Document Outline
- COVER
- DESCRIPTION
- FEATURES
- ABSOLUTE MAXIMUM RATINGS (TA = 25 degree)
- PACKAGE DIMENSIONS
- ELECTRICAL CHARACTERISTICS (TA = 25 degree)
- TYPICAL CHARACTERISTICS (TA = 25 degree)
- REFERENCE
MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The 2SK2481 is N-Channel MOS Field Effect Transistor de-
signed for high voltage switching applications.
FEATURES
Low On-Resistance
R
DS(on)
= 4.0
(V
GS
= 10 V, I
D
= 2.0 A)
Low C
iss
C
iss
= 900 pF TYP
.
High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain to Source Voltage
V
DSS
900
V
Gate to Source Voltage
V
GSS
30
V
Drain Current (DC)
I
D(DC)
4.0
A
Drain Current (pulse)*
I
D(pulse)
12
A
Total Power Dissipation (T
c
= 25 C)
P
T1
70
W
Total Power Dissipation (T
A
= 25 C)
P
T2
1.5
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150 C
Single Avalanche Current**
I
AS
4.0
A
Single Avalanche Energy**
E
AS
65.9
mJ
* PW
10
s, Duty Cycle
1 %
** Starting T
ch
= 25 C, R
G
= 25
, V
GS
= 20 V
0
2SK2481
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
PACKAGE DIMENSIONS
(in millimeters)
Document No. D10273EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan
1995
DATA SHEET
10.6 MAX.
10.0
3.0 0.3
3.6 0.2
5.9 MIN.
15.5 MAX.
6.0 MAX.
12.7 MIN.
1.3 0.2
0.75 0.1
2.54
2.54
4.8 MAX.
1.3 0.2
0.5 0.2
2.8 0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
JEDEC: TO-220AB
MP-25 (TO-220)
4
1 2 3
Body
Diode
Source
Drain
Gate
2SK2481
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
TEST CONDITIONS
Drain to Source On-State Resistance
R
DS(on)
3.2
4.0
V
GS
= 10 V, I
D
= 2.0 A
Gate to Source Cutoff Voltage
V
GS(off)
2.5
3.5
V
DS
= 10 V, I
D
= 1 mA
Forward Transfer Admittance
| y
fs
|
1.0
V
DS
= 20 V, I
D
= 2.0 A
Drain Leakage Current
I
DSS
100
V
DS
= V
DSS
, V
GS
= 0
Gate to Source Leakage Current
I
GSS
100
V
GS
=
30 V, V
DS
= 0
Input Capacitance
C
iss
900
V
DS
= 10 V
Output Capacitance
C
oss
130
V
GS
= 0
Reverse Transfer Capacitance
C
rss
25
f = 1 MHz
Turn-On Delay Time
t
d(on)
17
I
D
= 2.0 A
Rise Time
t
r
7
V
GS
= 10 V
Turn-Off Delay Time
t
d(off)
63
V
DD
= 150 V
Fall Time
t
f
8
R
G
= 10
Total Gate Charge
Q
G
30
I
D
= 4.0 A
Gate to Source Charge
Q
GS
5
V
DD
= 450 V
Gate to Drain Charge
Q
GD
13
V
GS
= 10 V
Body Diode Forward Voltage
V
F(S-D)
1.0
I
F
= 4.0 A, V
GS
= 0
Reverse Recovery Time
t
rr
710
I
F
= 4.0 A, V
GS
= 0
Reverse Recovery Charge
Q
rr
3.5
di/dt = 50 A/
s
UNIT
V
S
A
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
C
Test Circuit 3 Gate Charge
V
GS
= 20 - 0 V
PG
R
G
= 25
50
D.U.T.
L
V
DD
Test Circuit 1 Avalanche Capability
PG.
R
G
= 10
D.U.T.
R
L
V
DD
Test Circuit 2 Switching Time
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
t = 1us
Duty Cycle
1 %
V
GS
Wave Form
I
D
Wave Form
V
GS
I
D
10 %
10 %
0
0
90 %
90 %
90 %
10 %
V
GS (on)
I
D
t
on
t
off
t
d (on)
t
r
t
d (off)
t
f
t
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2SK2481
3
TYPICAL CHARACTERISTICS (T
A
= 25 C)
FORWARD BIAS SAFE OPERATING AREA
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
C
- Case Temperature - C
dT - Percentage of Rated Power - %
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
T
C
- Case Temperature - C
P
T
- Total Power Dissipation - W
0
20
0
20
40
60
80
100
120
140
160
20
40
60
80
100
40
60
80
100
120
140
160
70
60
50
40
30
20
10
0.1
1
1
10
100
10
100
1000
T
C
= 25 C
Single Pulse
1 ms
I
D(pulse)
R
DS(on)
Limited
(V
GS
= 10 V)
PW = 100 s
10 ms
Power Dissiation Limited
I
D(DC)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
0
20
30
40
5
10
10
Pulsed
V
GS
= 20 V
10 V
8 V
6 V
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
0.1
1.0
10
100
Pulsed
V
DS
= 10 V
0
5
10
15
T
A
= 25 C
25 C
75 C
125 C
2SK2481
4
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
th(t)
- Transient Thermal Resistance - C/
W
10
0.001
0.01
0.1
1
100
1 000
1 m
10 m
100 m
1
10
100
1 000
10
100
Single Pulse
T
c
= 25 C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-State Resistance -
0
10
5
20
30
Pulsed
10
I
D
= 4 A
2 A
0.8 A
R
th(ch-a)
= 83.3(C/W)
R
th(ch-c)
= 1.79(C/W)
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(off)
- Gate to Source Cutoff Voltage - V
5
V
DS
= 10 V
I
D
= 1 mA
50
0
50
100
150
0
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-State Resistance -
1.0
5
10
100
0
1
2
3
4
6
7
8
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
V
DS
= 20 V
Pulsed
1
0.1
1.0
10
100
1.0
10
0.1
T
A
= 25 C
25 C
75 C
125 C
0.1
Pulsed
V
GS
= 10 V
2SK2481
5
V
GS
- Gate to Source Voltage - V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
D
- Drain Current - A
t
rr
- Reverse Recovery time - ns
di/dt = 50 A/ s
V
GS
= 0
10
0.1
100
1 000
1.0
10
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Q
g
- Gate Charge - nC
8
16
24
32
4
12
20
28
2
4
6
8
10
12
14
16
0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
R
DS(on)
- Drain to Source On-State Resistance -
0
50
5
0
50
100
150
V
GS
= 10 V
I
D
= 2 A
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
10
1.0
100
1 000
10 000
10
100
1000
V
GS
= 0
f = 1 MHz
C
iss
C
rss
C
oss
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
1.0
0.1
10
100
1 000
1.0
10
100
V
DD
= 150 V
V
GS
= 10 V
R
G
=10
t
d(off)
t
r
t
d(on)
t
f
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - V
I
SD
- Diode Forward Current - A
0.1
0
1
10
100
0.5
Pulsed
1.0
1.5
V
GS
= 10 V
V
GS
= 0 V
I
D
= 4.0 A
V
DD
= 450 V
300 V
150 V
10 000
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