1994
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The 2SK2414 is N-Channel MOS Field Effect Transistor designed
for high voltage switching applications.
FEATURES
Low On-Resistance
R
DS(on)1
= 70 m
MAX. (@ V
GS
= 10 V, I
D
= 5.0 A)
R
DS(on)2
= 95 m
MAX. (@ V
GS
= 4 V, I
D
= 5.0 A)
Low C
iss
C
iss
= 840 pF TYP.
Built-in G-S Gate Protection Diodes
High Avalanche Capability Ratings
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended applica-
tions.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Drain to Source Voltage
V
DSS
60
V
Gate to Source Voltage
V
GSS
20
V
Drain Current (DC)
I
D(DC)
10
A
Drain Current (pulse)*
I
D(pulse)
40
A
Total Power Dissipation (T
c
= 25 C)
P
T1
20
W
Total Power Dissipation (T
A
= 25 C)
P
T2
1.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Single Avalanche Current**
I
AS
10
A
Single Avalanche Energy**
E
AS
10
mJ
*
PW
10
s, Duty Cycle
1 %
** Starting T
ch
= 25 C, R
G
= 25
, V
GS
= 20 V
0
2SK2414, 2SK2414-Z
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
The information in this document is subject to change without notice.
Document No. D13193EJ2V0DS00 (2nd edition)
(Previous No. TC-2495)
Date Published March 1998 N CP(K)
Printed in Japan
PACKAGE DIMENSIONS
(in millimeter)
MP-3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
6.5 0.2
5.0 0.2
2.3 0.2
0.5 0.1
0.6 0.1
0.6 0.1
1.3
MAX.
1.6 0.2
1
2 3
5.5 0.2
7.0
MIN.
13.7
MIN.
2.3 2.3
0.75
4
6.5 0.2
5.0 0.2
2.3 0.2
0.5 0.1
4.3
MAX.
1.3
MAX.
2.3 2.3
1 2
3
4
5.5 0.2
10.0 MAX.
1.5
+0.2
0.1
1.5
+0.2
0.1
0.9
MAX.
0.8
MAX.
0.8
0.5
0.8
12.0
MIN.
1.0
MIN.
1.5
TYP.
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-3Z (SURFACE MOUNT TYPE)
Drain
Gate
Source
Body
Diode
Gate Protection
Diode
2SK2414, 2SK2414-Z
2
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
TEST CONDITIONS
Drain to Source On-Resistance
R
DS(on)1
52
70
V
GS
= 10 V, I
D
= 5.0 A
Drain to Source On-Resistance
R
DS(on)2
68
95
V
GS
= 4 V, I
D
= 5.0 A
Gate to Source Cutoff Voltage
V
GS(off)
1.0
1.6
2.0
V
DS
= 10 V, I
D
= 1 mA
Forward Transfer Admittance
| y
fs
|
7.0
12
V
DS
= 10 V, I
D
= 5.0 A
Drain Leakage Current
I
DSS
10
V
DS
= 60 V, V
GS
= 0
Gate to Source Leakage Current
I
GSS
10
V
GS
=
20 V, V
DS
= 0
Input Capacitance
C
iss
860
V
DS
= 10 V
Output Capacitance
C
oss
440
V
GS
= 0
Reverse Transfer Capacitance
C
rss
110
f = 1 MHz
Turn-On Delay Time
t
d(on)
15
I
D
= 5.0 A
Rise Time
t
r
90
V
GS(on)
= 10 V
Turn-Off Delay Time
t
d(off)
75
V
DD
= 30 V
Fall Time
t
f
35
R
G
= 10
Total Gate Charge
Q
G
24
I
D
= 10 A
Gate to Source Charge
Q
GS
2.6
V
DD
= 48 V
Gate to Drain Charge
Q
GD
6.0
V
GS
= 10 V
Body Diode Forward Voltage
V
F(S-D)
1.0
I
F
= 10 A, V
GS
= 0
Reverse Recovery Time
t
rr
85
I
F
= 10 A, V
GS
= 0
Reverse Recovery Charge
Q
rr
220
di/dt = 50 A/
s
UNIT
m
m
V
S
A
A
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
Test Circuit 1 Avalanche Capability
Test Circuit 2 Switching Time
R
G
= 25
50
D.U.T.
PG
L
V
DD
V
GS
= 20 V
0
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
R
G
D.U.T.
PG.
0
t
R
L
V
DD
V
GS
t = 1 s
Duty Cycle
1 %
V
GS
Wave
Form
I
D
Wave
Form
I
D
0
0
10 %
10 %
90 %
90 %
10 %
90 %
I
D
V
GS (on)
t
d (off)
t
d (on)
t
on
t
off
t
f
t
r
Test Circuit 3 Gate Charge
D.U.T.
R
L
V
DD
50
I
G
= 2 mA
PG.
V
DD
V
GS
R
G
= 10
2SK2414, 2SK2414-Z
3
TYPICAL CHARACTERISTICS (T
A
= 25
C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
FORWARD BIAS SAFE OPERATING AREA
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
100
40
60
80
100
120
140
160
20
40
60
80
100
20
40
60
80
100
120
140
160
8
12
16
20
24
10
1
1
10
100
Pulsed
0
2
50
4
6
8
10
0
10
4
8
100
1000
V
GS
- Gate to Source Voltage - V
V
DS
- Drain to Source Voltage - V
V
DS
- Drain to Source Voltage - V
T
c
- Case Temperature - C
T
c
- Case Temperature - C
P
T
- Total Power Dissipation - W
dT - Percentage of Rated Power - %
I
D
- Drain Current - A
I
D
- Drain Current - A
I
D
- Drain Current - A
T
A
= 25 C
0
0
20
0.1
40
30
20
10
1
2
3
5
6
7
25 C
125 C
4
Pulsed
V
DS
= 10 V
1
Power Dissipation Limited
R
DS (on)
Limited
(at V
GS
= 10 V)
10 ms
I
D (DC)
1 ms
T
c
= 25 C
Single Pulse
100 ms
DC
I
D (pulse)
100 s
PW = 10 s
V
GS
= 10 V
V
GS
= 4 V
V
GS
= 6 V
2SK2414, 2SK2414-Z
4
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
1000
100
10
1
0.1
10
100
1 m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
100
10
1
1
10
100
I
D
- Drain Current - A
120
100
80
60
40
20
0
10
20
V
GS
- Gate to Source Voltage - V
2.0
50
1.5
1.0
0.5
0
0
50
100
150
T
ch
- Channel Temperature - C
V
DS
= 10 V
I
D
= 1 mA
1
I
D
- Drain Current - A
100
80
60
0
10
100
R
DS (on)
- Drain to Source On-State Resistance - m
|y
fs
| - Forward Transfer Admittance - S
r
th
(t) - Transient Thermal Resistance - C/W
R
DS (on)
- Drain to Source On-State Resistance - m
V
GS (off)
- Gate to Source Cutoff Voltage - V
V
DS
= 10 V
Pulsed
120
75 C
125 C
Pulsed
I
D
= 5 A
40
20
0.01
Single Pulse
5
15
25
25
75
125
T
A
= 25 C
25 C
R
th (ch-a)
= 125 C/W
R
th (ch-c)
= 6.25 C/W
I
D
= 5 A
V
GS
= 10 V
V
GS
= 4 V
Pulsed
2SK2414, 2SK2414-Z
5
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
SWITCHING CHARACTERISTICS
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
1
0
0
50
V
GS
= 0
T
ch
- Channel Temperature - C
40
100
60
0
50
150
100
V
GS
= 4 V
V
GS
= 10 V
10
1
V
DS
- Drain to Source Voltage - V
10
100
100
1000
10000
V
SD
- Source to Drain Voltage - V
I
D
- Drain Current - A
1000
100
10
1.0
0.1
1.0
10
100
t
f
t
d (on)
t
d (off)
I
D
- Drain Current - A
Q
g
- Gate Charge - nC
10
0.1
1.0
10
100
100
0
10
20
30
40
20
40
60
80
0
2
4
6
8
10
12
14
16
R
DS (on)
- Drain to Source On-State Resistance - m
C
iss
, C
oss
, C
rss
- Capacitance - pF
t
rr
- Reverse Recovery time - ns
t
d (on)
, t
r
, t
d (off)
, t
f
- Switching Time - ns
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
I
SD
- Diode Forward Current - A
I
D
= 5 A
V
DD
= 30 V
V
GS
= 10 V
R
G
= 10
2.0
1.0
0.1
V
GS
= 10 V
25
75
25
125
20
80
120
t
r
Pulsed
50
I
D
= 10 A
V
DD
= 48 V
V
DS
V
GS
C
rss
C
oss
C
iss
V
GS
= 0
f = 1 MHz
di/dt = 50 A/ s
V
GS
= 0
2SK2414, 2SK2414-Z
6
SINGLE AVALANCHE ENERGY vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
100
10
1.0
10
100
1 m
10 m
L - Inductive Load - H
100
80
60
40
20
0
25
50
75
100
125
150
Starting T
ch
- Starting Channel Temperature - C
V
DD
= 30 V
R
G
= 25
V
GS
= 20 V
0
I
AS
10 A
I
AS
- Single Avalanche Energy - mJ
dt - Energy Derating Factor - %
V
DD
= 30 V
V
GS
= 20 V
0
R
G
= 25 W
I
AS
= 10 A
E
AS
= 10 mJ
2SK2414, 2SK2414-Z
7
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system.
C11745E
Quality grade on NEC semiconductor devices.
C11531E
Semiconductor device mounting technology manual.
C10535E
IC package manual.
C10943X
Guide to quality assurance for semiconductor devices.
MEI-1202
Semiconductor selection guide.
X10679E
Power MOS FET features and application switching power supply.
D12971E
Application circuits using Power MOS FET.
D12972E
Safe operating area of Power MOS FET.
D13085E
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the
rated voltage may be applied to this device.
2SK2414, 2SK2414-Z
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special:
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific:
Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96.5
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