, Duty Cycle
2 %
h
FE
Classification
MARKING
2SD1615
GM
GL
GK
2SD1615A
GQ
GP
h
FE
135 to 270
200 to 400
300 to 600
1985
DATA SHEET
C
E
B
4.5 0.1
1.6 0.2
0.42 0.06
0.42
0.06
1.5 0.1
2.5

0.1
0.8 MIN.
4.0

0.25
1.5
3.0
0.41
+ 0.03
0.05
1. Emitter
2. Collector
3. Base
0.47
0.06
PACKAGE DIMENSIONS
in millimeters
2
2SD1615, 2SD1615A
TYPICAL CHARACTERISTICS (T
A
= 25 C)
When mounted on ceramic substrate of 16 cm
2
0.7 mm
without heatsink
T
A
Ambient Temperature C
0
40
80
120
160
200
2.5
2.0
1.5
1.0
0.5
P
T
T
otal Power Dissipation W
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
100
80
60
40
20
0
2
4
6
8
10
300 A
200 A
200 A
150 A
100 A
I
B
= 50 A
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
Collector to Emitter Voltage V
I
C
Collector Current mA
1000
500
200
100
50
20
10
5
0.01 0.02
0.05 0.1 0.2
0.5
1
2
5
10
I
C
Collector Current A
DC CURRENT GAIN vs.
COLLECTOR CURRENT
h
EF
DC Current Gain
V
CE
=
2.0 V
1.0
0.8
0.6
0.4
0.2
0
0.2
0.4
0.6
0.8
1.0
3.0 mA
2.5 mA
2.0 mA
1.5 mA
1.0 mA
I
B
= 0.5 mA
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
V
CE(sat)
Collector Saturation Voltage V
I
C
Collector Current A
2
1
0.5
0.2
0.1
0.05
0.02
0.01 0.02
0.05 0.1 0.2
0.5
1
2
5
10
I
C
Collector Current A
COLLECTOR AND BASE SATURATION
VOLTAGE vs. COLLECTOR CURRENT
V
CE(sat)
Collector Saturation V
oltage V
V
BE(sat)
Base Saturation V
oltage V
3.5 mA
4.0 mA
5.0 mA
4.5 mA
I
C
=
20I
B
V
CE(sat)
V
BE(sat)
SAFE OPERATING AREA
(TRANSIENT THERMAL RESISTANCE
METHOD)
1 pulse
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
1
2
5
10
20
50
100
V
CE
Collector to Emitter Voltage V
I
C
Collector Current A
2SD1615A
PW=1 ms
10 ms
200 ms
DC
2SD1615
2SD1615, 2SD1615A
3
0.01 0.02
0.05 0.1 0.2
0.5
1
2
5
10
1
2
5
10
20
50
100
200
500
1000
GAIN BANDWIDTH PRODUCT vs.
EMITTER CURRENT
f
T
Gain Bandwidth Product MH
Z
I
C
Collector Current A
V
EC
=
2.0 V
1
2
5
10
20
50
100
2
5
10
20
50
100
OUTPUT CAPCITANCE vs.
COLLECTOR TO BASE VOLTAGE
C
ob
Output Capacitance pF
V
CB
Collector to Base Voltage V
I
E
=
0
f
=
1.0 MH
Z
0.01 0.02
0.05
0.1
0.2
0.5
1
I
C
Collector Current A
0.05
0.1
0.2
0.5
1
2
SWITCHING TIME vs.
COLLECTOR CURRENT
t Switching Time
s
V
CC
= 10 V
I
C
= 10.I
BI
= 10.I
B2
V
BE(off)
= 2 to 3 V
PW = 2 s
Duty Cycle
2 %
..
t
f
t
on
t
stg
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system.
TEI-1202
Quality grade on NEC semiconductor devices.
IEI-1209
Semiconductor device mounting technology manual.
IEI-1207
Semiconductor device package manual.
IEI-1213
Guide to quality assurance for semiconductor devices.
MEI-1202
Semiconductor selection guide.
MF-1134
2SD1615, 2SD1615A
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special:
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11