Document Outline
- COVER
- DESCRIPTION
- FEATURE
- ABSOLUTE MAXIMUM RATINGS (TA = 25 degree)
- PACKAGE DIMENSIONS
- ELECTRICAL CHARACTERISTICS (TA = 25 degree)
- ELECTRICAL REFERENCE (TA = 25 degree)
1997
DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2941
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D11007EJ1V0DS00 (1st edition)
Date Published May 1997 N
The information in this document is subject to change without notice.
DESCRIPTION
This product is n-Chanel MOS Field Effect Transistor designed high
current switching application.
FEATURE
Low On-Resistance
R
DS(on)1
= 14 m
Typ. (V
GS
= 10 V, I
D
=18 A)
R
DS(on)2
= 22 m
Typ. (V
GS
= 4 V, I
D
= 18 A)
Low C
iss
C
iss
= 1250 pF Typ.
Built-in G-S Protection Diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Maximum Voltages and Currents
Drain to Source Voltage
V
DSS
30
V
Gate to Source Voltage
V
GSS
20
V
Drain Current (DC)
I
D(DC)
35
A
Drain Current (Pulse)*
I
D(Pulse
)
140
A
Maximum Power Dissipation
Total Power Dissipation (T
A
= 25 C)
P
T
1.5
W
Total Power Dissipation (T
C
= 25 C)
P
T
60
W
Maximum Temperature
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to + 125
C
*
PW
10
s, Duty Cycle
1%
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device
acutally used, an addtional protection circuit is externally required if voltage exeeding the rated voltage may be applied to
this device.
1 2 3
4
10.6 MAX.
10.0
3.60.2
6.0 MAX.
12.7 MIN.
5.9 MIN.
15.5 MAX.
3.00.3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
JEDEC: TO-220AB
MP-25 (TO-220)
2.80.2
0.50.2
1.30.2
4.8 MAX.
1.30.2
0.750.1
2.54
2.54
Gate
Drain
Dody
Diode
Source
Gate Protection
Diode
PACKAGE DIMENSIONS
inmillimeters
2SK2941
2
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
CHARACTERISTIC
SYMBLO
MIN.
TYP.
MAX.
UNIT
TEST CONDITION
Drain to Source On-State
R
DS(on)1
14
20
m
V
GS
= 10 V, I
D
= 18 A
Resistance
R
DS(on)2
22
33
m
V
GS
= 4 V, I
D
= 18 A
Gate to Source Cutoff Voltage
V
GS(off)
1.0
1.5
2.0
V
V
DS
= 10 V, I
D
= 1 mA
Forward Transfer Admittance
I y
fs
I
8.0
25
S
V
DS
= 10 V, I
D
= 18 A
Drain Leakage Current
I
DDS
10
A
V
DS
= 30 V, V
GS
= 0
Gate to Source Leakage Current
I
GSS
10
A
V
GS
=
20 V, V
DS
= 0
Input Capacitance
C
iss
1250
pF
V
DS
= 10 V, V
GS
= 0, f =1 MHz
Output Capacitance
C
oss
900
pF
Reverse Transfer Capacitance
C
rss
460
pF
Turn-on Delay Time
t
d(on)
40
ns
I
D
= 18 A, V
GS(on)
= 10 V
Rise Time
t
r
430
ns
V
DD
= 15 V, R
G
= 10
Turn-off Delay Time
t
d(off)
160
ns
Fall Time
t
r
220
ns
Total Gate Charge
Q
G
50
nC
I
D
= 35 A, V
DD
= 24 V,
Gate to Source Charge
Q
GS
4.5
nC
V
GS
= 10 V
Gate to Drain Charge
Q
GD
21
nC
Body Diode Forward Voltage
V
F(S-D)
1.0
V
I
F
= 35 A, V
GS
= 0
Reverse Recovery Time
t
rr
65
ns
I
F
= 35 A, V
GS
= 0,
Reverse Recovery Charge
Q
rr
90
nC
di/dt = 100 A/
s
Test Circuit 1 Switching Time
Test Circuit 2 Gate Charge
D.U.T.
R
G
= 10
R
G
V
GS
Wave Form
t
t = 1 s
Duty Cycle
1 %
0
I
D
Wave Form
90 %
10 %
0
V
GS
I
D
0
10 %
10 %
90 %
90 %
t
on
t
off
V
GS(on)
R
L
V
DD
PG
V
GS
t
d(on)
t
r
t
f
t
d(off)
I
D
D.U.T.
R
L
V
DD
PG
50
I
G
= 2 mA
2SK2941
3
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
100
80
60
40
20
0
20
40
60
80
100
120
T
C
- Case Temperature - C
P
T
- Total Power Dissipation - W
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
DRAIN CURRENT vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
100
80
60
40
20
0
20
40
60
80
100
120
T
C
- Case Temperature - C
P
T
- Percentage of Rated Power - %
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
140 160
140 160
FORWARD BIAS SAFE OPERATING AREA
10
1
0.1
1
10
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
100
100
1000
I
D(Pulse)
I
D(DC)
PW = 1ms
10 ms
100 ms
DC
200 ms
Tc = 25 C
Single Pulse
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
th(t)
- Transient Thermal Resistance - C/
W
1 000
0.1
1
10
100
100m
1
10
100
1 000
10 000
1m 10m
200
160
120
80
40
0
0.5
1.0
1.5
V
GS
= 10 V
V
GS
= 4 V
Pulsed
R
th(ch-a)
= 83.3 (C/W)
R
th(ch-c)
= 2.08 (C/W)
Single Pulse
T
c
= 25 C
I
D
- Drain Current - A
2SK2941
4
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
2.0
1.5
1.0
0.5
0
T
ch
- Channel Temperature - C
V
GS(off)
- Gate to Source Cutoff Voltage - V
10
1
10
|y
fs
| - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE
vs. DRAIN CURRENT
I
D
- Drain Current - A
V
GS
= 0
f =1 MHz
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
1000
100
0.1
1
10
V
DS
- Drain to Source Voltage - V
C
rss
C
iss
C
iss
, C
oss
, C
rss
- Capacitance - pF
FORWARD TRANSFER CHARACTERISTICS
100
10
0
5
10
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
1000
50
0
50
100
150
V
DS
= 10 V
I
D
= 1 mA
100
1000
100
50
0
5
10
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On - State Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
I
D
= 7 A
18 A
35 A
Pulsed
R
DS(on)
- Drain to Source On - State resistance - m
DRAIN TO SOURCE ON - STATE RESISTANCE
vs. DRAIN CURRENT
I
D
- Drain Current - A
1
10
100
0
10
20
30
V
GS
= 4 V
V
GS
= 10 V
10 000
C
oss
100
V
DS
= 10 V
Pulsed
T
A
= 25 C
25 C
75 C
125 C
T
A
= 25 C
25 C
75 C
125 C
10
V
DS
= 10 V
Pulsed
2SK2941
5
DRAIN TO SOURCE ON-RESISTANCE vs.
CHANNEL TEMPERATURE
100
80
60
40
20
0
T
ch
- Channel Temperature - C
R
DS(on)
- Drain to Source On - State Resistance - m
50
0
50
100
150
I
D
= 18 A
V
GS
= 4 V
V
GS
= 10 V
SWITCHING CHARACTERISTICS
100
10
0.1
1
10
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
1000
V
DD
= 15 V
V
GS
=10 V
R
in
=10
t
r
t
f
t
d(off)
t
d(on)
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
30
20
10
0
Q
g
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
20
40
60
80
I
D
= 35 A
V
GS
V
DS
V
DD
= 24 V
15 V
6 V
I
SD
- Diode Dorward Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - V
0.4
0
1.0
10
100
0.1
0.8
1.2
1.6
2.0
2.4
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
0.1
1
10
I
D
- Drain Current - A
t
rr
- Reverse Recovery Diode - ns
1000
di/dt = 100 A/ s
V
GS
= 0
100
1
1000
100
V
GS
= 4V
V
GS
= 0V
Pulsed
Pulsed
1
16
14
12
10
8
6
4
2
0
V
GS
- Gate to Source Voltage - V
2SK2941
6
ELECTRICAL REFERENCE (T
A
= 25
C)
Ducument Name
Ducument No.
NEC semiconductor device reliability/quality control system
C11745E
Quality grade on NEC semiconductor devices
C11531E
Semiconductor device mounting technology manual
C10535E
Semiconductor device package manual
C10943X
Guide to quality assurance for semiconductor devices
MEI-1202
Application circuits using Power MOS FET
TEA-1035
Safe operating area of Power MOS FET
TEA-1037
2SK2941
7
[MEMO]
2SK2941
2
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special:
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific:
Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96.5
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