ChipFind - документация

Электронный компонент: 2SJ648

Скачать:  PDF   ZIP

Document Outline

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
2SJ648
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. D16597EJ2V0DS00 (2nd edition)
Date Published November 2004 NS CP(K)
Printed in Japan
The mark shows major revised points.
2003
PACKAGE DRAWING (Unit: mm)
0.3
1.6 0.1
0.8 0.1
2
0.2
+0.1
0
0.5
1: Source
2: Gate
3: Drain
0.5
1.0
1.6 0.1
3
1
0.6
0.75 0.05
0 to 0.1
0.15
+0.1
0.05
+0.1
0
DESCRIPTION
The 2SJ648 is a switching device which can be driven directly by a
2.5 V power source.
The 2SJ648 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
FEATURES
2.5 V drive available
Low on-state resistance
R
DS(on)1
= 1.45
MAX. (V
GS
=
-4.5 V, I
D
=
-0.2 A)
R
DS(on)2
= 1.55
MAX. (V
GS
=
-4.0 V, I
D
=
-0.2 A)
R
DS(on)3
= 2.98
MAX. (V
GS
=
-2.5 V, I
D
=
-0.15 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ648 SC-75
(USM)
Marking: H1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
-20
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
m12
V
Drain Current (DC)
I
D(DC)
m0.4
A
Drain Current (pulse)
Note1
I
D(pulse)
m1.6
A
Total Power Dissipation
Note2
P
T
200
mW
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
-55 to +150
C
Notes 1. PW
10
s, Duty Cycle
1%
2. Mounted on ceramic substrate of 300 mm
2
x 0.64 mm.

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.

Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
V
ESD
= 100 V TYP. (C = 200 pF, R = 0
, Single pulse)
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Data Sheet D16597EJ2V0DS
2
2SJ648
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS SYMBOL
TEST
CONDITIONS MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
-20 V, V
GS
= 0 V
-1.0
A
Gate Leakage Current
I
GSS
V
GS
=
m
12 V, V
DS
= 0 V
m
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
=
-10 V, I
D
=
-1.0
mA
-0.8
-1.3
-1.8 V
Forward Transfer Admittance
Note
| y
fs
|
V
DS
=
-10 V, I
D
=
-0.2 A
0.2
0.6
S
Drain to Source On-state Resistance
Note
R
DS(on)1
V
GS
=
-4.5 V, I
D
=
-0.2 A
1.17
1.45
R
DS(on)2
V
GS
=
-4.0 V, I
D
=
-0.2 A
1.25
1.55
R
DS(on)3
V
GS
=
-2.5 V, I
D
=
-0.15 A
2.25
2.98
Input Capacitance
C
iss
V
DS
= 10 V
29
pF
Output Capacitance
C
oss
V
GS
= 0 V
15
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
3.0
pF
Turn-on Delay Time
t
d(on)
V
DD
=
-10 V, I
D
=
-0.2
A
23 ns
Rise Time
t
r
V
GS
=
-4.0
V
39 ns
Turn-off Delay Time
t
d(off)
R
G
= 10
50 ns
Fall Time
t
f
33 ns
Body Diode Forward Voltage
V
F(S-D)
I
F
= 0.4 A, V
GS
= 0 V
0.93
V
Note Pulsed PW
350
s, Duty Cycle
2%
TEST CIRCUIT SWITCHING TIME
PG.
R
G
0
V
GS (
-)
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1%
V
GS
Wave Form
V
DS
Wave Form
V
GS(
-)
V
DS(
-)
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
Data Sheet D16597EJ2V0DS
3
2SJ648
TYPICAL CHARACTERISTICS (T
A
= 25C)

TOTAL POWER DISSIPATION vs.
AMBIENT
TEMPERATURE
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
P
T
- Total Power Dissipation - mW
0
25
50
75
100
125
150
175
Mounted on ceramic substrate of
300 mm
2
0.64 mm
I
D
- Drain Current - A
0
- 0.4
- 0.8
- 1.2
- 1.6
0
- 1
- 2
- 3
- 4
- 5
Pulsed
-2.5 V
V
GS
=
-4.5 V
-4.0 V
T
A
- Ambient Temperature -
C
V
DS
- Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
GATE CUT-OFF VOLTAGE vs.
CHANNEL
TEMPERATURE
I
D
- Drain Current - A
- 0.0001
- 0.001
- 0.01
- 0.1
- 1
- 10
0
- 1
- 2
- 3
- 4
V
DS
=
-10 V
Pulsed
T
A
= 125C
75C
25C
-25C
V
G
S
(off)
- Gate Cut-off Voltage - V
- 0.6
- 0.8
- 1
- 1.2
- 1.4
- 1.6
- 50
0
50
100
150
V
DS
=
-10 V
I
D
=
-1.0 mA
V
GS
- Gate to Source Voltage - V
T
ch
- Channel Temperature -
C
FORWARD TRANSFER ADMITTANCE vs.
DRAIN
CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL
TEMPERATURE
0.01
0.1
1
10
- 0.001
- 0.01
- 0.1
- 1
- 10
T
A
=
-25C
25C
75C
125C
V
DS
=
-10 V
Pulsed
0
1
2
3
4
- 50
0
50
100
150
Pulsed
V
GS
=
-2.5 V, I
D
=
-0.15 A
V
GS
=
-4.0 V, I
D
=
-0.20 A
V
GS
=
-4.5 V, I
D
=
-0.20 A
| y
fs
| - Forward Transfer Admittance - S
I
D
- Drain Current - A
R
DS(
on)
- Drain to Source On-state Resistance -
T
ch
- Channel Temperature -
C
240
200
160
120
80
40
0
Data Sheet D16597EJ2V0DS
4
2SJ648

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN
CURRENT
R
DS(
on)
- Drain to Source On-state Resistance -
0
1
2
3
4
0
- 2
- 4
- 6
- 8
- 10
- 12
Pulsed
I
D
=
-0.20 A
R
DS(
on)
- Drain to Source On-state Resistance -
0
1
2
3
4
- 0.01
- 0.1
- 1
- 10
V
GS
=
-4.5 V
Pulsed
-25C
25C
75C
T
A
= 125C
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN
CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN
CURRENT
R
DS(
on)
- Drain to Source On-state Resistance -
0
1
2
3
4
- 0.01
- 0.1
- 1
- 10
V
GS
=
-4.0 V
Pulsed
-25C
25C
75C
T
A
= 125C
R
DS(
on)
- Drain to Source On-state Resistance -
0
1
2
3
4
- 0.01
- 0.1
- 1
- 10
V
GS
=
-2.5 V
Pulsed
-25C
25C
75C
T
A
= 125C
I
D
- Drain Current - A
I
D
- Drain Current - A
CAPACITANCE
vs.
DRAIN TO SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
1
10
100
- 0.1
- 1
- 10
- 100
V
GS
= 0 V
f = 1.0 MHz
C
iss
C
oss
C
rss
10
100
1000
- 0.01
- 0.1
- 1
- 10
V
DD
=
-10 V
V
GS
=
-4.0 V
R
G
= 10
t
d(off)
t
d(on)
t
f
t
r
C
is
s
, C
os
s
, C
rss
- Capacitance - pF
V
DS
- Drain to Source Voltage - V
t
d(
on)
, t
r
, t
d(
off)
, t
f
- Switching Time - ns
I
D
- Drain Current - A
Data Sheet D16597EJ2V0DS
5
2SJ648
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
I
F
- Diode Forward Current - A
0.001
0.01
0.1
1
10
0.4
0.6
0.8
1
1.2
1.4
V
GS
= 0 V
Pulsed
V
F(S-D)
- Source to Drain Voltage - V