Document Outline
- COVER
- DESCRIPTION
- FEATURES
- ABSOLUTE MAXIMUM RATINGS (TA = 25 degree)
- PACKAGE DIMENSIONS
- ELECTRICAL CHARACTERISTICS (TA = 25 degree)
- TYPICAL CHARACTERISTICS (TA = 25 degree)
- REFERENCE
MOS FIELD EFFECT TRANSISTORS
DESCRIPTION
The 2SK2369/2SK2370 is N-Channel MOS Field Effect Transis-
tor designed for high voltage switching applications.
FEATURES
Low On-Resistance
2SK2369: R
DS(on)
= 0.35
(V
GS
= 10 V, I
D
= 10 A)
2SK2370: R
DS(on)
= 0.4
(V
GS
= 10 V, I
D
= 10 A)
Low C
iss
C
iss
= 2400 pF TYP
.
High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain to Source Voltage(2SAK2369/2370) V
DSS
450/500
V
Gate to Source Voltage
V
GSS
30
V
Drain Current (DC)
I
D(DC)
20
A
Drain Current (pulse)*
I
D(pulse)
80
A
Total Power Dissipation (T
c
= 25 C)
P
T1
140
W
Total Power Dissipation (T
A
= 25 C)
P
T2
3.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150 C
Single Avalanche Current**
I
AS
20
A
Single Avalanche Energy**
E
AS
285
mJ
* PW
10
s, Duty Cycle
1 %
** Starting T
ch
= 25 C, R
G
= 25
, V
GS
= 20 V
0
2SK2369/2SK2370
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
PACKAGE DIMENSIONS
(in millimeters)
3
4.7 MAX.
1.5
7.0
2.8 0.1
0.6 0.1
1.0 0.2
2.2 0.2
5.45
5.45
15.7 MAX
4
1
2
4.5 0.2
20.0 0.2
3.0 0.2
6.0
1.0
19 MIN.
1. Gate
2. Drain
3. Source
4. Fin (Drain)
3.0 0.2
MP-88
Body
Diode
Source
Drain
Gate
Document No. TC-2507
(O. D. No. TC-8066)
Date Published January 1995 P
Printed in Japan
1995
DATA SHEET
2SK2369/2SK2370
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
TEST CONDITIONS
Drain to Source On-State Resistance
R
DS(on)
0.30
0.35
V
GS
= 10 V 2SK2369
0.32
0.40
I
D
= 10 V 2SK2370
Gate to Source Cutoff Voltage
V
GS(off)
2.5
3.5
V
DS
= 10 V, I
D
= 1 mA
Forward Transfer Admittance
| y
fs
|
7.5
V
DS
= 10 V, I
D
= 10 A
Drain Leakage Current
I
DSS
100
V
DS
= V
DSS
, V
GS
= 0
Gate to Source Leakage Current
I
GSS
100
V
GS
=
30 V, V
DS
= 0
Input Capacitance
C
iss
2400
V
DS
= 10 V
Output Capacitance
C
oss
500
V
GS
= 0
Reverse Transfer Capacitance
C
rss
45
f = 1 MHz
Turn-On Delay Time
t
d(on)
35
I
D
= 10 A
Rise Time
t
r
60
V
GS
= 10 V
Turn-Off Delay Time
t
d(off)
105
V
DD
= 150 V
Fall Time
t
f
65
R
G
= 10
R
L
= 15
Total Gate Charge
Q
G
65
I
D
= 20 A
Gate to Source Charge
Q
GS
15
V
DD
= 400 V
Gate to Drain Charge
Q
GD
30
V
GS
= 10 V
Body Diode Forward Voltage
V
F(S-D)
1.0
I
F
= 20 A, V
GS
= 0
Reverse Recovery Time
t
rr
500
I
F
= 20 A, V
GS
= 0
Reverse Recovery Charge
Q
rr
3.5
di/dt = 50 A/
s
UNIT
V
S
A
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
C
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
Test Circuit 3 Gate Charge
V
GS
= 20 - 0 V
PG
R
G
= 25
50
D.U.T.
L
V
DD
Test Circuit 1 Avalanche Capability
PG.
R
G
= 10
D.U.T.
R
L
V
DD
Test Circuit 2 Switching Time
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
t = 1us
Duty Cycle
1 %
V
GS
Wave Form
I
D
Wave Form
V
GS
I
D
10 %
10 %
0
0
90 %
90 %
90 %
10 %
V
GS (on)
I
D
t
on
t
off
t
d (on)
t
r
t
d (off)
t
f
t
2SK2369/2SK2370
3
TYPICAL CHARACTERISTICS (T
A
= 25 C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
20
140
160
100
T
C
- Case Temperature - (C)
dT - Percentage of Rated Power - (%)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - (V)
I
D
- Drain Current - (A)
FORWARD BIAS SAFE OPERATING AREA
10
100
1 000
100
V
DS
- Drain to Source Voltage - (V)
I
D
- Drain Current - (A)
5
20
10
15
25
80
0
40
1.0
10
0.1
60
20
60
40
80
100
120
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
20
140
160
100
T
C
- Case Temperature - (C)
P
T
- Total Power Dissipation - (W)
80
0
40
60
20
60
40
80
100
120
120
140
20
15
10
5
0
1
5 V
6 V
8 V
V
GS
= 10 V
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
5
10
15
100
V
GS
- Gate to Source Voltage - (V)
I
D
- Drain Current - (A)
1.0
10
0.1
0
T
C
= 25 C
Single Pulse
1 ms
10 ms
PW = 10 s
R
DS (on)
Limited
at (V
GS
= 10 V)
I
D (pulse)
I
D (DC)
Power Dissipation Limited
V
DS
= 10 V
Pulsed
T
ch
= 125 C
75 C
25 C
25 C
100 s
2SK2369/2SK2370
4
GATE TO SOURCE CUT OFF VOLTAGE
vs. CHANNEL TEMPERATURE
T
ch
- Channel Temperature - (C)
V
GS (off)
- Gate to Source Cutoff Voltage - (V)
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - (A)
R
DS (on)
- Drain to Source on-State Resistance - (
)
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - (s)
r
th
(t)
- Transient Thermal Resistance - (C/
W)
10
100
1 m
10 m
100 m
1
10
100
1 000
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
20
30
2.5
V
GS
- Gate to Source Voltage - (V)
R
DS (on)
Drain to Source On-State Resistance - (
)
1.5
0.5
0
2.0
1.0
5
15
25
I
D
= 20 A
10 A
5 A
V
DS
= 10 V
Pulsed
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1.0
10
100
100
I
D
- Drain Current - (A)
| yfs | - Forward Transfer Admittance - (S)
T
ch
= 25 C
25 C
75 C
125 C
10
1.0
1.0
100
0.1
10
25
25
50
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0
50
75 100 125 150 175
V
DS
= 10 V
I
D
= 1 mA
T
C
= 25 C
Single Pulse
R
th (ch-a)
= 41.7 C/W
R
th (ch-c)
= 0.89 C/W
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
V
GS
= 10 V
1 000
100
10
1
0.1
0.01
0.001
2SK2369/2SK2370
5
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - (C)
R
DS (on)
- Drain to Source On-State Resistance - (
)
REVERSE RECOVERY TIME vs.
REVERSE DRAIN CURRENT
1.0
100
I
F
- Forward Current - (A)
t
rr
- Reverse Recovery Time - (ns)
0.1
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - (V)
I
SD
- Diode Forward Current - (A)
1.5
100
10
1
0.1
0.01
1.0
0.5
0
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - (V)
C
iss
, C
oss
, C
rss
- Capacitance - (pF)
1.0
10
100
1 000
I
D
- Drain Current - (A)
t
d (on)
, t
r
, t
d (off)
, t
f
- Switching Time - (ns)
100
0.1
10
1.0
V
DD
= 150 V
V
GS
= 10 V
R
in
= 10
SWITCHING CHARACTERISTICS
t
r
t
f
t
d (off)
t
d (on)
100
1 000
10 000
1 000
100
10
C
rss
10
1.0
0.1
0.01
V
GS
= 0 V
f = 1 MHz
C
iss
C
oss
600
500
400
300
200
100
0
d
i
/d
t
= 50 A/ s
V
GS
= 0 V
10
25
25
50
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
50
75 100 125 150 175
V
GS
= 10 V
Pulsed
I
D
= 20 A
10 A
V
GS
= 0 V
V
GS
= 10 V
I
D
= 20 A
Q
g
- Gate Charge - (nC)
V
DS
- Drain to Source Voltage - (V)
0
60
70
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
- Gate to Source Voltage - (V)
20
18
16
14
12
10
8
6
4
2
0
V
DD
= 400 V
250 V
125 V
V
GS
10
20
30
40
50
V
DS
500
400
300
200
100
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