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1998
Document No. D14863EJ3V0DS00 (3rd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SD560
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
2002
The 2SD560 is a mold power transistor developed for low-
frequency power amplifiers and low-speed switching. This transistor is
ideal for direct driving from the IC output of devices such as pulse
motor drivers and relay drivers, and PC terminals.
FEATURES
C-to-E reverse diode inserted
Low collector saturation voltage
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
V
CBO
150
V
Collector to emitter voltage
V
CEO
100
V
Emitter to base voltage
V
EBO
7.0
V
Collector current (DC)
I
C(DC)
5.0
A
Collector current (pulse)
I
C(pulse)
PW
10 ms,
duty cycle
50%
8.0
A
Base current (DC)
I
B(DC)
0.5
A
T
C
= 25
C
30
W
Total power dissipation
P
T
T
A
= 25
C
1.5
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
ORDERING INFORMATION
Ordering Name
Package
2SD560
TO-220AB
(TO-220AB)
INTERNAL EQUIVALENT CIRCUIT
1. Base
2. Collector
3. Emitter
Data Sheet D14863EJ3V0DS
2
2SD560
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
= 100 V, I
E
= 0 A
1.0
A
h
FE1
V
CE
= 2.0 V, I
C
= 3.0 A
Note
2,000
6,000
15,000
DC current gain
h
FE2
V
CE
= 2.0 V, I
C
= 5.0 A
Note
500
Collector saturation voltage
V
CE(sat)
I
C
= 3.0 A, I
B
= 3.0 mA
Note
0.9
1.5
V
Base saturation voltage
V
BE(sat)
I
C
= 3.0 A, I
B
= 3.0 mA
Note
1.6
2.0
V
Turn-on time
t
on
1.0
s
Storage time
t
stg
3.5
s
Fall time
t
f
I
C
= 3.0 A, R
L
= 16.7
,
I
B1
=
-I
B2
= 3.0 mA, V
CC
50 V
Refer to the test circuit.
1.2
s
Note Pulse test PW
350
s, duty cycle 2%
h
FE
CLASSIFICATION
Marking
MB
LB
KB
h
FE1
2,000 to 5,000
3,000 to 7,000
5,000 to 15,000
SWITCHING TIME (t
on
, t
stg
, t
f
) TEST CIRCUIT
Base current
waveform
Collector current
waveform
Data Sheet D14863EJ3V0DS
3
2SD560
TYPICAL CHARACTERISTICS (T
A
= 25
C)
T
o
t
a
l
P
o
w
e
r
Di
s
s
i
pa
t
i
on
P
T
(W)
Temperature T (
C)
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Col
l
e
c
t
or Current
I
C
(
A
)
B
a
s
e
S
a
t
u
ra
t
i
on V
o
l
t
age
V
BE(sa
t
)
(
V
)
Col
l
e
c
t
or S
a
t
u
ra
t
i
on V
o
l
t
age
V
CE
(
s
a
t
)
(V
)
Collector Current I
C
(A)
Col
l
e
c
t
or Current
I
C
(
A
)
Without heatsink
Single pulse
Pulse test
Pulse test
With infinite heatsink (Tc = 25
C)
Heatsink': 2.0 mm
Aluminum, bpard
No insulating boad
Silicon brease coating
Horizontal level
Collector Current I
C
(A)
DC Current
Gai
n
h
FE
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