Document Outline
- COVER
- DESCRIPTION
- FEATURES
- ABSOLUTE MAXIMUM RATINGS (TA = 25 degree)
- PACKAGE DIMENSIONS
- THERMAL RESISTANCE
- ELECTRICAL CHARACTERISTICS (TA = 25 degree)
1997
DATA SHEET
MOS FIELD EFFECT POWER TRANSISTORS
2SJ495
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
This product is P-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super Low On-State Resistance
R
DS(on)1
= 30 m
MAX. (V
GS
= 10 V, I
D
= 15 A)
R
DS(on)2
= 56 m
MAX. (V
GS
= 4 V, I
D
= 15 A)
Low C
iss
C
iss
= 4120 pF TYP.
Built-in Gate Protection Diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Drain to Source Voltage
V
DSS
60
V
Gate to Source Voltage*
V
GSS(AC)
m
20
V
Gate to Source Voltage
V
GSS(DC)
20, 0
V
Drain Current (DC)
I
D(DC)
m
30
A
Drain Current (pulse)**
I
D(pulse)
m
120
A
Total Power Dissipation (T
C
= 25
C)
P
T
35
W
Total Power Dissipation (T
A
= 25
C)
P
T
2.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
*f = 20 kHz, Duty Cycle
10% (+Side)
**PW
10
s, Duty Cycle
1%
THERMAL RESISTANCE
MP-45F (ISOLATED TO-220)
Channel to Case
R
th(ch-c)
3.57
C/W
Channel to Ambient
R
th(ch-A)
62.5
C/W
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this deveice
acutally used, an addtional protection circiut is externally required if a voltage exceeding the rated voltage may be applied
to this device.
Document No. D11267EJ2V0DS00 (2nd edition)
Date Published November 1997 N
Printed in Japan
PACKAGE DIMENSIONS
(in millimeter)
2.54
2.54
1.5 0.2
1.3 0.2
2.5 0.1
1. Gate
2. Drain
3. Source
0.65 0.1
0.7 0.1
10.0 0.3
4.5 0.2
3.2 0.2
2.7 0.2
15.0 0.3
12.0 0.2
13.5 MIN.
4 0.2
3 0.1
2
1
3
Gate
Drain
Body
Diode
Gate Protection
Diode
Source
2SJ495
2
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain to Source Onstate Resistance
R
DS(on)1
V
GS
= 10 V, I
D
= 15 A
24
30
m
R
DS(on)2
V
GS
= 4 V, I
D
= 15 A
38
56
m
Gate to Source Cutoff Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.0
1.5
2.0
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 15 A
12
24
S
Drain Leakage Current
I
DSS
V
DS
= 60 V, V
GS
= 0
10
A
Gate to Source Leakage Current
I
GSS
V
GS
=
m
20 V, V
DS
= 0
m
10
A
Input Capacitance
C
iss
V
DS
= 10 V
4120
pF
Output Capacitance
C
OSS
V
GS
= 0
1750
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
580
pF
Turn-On Delay Time
t
d(on)
I
D
= 15 A
40
ns
Rise Time
t
r
V
GS(on)
= 10 V
220
ns
Turn-Off Delay Time
t
d(off)
V
DD
= 30 V
600
ns
Fall Time
t
f
R
G
= 10
380
ns
Total Gate Charge
Q
G
I
D
= 30 A
140
nC
Gate to Source Charge
Q
GS
V
DD
= 48 V
12
nC
Gate to Drain Charge
Q
GD
V
GS
= 10 V
46
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 30 A, V
GS
= 0
0.8
1.5
V
Reverse Recovery Time
t
rr
I
F
= 30 A, V
GS
= 0
160
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
s
400
nC
Test Circuit 1 Switching Time
Test Circuit 2 Gate Charge
D.U.T.
PG.
V
DD
R
L
R
G
= 10
R
G
t
V
GS
t = 1 s
Duty Cycle
1%
0
V
GS
Wave Form
V
GS
V
GS(on)
I
D
0
D
10 %
10 %
90 %
90 %
90 %
I
D
t
f
t
r
t
d(off)
t
d(on)
t
on
t
off
10 %
I
D
Wave Form
D.U.T.
I
G
= 2 mA
PG.
V
DD
R
L
50
2SJ495
3
FORWARD BIAS SAFE OPERATING AREA
V
DS -
Drain to Source Voltage - V
I
D
- Drain Current - A
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
1
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
C
- Case Temperature - C
dT - Percentage of Rated Power - %
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
T
C
- Case Temperature - C
P
T
- Total Power Dissipation - W
0
20
0
20
40
60
80
100
120
140
160
20
40
60
80
100
40
60
80
100
120
140
160
35
30
25
20
15
10
5
1
0.1
10
100
1000
1
10
100
T
C
= 25C
Single Pulse
0
4
6
8
100
10
100
1000
Pulsed
125
2
0
Pulsed
2
V
GS
= 10 V
4
T
ch
= 25C
25C
125C
6
8
1 ms
Power Dissipation Limited
DC
100 ms
I
D(DC)
10 ms
I
D(pulse)
R
DS(on)
Limited
(at V
GS
=10 V)
V
DS
= 10 V
75
50
25
500 s
V
GS
= 4 V
2SJ495
4
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
th(t)
- Transient Thermal Resistance - C/
W
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-State Resistance - m
0
10
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(off)
- Gate to Source Cutoff Voltage - V
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-State Resistance - m
40
1
10
0.001
0.01
0.1
1
100
1 000
1 m
10 m
100 m
1
10
100
1 000
10
100
V
DS
= 10 V
Pulsed
1
10
10
100
1000
100
1000
50
20
30
Pulsed
60
10
100
Pulsed
0
V
DS
= 10 V
I
D
= 1 mA
50
0
50
100
150
0
1
Single Pulse
1.0
2.0
150
100
80
V
GS
= 10 V
V
GS
= 4 V
T
ch
=25C
25C
75C
125C
I
D
= 15 A
1.5
0.5
20
R
th(ch-a) = 62.5C/W
R
th(ch-c) = 3.57C/W
2SJ495
5
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
R
DS(on)
- Drain to Source On-State Resistance - m
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - V
I
SD
- Diode Forward Current - A
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d
( off
)
, t
f
- Switching Time - ns
1
0.1
0
50
20
0
50
100
150
I
D
= 15 A
1
0
10
100
1000
1.0
Pulsed
100
0.1
1000
10000
100000
1
10
100
V
GS
= 0
f = 1 MHz
10
100
1 000
1
10
100
V
GS
- Gate to Source Voltage - V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
F
- Diode Current - A
t
rr
- Reverse Recovery Time - ns
di/dt = 50 A/ s
V
GS
= 0
1
0.1
10
1
10
100
2.0
3.0
V
DD
= 30 V
V
GS
= 10 V
R
G
=10
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
40
80
120
160
20
40
60
80
40
80
60
V
GS
= 4 V
C
iss
C
oss
C
rss
V
DD
=48 V
30 V
15 V
V
DS
t
d(off)
t
r
t
f
V
GS
= 4 V
V
GS
= 0
1000
100
2
4
6
8
0
12
14
10
I
D
= 30A
t
d(on)
V
GS
V
GS
=-10 V
2SJ495
6
Document Name
Document No.
NEC semicondacter device reliabilty/quality control system
C11745E
Power MOS FET features and application to switching power supply
D12971E
Application circuits using Power MOS FET
TEA-1035
Safe operating area of Power MOS FET
TEA-1037
Guide to prevent damage for semiconductor devices by electrostatic discharge (EDS)
C11892E
2SJ495
7
[MEMO]
2SJ495
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific:
Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96.5
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