The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1997,2000
MOS FIELD EFFECT TRANSISTOR
2SK3060
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
D13099EJ3V0DS00 (3rd edition)
Date Published
April 2001 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK3060 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Low on-state resistance
R
DS(on)1
= 13 m
MAX. (V
GS
= 10
V, I
D
= 35
A)
R
DS(on)2
= 20 m
MAX. (V
GS
= 4.0
V, I
D
= 35
A)
Low C
iss
: C
iss
= 2400
pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
60
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS(AC)
20
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS(DC)
+20,
-
10
V
Drain Current (DC)
I
D(DC)
70
A
Drain Current (Pulse)
Note1
I
D(pulse)
210
A
Total Power Dissipation (T
C
= 25C)
P
T
70
W
Total Power Dissipation (T
A
= 25C)
P
T
1.5
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Single Avalanche Current
Note2
I
AS
35
A
Single Avalanche Energy
Note2
E
AS
122.5
mJ
Notes 1. PW
10
s, Duty cycle
1%
2. Starting T
ch
= 25C, V
DD
= 30 V, R
G
= 25
,
V
GS
= 20 V
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3060
TO-220AB
2SK3060-S
TO-262
2SK3060-ZJ
TO-263
2SK3060-Z
TO-220SMD
Note
Note This package is produced only in Japan.
(TO-220AB)
(TO-262)
(TO-263, TO-220SMD)
The mark
5
shows major revised points.
5
Data Sheet D13099EJ3V0DS
2
2SK3060
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
DS(on)1
V
GS
= 10
V, I
D
= 35
A
11
13
m
Drain to Source On-state Resistance
R
DS(on)2
V
GS
= 4.0
V, I
D
= 35
A
16
20
m
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
= 10
V, I
D
= 1
mA
1.0
1.5
2.0
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 35 A
15
50
S
Drain Leakage Current
I
DSS
V
DS
= 60
V, V
GS
= 0
V
10
A
Gate to Source Leakage Current
I
GSS
V
GS
=
20
V, V
DS
= 0
V
10
A
Input Capacitance
C
iss
2400
pF
Output Capacitance
C
oss
700
pF
Reverse Transfer Capacitance
C
rss
V
DS
= 10
V
V
GS
= 0
V
f = 1
MHz
280
pF
Turn-on Delay Time
t
d(on)
30
ns
Rise Time
t
r
600
ns
Turn-off Delay Time
t
d(off)
140
ns
Fall Time
t
f
I
D
= 35
A
V
GS
= 10
V
V
DD
= 30
V
R
G
= 10
450
ns
Total Gate Charge
Q
G
50
nC
Gate to Source Charge
Q
GS
7.5
nC
Gate to Drain Charge
Q
GD
I
D
= 70
A
V
DD
= 48
V
V
GS
= 10
V
18
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 70
A, V
GS
= 0
V
1.0
V
Reverse Recovery Time
t
rr
55
ns
Reverse Recovery Charge
Q
rr
I
F
= 70
A, V
GS
= 0
V
di/dt = 100
A
/
s
75
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
PG.
L
V
DD
V
GS
= 20
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1%
V
GS
Wave Form
I
D
Wave Form
V
GS
10%
90%
10%
0
I
D
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
5
Data Sheet D13099EJ3V0DS
3
2SK3060
TYPICAL CHARACTERISTICS (T
A
= 25C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
C
- Case Temperature -
C
dT - Percentage of Rated Power - %
0
25
50
75
100
125
150
175
200
20
40
60
80
100
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
T
C
- Case Temperature -
C
P
T
- Total Power Dissipation - W
0
25
50
75
100
125
150
175
200
140
120
100
80
60
40
20
FORWARD BIAS SAFE OPERATING AREA
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
1.0
0.1
10
100
1000
1.0
10
100
0.1
100
ms
T
C
= 25C
Single Pulse
R
DS(on)
Limited(@V
GS
= 10V)
P
W
= 10
s
100
s
1 ms
10
ms
I
D(DC)=
70 A
DC Dissipation Limited
I
D(pulse)=
210 A
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
th(t)
- Transient Thermal Resistance -
C/
W
100
0.01
0.1
1
10
1000
10000
1 m
10 m
100 m
1
10
100
1000
10
100
Single Pulse
R
th(ch-C)
= 1.79 C/W
R
th(ch-A)
= 83.3 C/W
5
Data Sheet D13099EJ3V0DS
4
2SK3060
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
0.1
1
10
100
0
1
2
3
4
5
Pulsed
V
DS
= 10 V
T
A
= 125C
75C
25C
-
25C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
0
1.0
1.5
2.0
200
250
0.5
Pulsed
V
GS
= 10 V
V
GS
= 4.0 V
150
100
50
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
|
y
fs
| - Forward Transfer Admittance - S
V
DS
= 10 V
Pulsed
0.1
1.0
1
10
100
10
100
0.1
T
ch
=
-
25C
25C
75C
125C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - m
0
20
10
30
20
10
Pulsed
I
D
= 35 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - m
50
1
0.1
75
10
100
1000
0
25
Pulsed
V
GS
= 10 V
V
GS
= 4.0 V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(off)
- Gate to Source Cut-off Voltage - V
V
DS
= 10 V
I
D
= 1 mA
-
50
0
50
100
150
0
1.0
2.0
1.5
0.5
Data Sheet D13099EJ3V0DS
5
2SK3060
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
R
DS(on)
- Drain to Source On-state Resistance -
m
0
-
50
10
0
50
100
150
I
D
= 35 A
20
40
30
V
GS
= 4.0 V
10 V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1.0
I
SD
- Diode Forward Current - A
0
1.5
V
SD
- Source to Drain Voltage - V
0.5
Pulsed
V
GS
= 10 V
0.1
1
10
100
1000
V
GS
= 0 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
10
0.1
100
1000
10000
1
10
100
V
GS
= 0 V
f = 1 MHz
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
0.1
10
100
1000
10000
1
10
100
V
DD
= 30 V
V
GS
= 10 V
R
G
= 10
t
d(off)
t
d(on)
t
r
t
f
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
F
- Drain Current - A
t
rr
- Reverse Recovery Time - ns
di/dt = 100 A /
V
GS
= 0 V
s
1
0.1
10
1
10
100
1000
100
V
GS
- Gate to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
20
40
60
80
20
10
50
40
30
2
4
6
8
0
V
DD
= 48 V
30 V
12 V
12
14
16
18
10
I
D
= 70 A
V
DS
V
GS
Data Sheet D13099EJ3V0DS
6
2SK3060
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
L - Inductive Load - H
I
AS
- Single Avalanche Current - A
1.0
10
100
1 m
10 m
R
G
= 25
V
DD
= 30 V
V
GS
= 20 V
0 V
Starting T
ch
= 25
C
I
AS
= 35 A
10
100
0.1
E
AS
= 122.5
mJ
SINGLE AVALANCHE ENERGY
DERATING FACTOR
Starting T
ch
- Starting Channel Temperature - C
Energy Derating Factor - %
25
50
75
100
160
140
120
100
80
60
40
20
0
125
150
V
DD
= 30 V
R
G
= 25
V
GS
= 20 V
0 V
I
AS
35 A
Data Sheet D13099EJ3V0DS
7
2SK3060
PACKAGE DRAWINGS (Unit : mm)
1)TO-220AB (MP-25)
2)TO-262 (MP-25 Fin Cut)
3)TO-263 (MP-25ZJ)
4)TO-220SMD (MP-25Z)
Note
EQUIVALENT CIRCUIT
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1 2 3
10.6 MAX.
10.0
3.60.2
4
3.00.3
1.30.2
0.750.1
2.54 TYP.
2.54 TYP.
5.9 MIN.
6.0 MAX.
15.5 MAX.
12.7 MIN.
1.30.2
0.50.2
2.80.2
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2
3
(10)
4
1.30.2
0.750.3
2.54 TYP.
2.54 TYP.
8.5
0.2
12.7 MIN.
1.30.2
0.50.2
2.80.2
1.00
.
5
(10)
1.40.2
1.00.5
2.54 TYP.
2.54 TYP.
8.50.2
1
2
3
5.70.4
4
2.80.2
4.8 MAX.
1.30.2
0.50.2
(0.5R)
(0.8R)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.70.2
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark
The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Note This package is produced only in Japan.
(10)
1.40.2
1.00.5
2.54 TYP.
2.54 TYP.
8.50.2
1
2
3
3.00.5
1.10.4
4
2.80.2
4.8 MAX.
1.30.2
0.50.2
(0.5R)
(0.8R)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1.00.3
5
2SK3060
M8E 00. 4
The information in this document is current as of April, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special":
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
PDF 
ZIP