1998,1999
MOS FIELD EFFECT TRANSISTOR
2SK2857
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
Document No. D11648EJ2V0DS00 (2nd edition)
Date Published March 1999 NS CP (K)
Printed in Japan
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
PACKAGE DRAWING (Unit : mm)
1
2
3
4.50.1
1.60.2
0.8MIN
.
2.50.1
4.00.25
0.42
0.42
0.06
0.06
0.06
1.5
3.0
1.50.1
0.41
+0.03
-0.05
0.47
DESCRIPTION
The 2SK2857 is a switching device which can be driven directly
by a 5V power source.
The 2SK2857 features a low on-state resistance and excellent
Switching Characteristics, and is suitable for applications such as
actuator driver.
FEATURES
Can be driven by a 5V power source.
Low On-state resistance :
R
DS(on)1
= 220 m
MAX. (V
GS
= 4 V, I
D
= 1.5 A)
R
DS(on)2
= 150 m
MAX. (V
GS
= 10 V, I
D
= 2.5 A)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain to Source Voltage V
DSS
60 V
Gate to Source Voltage V
GSS
20 V
Drain Current (DC) I
D(DC)
4 A
Drain Current (pulse)
Note1
I
D(pulse)
16 A
Total Power Dissipation
Note2
P
T
2
W
Channel Temperature T
ch
150 C
Storage Temperature T
stg
-
55 to +150 C
Notes1. PW
10
s, Duty Cycle
1 %
2. Mounted on ceramic board of 16 cm
2
0.7 mm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device is actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
EQUIVALENT CIRCUIT
Source
Internal
Diode
Gate
Protection
Diode
Gate
Drain
Electrode
Connection
1.Souce
2.Drain
3.Gate
The mark
shows major revised points.
Marking : NX
Data Sheet D11648EJ2V0DS00
2
2SK2857
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-off Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V
10
A
Gate Leakage Current
I
GSS
V
GS
= 20 V, V
DS
= 0 V
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.0
1.4
2.0
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 2 A
1
S
R
DS(on)1
V
GS
= 4 V, I
D
= 1.5 A
150
220
m
Drain to Source On-state Resistance
R
DS(on)2
V
GS
= 10 V, I
D
= 2.5 A
110
150
m
Input Capacitance
C
iss
265
pF
Output Capacitance
C
oss
125
pF
Reverse Transfer Capacitance
C
rss
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
56
pF
Turn-on Delay Time
t
d(on)
8
ns
Rise Time
t
r
11
ns
Turn-off Delay Time
t
d(off)
52
ns
Fall Time
t
f
V
DD
= 25 V, I
D
= 1 A
V
GS(on)
= 10 V, R
G
= 10
R
L
= 25
22
ns
Total Gate Charge
Q
G
10.6
nC
Gate to Source Charge
Q
GS
0.7
nC
Gate to Drain Charge
Q
GD
V
DS
= 48 V
V
GS
= 10 V
I
D
= 4 A
3.5
nC
Diode Forward Voltage
V
F(S-D)
I
F
= 4 A, V
GS
= 0 V
0.86
V
Reverse Recovery Time
t
rr
49
ns
Reverse Recovery Charge
Q
rr
I
F
= 4 A, V
GS
= 0 V
di/dt = 50 A /
s
26.6
nC
TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1 %
V
GS
Wave Form
I
D
Wave Form
V
GS
10 %
90 %
V
GS(on)
10 %
0
I
D
90 %
90 %
t
d(on)
t
r
t
d(off)
t
f
10 %
R
G
= 10
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
Data Sheet D11648EJ2V0DS00
3
2SK2857
TYPICAL CHARACTERISTICS (T
A
= 25C)
30
150
60
90
20
60
80
40
0
100
120
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Der
ating F
actor - %
T
A
- Ambient Temperature - C
FORWARD BIAS SAFE OPERATING AREA
10
100
I
D
- Drain Current - A
1
V
DS
- Drain to Source Voltage - V
100
10
1
0.1
PW
= 1 m
s
100 m
s
10
ms
R
DS(on)
Limited (@V
GS
= 1
0
V)
DC
T
A
= 25C
Single Pulse
Mounted on Ceramic
Board of 16cm x 0.7mm
2
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
0.4
1.6
2.0
0.8
1.2
0.4
1.2
1.6
0.8
0
2.0
6 V
4 V
V
GS
= 2 V
8 V
1
2
3
10
1
0.1
0.01
5
4
20
75C
T
A
= 125C
V
GS
- Gate to Sorce Voltage - V
25C
-
25C
V
DS
= 10 V
TRANSFER CHARACTERISTICS
I
D
- Drain Current - A
1
10
10
0.1
1
0.1
V
DS
= 10 V
20
20
25 C
75 C
125 C
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
T
A
=
-
25 C
FORWARD TRANSFER ADMMITTANCE Vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
1
0.1
10
20
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - m
0
T
A
= 125C
75C
-
25C
25C
80
120
160
200
240
40
V
GS
= 4 V
Data Sheet D11648EJ2V0DS00
4
2SK2857
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
1
0.1
10
20
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-State Resistance - m
0
T
A
= 125C
75C
-
25C
25C
80
120
160
200
240
40
V
GS
= 10 V
0
200
400
600
800
1000
2
4
6
8
10
12
14
16
R
DS (on)
- Drain to Source On-state Resistance - m
V
GS
- Gate to Source Voltage - V
I
D
= 2.5 A
1.5 A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1
10
100
1000
100
10
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
C
iss
, C
oss
, C
rss
- Capacitance - pF
V
DS
- Drain Source Voltage - V
C
iss
C
oss
C
rss
f = 1 MHz
0.1
1
10
I
D
- Drain Current - A
td
(on)
, tr, td
(off)
, tf - Swwitchig Time - ns
1000
100
10
0.1
td
(off)
td
(on)
tf
tr
SWITCHING CHARACTERISTICS
0.1
1
10
20
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
V
GS
= 0 V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
I
F
- Source to Drain Current - A
V
F(S-D)
- Source to Drain Voltage - V
Q
g
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
8
4
12
6
2
10
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
V
GS
V
DS
I
D
= 4 A
10
20
30
40
50
60
0
2
4
6
8
10
12
V
DD
= 12 V
30 V
48 V
Data Sheet D11648EJ2V0DS00
5
2SK2857
[MEMO]
Data Sheet D11648EJ2V0DS00
6
2SK2857
[MEMO]
Data Sheet D11648EJ2V0DS00
7
2SK2857
[MEMO]
2SK2857
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
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consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
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M7 98. 8
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