Document Outline
- COVER
- DESCRIPTION
- FEATURES
- ABSOLUTE MAXIMUM RATINGS (TA = 25 degree)
- PACKAGE DIMENSIONS
- ELECTRICAL CHARACTERISTICS (TA = 25 degree)
- TYPICAL CHARACTERISTICS (TA = 25 degree)
- REFERENCE
MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
2SK2498 is N-Channel MOS Field Effect Transistor designed for
high current switching applications.
FEATURES
Super Low On-State Resistance
R
DS (on)
1
9 m
(V
GS
= 10 V, I
D
= 25 A)
R
DS (on)
2
14 m
(V
GS
= 4 V, I
D
= 25 A)
Low C
iss
C
iss
= 3400 pF TYP.
High Avalanche Capability Ratings
Isolate TO-220 Package
Buit-in G-S Protection Diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain to Source Voltage
V
DSS
60
V
Gate to Source Voltage
V
GSS
20
V
Drain Current (DC)
I
D(DC)
50
A
Drain Current (pulse)*
I
D(pulse)
200
A
Total Power Dissipation (T
c
= 25 C)
P
T1
35
W
Total Power Dissipation (T
A
= 25 C)
P
T2
2.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150 C
Single Avalanche Current**
I
AS
50
A
Single Avalanche Energy**
E
AS
250
mJ
*
PW
10
s, Duty Cycle
1 %
** Starting T
ch
= 25 C, R
G
= 25
, V
GS
= 20 V
0
2SK2498
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D10044EJ1V0DS00 (1st edition)
Date Published July 1995 P
Printed in Japan
PACKAGE DIMENSIONS
(in millimeter)
1995
DATA SHEET
10.00.3
4.50.2
3.20.2
2.70.2
2.50.1
1.30.2
1.50.2
2.54
0.70.1
2.54
0.650.1
1 2 3
30.1
40.2
15.00.3
12.00.2
13.5MIN.
1. Gate
2. Drain
3. Source
MP-45F (ISOLATED TO-220)
Body
Diode
Source
Drain
Gate
Gate Protection
Diode
2SK2498
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Drain to Source On-Resistance
R
DS (on)1
7.3
9.0
m
V
GS
= 10 V, I
D
= 25 A
R
DS (on)2
11
14
m
V
GS
= 4 V, I
D
= 25 A
Gate to Source Cutoff Voltage
V
GS (off)
1.0
1.5
2.0
V
V
DS
= 10 V, I
D
= 1 mA
Forward Transfer Admittance
| y
fs
|
20
58
S
V
DS
= 10 V, I
D
= 25 A
Drain Leakage Current
I
DSS
10
A
V
DS
= 60 V, V
GS
= 0
Gate to Source Leakage Current
I
GSS
10
nA
V
GS
=
20 V, V
DS
= 0
Input Capacitance
C
iss
3400
pF
V
DS
= 10 V
Output Capacitance
C
oss
1600
pF
V
GS
= 0
Reverse Transfer Capacitance
C
rss
770
pF
f = 1 MHz
Turn-On Delay Time
t
d (on)
55
ns
I
D
= 25 A
Rise Time
t
r
360
ns
V
GS(on)
= 10 V
Turn-Off Delay Time
t
d (off)
480
ns
V
DD
= 30 V
Fall Time
t
f
360
ns
R
G
= 10
Total Gate Charge
Q
G
152
nC
I
D
= 50 A
Gate to Source Charge
Q
GS
11
nC
V
DD
= 48 V
Gate to Drain Charge
Q
GD
60
nC
V
GS
= 10 V
Body Diode Forward Voltage
V
F (S-D)
0.92
V
I
F
= 50 A, V
GS
= 0
Reverse Recovery Time
t
rr
105
ns
I
F
= 50 A, V
GS
= 0
Reverse Recovery Charge
Q
rr
265
C
di/dt = 100 A/
s
Test Circuit 1 Avalanche Capability
Test Circuit 2 Switching Time
V
GS
= 20
0 V
PG
R
G
= 25
50
D.U.T.
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
Test Circuit 3 Gate Charge
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
PG.
R
G
= 10
D.U.T.
R
L
V
DD
R
G
V
GS
0
t = 1 s
Duty Cycle
1 %
V
GS
Wave Form
I
D
Wave Form
V
GS
I
D
10 %
10 %
0
0
90 %
90 %
90 %
10 %
V
GS (on)
I
D
t
on
t
off
t
d (on)
t
r
t
d (off)
t
f
t
2SK2498
3
TYPICAL CHARACTERISTICS (T
A
= 25 C)
FORWARD BIAS SAFE OPERATING AREA
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
1
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
C
- Case Temperature - C
dT - Percentage of Rated Power - %
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
T
C
- Case Temperature - C
P
T
- Total Power Dissipation - W
0
20
0
20
40
60
80
100
120
140
160
20
40
60
80
100
40
60
80
100
120
140
160
70
60
50
40
30
20
10
1
0.1
10
100
1000
1
10
100
T
C
= 25 C
Single Pulse
0
2
3
4
40
80
120
160
8
10
100
1000
Pulsed
200
1
0
I
D(pulse)
1 ms
Power Dissipation Limited
R
DS(on)
Limited
(at V
GS
= 10 V)
Pulsed
V
GS
= 4 V
V
GS
= 10 V
DC
I
D(DC)
V
DS
=
10 V
10ms
T
A
= 25 C
25 C
125 C
2
4
6
100ms
100 s
PW=10 s
V
GS
= 20 V
2SK2498
4
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
th(t)
- Transient Thermal Resistance - C/
W
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
|y
fs
| - Forward Transfer Admittance - S
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-State Resistance - m
0
10
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(off)
- Gate to Source Cutoff Voltage - V
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-State Resistance - m
10
10
10
0.001
0.01
0.1
1
100
1 000
1 m
10 m
100 m
1
10
100
1 000
10
100
V
DS
= 10 V
Pulsed
1
10
10
100
1000
100
1000
10
30
20
30
Pulsed
20
100
1000
Pulsed
Single Pulse
0
30
0.5
V
DS
= 10 V
I
D
= 1 mA
1.0
1.5
2.0
50
0
50
100
150
0
R
th(ch-a)
= 62.5 C/W
R
th(ch-c)
= 3.57 C/W
I
D
= 25 A
V
GS
= 10 V
1
20
V
GS
= 4 V
2SK2498
5
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
R
DS(on)
- Drain to Source On-State Resistance - m
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - V
I
SD
- Diode Forward Current - A
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
1.0
0.1
0
50
5
10
15
0
50
100
150
I
D
= 25 A
0.1
0
1
10
100
0.5
Pulsed
100
0.1
1 000
10 000
100 000
1
10
100
V
GS
= 0
f = 1 MHz
10
100
1 000
1.0
10
100
V
GS
- Gate to Source Voltage - V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
D
- Drain Current - A
t
rr
- Reverse Recovery time - ns
di/dt =100 A/ s
V
GS
= 0
1.0
0.1
10
100
1000
1.0
10
100
1.0
1.5
20
V
DD
= 30 V
V
GS
= 10 V
R
G
= 10
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Q
g
-
Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
50
100
150
200
20
40
60
80
V
DD
= 48 V
I
D
= 50 A
2
4
6
8
10
12
14
16
V
GS
= 4 V
V
GS
= 10 V
4 V
V
GS
= 0
C
rss
C
oss
C
iss
t
r
t
d(on)
t
f
t
d(off)
V
GS
V
DS
0
2SK2498
6
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
L - Inductive Load - H
I
AS
- Single Avalanche Current - A
SINGLE AVALANCHE ENERGY
DERATING FACTOR
Starting T
ch
- Starting Channel Temperature - C
Energy Derating Factor - %
1.0
0
25
10
100
10
100
1 m
10 m
V
DD
= 30 V
V
GS
= 20 V
0
R
G
= 25
20
80
120
160
50
75
100
125
150
V
DD
= 30 V
R
G
= 25
V
GS
= 20 V
0
I
AS
< 50 A
100
60
40
140
E
AS
= 250 mJ
I
AS
= 50 A
0.1
2SK2498
7
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system.
TEI-1202
Quality grade on NEC semiconductor devices.
IEI-1209
Semiconductor device mounting technology manual.
IEI-1207
Semiconductor device package manual.
IEI-1213
Guide to quality assurance for semiconductor devices.
MEI-1202
Semiconductor selection guide.
MF-1134
Power MOS FET features and application switching power supply.
TEA-1034
Application circuits using Power MOS FET.
TEA-1035
Safe operating area of Power MOS FET.
TEA-1037
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the
rated voltage may be applied to this device.
2SK2498
8
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special:
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
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