Document Outline
- COVER
- DESCRIPTION
- FEATURES
- ABSOLUTE MAXIMUM RATINGS (TA = 25 degree)
- PACKAGE DIMENSIONS
- ELECTRICAL CHARACTERISTICS (TA = 25 degree)
- TYPICAL CHARACTERISTICS (TA = 25 degree)
- REFERENCE
MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The 2SK2487 is N-Channel MOS Field Effect Transistor designed
for high voltage switching applications.
FEATURES
Low On-Resistance
R
DS (on)
= 1.6
(V
GS
= 10 V, I
D
= 4.0 A)
Low C
iss
C
iss
= 2 100 pF TYP.
High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain to Source Voltage
V
DSS
900
V
Gate to Source Voltage
V
GSS
30
V
Drain Current (DC)
I
D (DC)
8.0
A
Drain Current (pulse)*
I
D (pulse)
20
A
Total Power Dissipation (T
c
= 25 C)
P
T1
140
W
Total Power Dissipation (T
A
= 25 C)
P
T2
3.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150 C
Single Avalanche Current**
I
AS
8.0
A
Single Avalanche Energy**
E
AS
264
mJ
*
PW
10
s, Duty Cycle
1 %
** Starting T
ch
= 25 C, R
G
= 25
, V
GS
= 20 V
0
2SK2487
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D10283EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan
PACKAGE DIMENSIONS
(in millimeter)
1.00.2
1
2
3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-88
4
15.7 MAX.
3.20.2
2.80.1
0.60.1
2.20.2
5.45
5.45
4.7 MAX.
1.5
1.0
6.0
7.0
19 MIN.
20.00.2
3.00.2
4.50.2
Body
Diode
Source
Drain
Gate
1995
DATA SHEET
2SK2487
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
TEST CONDITIONS
Drain to Source On-Resistance
R
DS (on)
1.1
1.6
V
GS
= 10 V, I
D
= 4.0 A
Gate to Source Cutoff Voltage
V
GS (off)
2.5
3.5
V
DS
= 10 V, I
D
= 1 mA
Forward Transfer Admittance
| y
fs
|
3.0
V
DS
= 20 V, I
D
= 4.0 A
Drain Leakage Current
I
DSS
100
V
DS
= V
DSS
, V
GS
= 0
Gate to Source Leakage Current
I
GSS
100
V
GS
=
30 V, V
DS
= 0
Input Capacitance
C
iss
2 100
V
DS
= 10 V
Output Capacitance
C
oss
310
V
GS
= 0
Reverse Transfer Capacitance
C
rss
60
f = 1 MHz
Turn-On Delay Time
t
d (on)
30
I
D
= 4.0 A
Rise Time
t
r
20
V
GS
= 10 V
Turn-Off Delay Time
t
d (off)
130
V
DD
= 150 V
Fall Time
t
f
23
R
G
= 10
Total Gate Charge
Q
G
65
I
D
= 8.0 A
Gate to Source Charge
Q
GS
11
V
DD
= 450 V
Gate to Drain Charge
Q
GD
29
V
GS
= 10 V
Body Diode Forward Voltage
V
F (S-D)
1.0
I
F
= 8.0 A, V
GS
= 0
Reverse Recovery Time
t
rr
770
I
F
= 8.0 A, V
GS
= 0
Reverse Recovery Charge
Q
rr
5.0
di/dt = 50 A/
s
UNIT
V
S
A
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
C
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
Test Circuit 3 Gate Charge
V
GS
= 20 - 0 V
PG
R
G
= 25
50
D.U.T.
L
V
DD
Test Circuit 1 Avalanche Capability
PG.
R
G
= 10
D.U.T.
R
L
V
DD
Test Circuit 2 Switching Time
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
t = 1 us
Duty Cycle
1 %
V
GS
Wave Form
I
D
Wave Form
V
GS
I
D
10 %
10 %
0
0
90 %
90 %
90 %
10 %
V
GS (on)
I
D
t
on
t
off
t
d (on)
t
r
t
d (off)
t
f
t
2SK2487
3
TYPICAL CHARACTERISTICS (T
A
= 25 C)
FORWARD BIAS SAFE OPERATING AREA
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
0.1
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
T
C
- Case Temperature - C
P
T
- Total Power Dissipation - W
0
20
40
60
80
100
120
140
160
140
120
100
80
60
40
20
0.1
1
1
10
100
10
100
1 000
T
C
= 25 C
Single Pulse
0
20
30
40
10
1.0
10
100
Pulsed
20
10
0
Pulsed
5
10
15
R
DS(on)
Limited
Power Dissipation Limited
I
D(DC)
I
D(pulse)
PW = 100 s
1 ms
10 ms
T
A
= 25 C
25 C
75 C
125 C
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
C
- Case Temperature - C
dT - Percentage of Rated Power - %
0
20
40
60
80
100
120
140
160
20
40
60
80
100
T
A
= 25 C
25 C
75 C
125 C
2SK2487
4
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
th(t)
- Transient Thermal Resistance - C/
W
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-State Resistance -
0
10
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(off)
- Gate to Source Cutoff Voltage - V
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-State Resistance -
0.5
1.0
10
0.001
0.01
0.1
1
100
1 000
1 m
10 m
100 m
1
10
100
1 000
10
V
DS
= 20 V
Pulsed
1
0.1
1
10
100
10
100
1.0
20
30
Pulsed
1.0
10
100
Pulsed
V
GS
= 10 V
0
4
V
DS
= 10 V
I
D
= 1 mA
50
0
50
100
150
0
1
Single Pulse
T
c
= 25 C
2.0
R
th(ch-a)
= 41.7(C/W)
R
th(ch-c)
= 0.89(C/W)
3
2
1
1.5
100
T
A
= 25 C
25 C
75 C
125 C
I
D
= 8 A
4 A
1.6 A
2SK2487
5
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
R
DS(on)
- Drain to Source On-State Resistance -
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - V
I
SD
- Diode Forward Current - A
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
1.0
0.1
0
50
1.0
0
50
100
150
V
GS
= 10 V
I
D
= 4 A
0.1
0
1
10
100
0.5
Pulsed
10
1.0
100
1 000
10 000
10
100
1 000
V
GS
= 0
f = 1 MHz
10
100
1 000
1.0
10
100
V
GS
- Gate to Source Voltage - V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
D
- Drain Current - A
t
rr
- Reverse Recovery time - ns
di/dt = 50 A/ s
V
GS
= 0
10
0.1
100
1 000
1.0
10
100
1.0
1.5
V
DD
= 150 V
V
GS
= 10 V
R
G
= 10
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Q
g
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
20
40
60
80
200
400
600
800
2
4
6
8
10
12
14
16
0
2.0
3.0
4.0
C
iss
C
rss
C
oss
V
DD
= 450 V
300 V
150 V
V
GS
V
DS
t
r
t
d(on)
t
f
t
d(off)
V
GS
= 10 V
V
GS
= 0V
10 000
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