The information in this document is subject to change without notice.
1998
MOS FIELD EFFECT TRANSISTOR
2SJ492
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
D11264EJ1V0DS00 (1st edition)
Date Published
December 1998 NS CP(K)
Printed in Japan
DESCRIPTION
This product is P-Channel MOS Field Effect Transistor
designed for DC/DC converters and motor/lamp driver
circuits.
FEATURES
Low on-state resistance
R
DS(on)1
= 100 m
(MAX.) (V
GS
= 10 V, I
D
= 10 A)
R
DS(on)2
= 185 m
(MAX.) (V
GS
= 4 V, I
D
= 10 A)
Low C
iss
: C
iss
= 1210 pF (TYP.)
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
60
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS(AC)
#
20
V
Gate to Source Voltage (V
DS
= 0 V)
Note1
V
GSS(DC)
20, 0
V
Drain Current (DC)
I
D(DC)
#
20
A
Drain Current (pulse)
Note2
I
D(pulse)
#
80
A
Total Power Dissipation (T
A
= 25C)
P
T
1.5
W
Total Power Dissipation (T
C
= 25C)
P
T
70
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Single Avalanche Current
Note3
I
AS
20
A
Single Avalanche Energy
Note3
E
AS
40
mJ
Notes 1. f = 20
kHz, Duty Cycle
10% (+Side)
2. PW
10
s, Duty Cycle
1 %
3. Starting T
ch
= 25
C, R
A
= 25
, V
GS
= 20
V
0
THERMAL RESISTANCE
Channel to Case
R
th(ch-C)
1.79
C/W
Channel to Ambient
R
th(ch-A)
83.3
C/W
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ492
TO-220AB
2SJ492-S
TO-262
2SJ492-ZJ
TO-263
Data Sheet D11264EJ1V0DS00
2
2SJ492
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10
V, I
D
= 10
A
70
100
m
R
DS(on)2
V
GS
= 4
V, I
D
= 10
A
120
185
m
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
= 10
V, I
D
= 1
mA
1.0
1.5
2.0
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 10 A
5.0
12
S
Drain Leakage Current
I
DSS
V
DS
= 60
V, V
GS
= 0
V
10
A
Gate to Source Leakage Current
I
GSS
V
GS
=
#
20
V, V
DS
= 0
V
#
10
A
Input Capacitance
C
iss
V
DS
= 10
V
1210
pF
Output Capacitance
C
oss
V
GS
= 0
V
520
pF
Reverse Transfer Capacitance
C
rss
f = 1
MHz
180
pF
Turn-on Delay Time
t
d(on)
I
D
= 10
A
16
ns
Rise Time
t
r
V
GS(on)
= 10
V
140
ns
Turn-off Delay Time
t
d(off)
V
DD
= 30
V
90
ns
Fall Time
t
f
R
G
= 10
80
ns
Total Gate Charge
Q
G
I
D
= 20
A
42
nC
Gate to Source Charge
Q
GS
V
DD
= 48
V
8.0
nC
Gate to Drain Charge
Q
GD
V
GS
= 10
V
10
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 20
A, V
GS
= 0
V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 20
A, V
GS
= 0
V
125
ns
Reverse Recovery Charge
Q
rr
di/dt = 50
A
/
s
280
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
PG
L
V
DD
V
GS
= 20
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
90 %
V
GS(on)
90 %
t
d(off)
t
f
10 %
I
D
t
off
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1 %
V
GS
Wave Form
I
D
Wave Form
V
GS
10 %
10 %
0
I
D
90 %
t
d(on)
t
r
R
G
= 10
0
t
on
Data Sheet D11264EJ1V0DS00
3
2SJ492
TYPICAL CHARACTERISTICS (T
A
= 25 C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
C
- Case Temperature -
C
dT - Percentage of Rated Power - %
0
20
40
60
80
100
120
140
160
20
40
60
80
100
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
T
C
- Case Temperature -
C
P
T
- Total Power Dissipation - W
0
20
40
60
80
100
120
140
160
35
30
25
20
15
10
5
FORWARD BIAS SAFE OPERATING AREA
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
-
1
-
0.1
-
10
-
100
-
1000
-
1
-
10
-
100
T
C
= 25C
Single Pulse
1 ms
10 ms
I
D(pulse)
R
DS(on)
Limited
(at V
GS
=10 V)
100
s
Power Dissipation Limited
DC
I
D(DC)
P
w
= 10
s
100ms
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
0
-
8
-
12
-
16
-
80
-
100
-
4
Pulsed
V
GS
=
-
10 V
-
60
-
40
-
20
-
4 V
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
-
1
-
10
-
100
-
1000
Pulsed
0
-
5
-
10
T
ch
=
-
25C
25C
125C
-
15
V
DS
=
-
10 V
-
20
Data Sheet D11264EJ1V0DS00
4
2SJ492
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
th(t)
- Transient Thermal Resistance - C/
W
10
0.001
0.01
0.1
1
100
1000
1 m
10 m
100 m
1
10
100
1000
10
100
Single Pulse
R
th(ch-c)
= 1.79 C/W
R
th(ch-a)
= 83.3 C/W
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
|
y
fs
| - Forward Transfer Admittance - S
V
DS
=
-
10 V
Pulsed
-
0.1
-
1.0
1
10
100
-
10
-
100
0.1
T
ch
=
-
25C
25C
75C
125C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-State Resistance -
0
-
5
0.1
-
10
-
15
Pulsed
0.3
0.2
I
D
=
-
10 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-State Resistance -
0.10
-
1
0.15
-
10
-
100
Pulsed
0
V
GS
=
-
10 V
V
GS
=
-
4 V
0.05
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(off)
- Gate to Source Cutoff Voltage - V
V
DS
=
-
10 V
I
D
=
-
1 mA
-
50
0
50
100
150
0
-
1.0
-
2.0
-
1.5
-
0.5
Data Sheet D11264EJ1V0DS00
5
2SJ492
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
R
DS(on)
- Drain to Source On-State Resistance -
0
-
50
0.06
0
50
100
150
I
D
=
-
10 A
0.12
0.24
0.18
V
GS
=
-
4 V
-
10 V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - V
I
SD
- Diode Forward Current - A
-
0.1
0
-
1
-
10
-
100
1
Pulsed
2
3
V
GS
=
-
4 V
V
GS
= 0 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
Ciss, Coss, Crss - Capacitance - pF
10
-
0.1
100
1000
10000
-
1
-
10
-
100
V
GS
= 0
f = 1 MHz
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
1.0
-
0.1
10
100
1000
-
1
-
10
-
100
V
DD
=
-
30 V
V
GS
=
-
10 V
R
G
= 10
t
d(off)
t
d(on)
t
r
t
f
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
F
- Diode Current - A
t
rr
- Reverse Recovery Time - ns
di/dt = 50 A /
V
GS
= 0
s
1
-
0.1
10
-
1
-
10
-
100
1000
100
V
GS
- Gate to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
20
40
60
80
-
20
-
40
-
60
-
80
-
2
-
4
-
6
-
8
0
V
DD
=
-
48 V
-
24 V
-
12 V
V
GS
V
DS
-
12
-
14
-
10
I
D
=
-
16 A
Data Sheet D11264EJ1V0DS00
6
2SJ492
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
L - Inductive Load - H
I
AS
- Single Avalanche Current - A
1.0
10
100
1 m
10 m
V
DD
= 30 V
V
GS
= 20 V
0
R
G
= 25
I
D
= 20 A
E
AS
= 40
mJ
10
100
0.1
SINGLE AVALANCHE ENERGY
DERATING FACTOR
Starting Tch - Starting Channel Temperature - C
Energy Derating Factor - %
0
25
20
80
120
160
50
75
100
125
150
V
DD
= 30 V
R
G
= 25
V
GS
= 20 V
0
I
AS
<
= 20 A
100
60
40
140
Data Sheet D11264EJ1V0DS00
7
2SJ492
PACKAGE DRAWING (Unit: mm)
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
1) TO-220AB (MP-25)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1 2 3
10.6 MAX.
10.0
3.60.2
4
3.00.3
1.30.2
0.750.1
2.54 TYP.
2.54 TYP.
5.9 MIN.
6.0 MAX.
15.5 MAX.
12.7 MIN.
1.30.2
0.50.2
2.80.2
2) TO-262 (MP-25 Fin Cut)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2
3
(10)
4
1.30.2
0.750.3
2.54 TYP.
2.54 TYP.
8.5
0.2
12.7 MIN.
1.30.2
0.50.2
2.80.2
1.00
.
5
3) TO-263 (JEDEC TYPE: MP-25ZJ)
(10)
1.40.2
1.00.5
2.54 TYP.
2.54 TYP.
8.50.2
1
2
3
5.70.4
4
2.80.2
4.8 MAX.
1.30.2
0.50.2
(0.5R)
(0.8R)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.70.2
2SJ492
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consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
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Anti-radioactive design is not implemented in this product.
M4 96. 5
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