1998,2000
MOS FIELD EFFECT TRANSISTOR
2SK3108
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D13331EJ1V0DS00 (1st edition)
Date Published January 2000 NS CP (K)
Printed in Japan
DATA SHEET
The mark
5
shows major revised points.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SK3108 is N channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
and designed for high voltage applications such as DC/DC
converter.
FEATURES
Gate voltage rating
30 V
Low on-state resistance
R
DS(on)
= 0.4
MAX. (V
GS
= 10 V, I
D
= 4.0 A)
Low input capacitance
C
iss
= 400 pF TYP. (V
DS
= 10 V, V
GS
= 0 V)
Avalanche capability rated
Built-in gate protection diode
Isolated TO-220 package
ABSOLUTE MAXIMUM RATING (T
A
= 25
C
)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
200
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
30
V
Drain Current(DC) (T
C
= 25C)
I
D(DC)
8.0
A
Drain Current(pulse)
Note1
I
D(pulse)
24
A
Total Power Dissipation (T
A
= 25C)
P
T1
2.0
W
Total Power Dissipation (T
C
= 25C)
P
T2
25
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
-
55 to +150
C
Single Avalanche Current
Note2
I
AS
8.0
A
Single Avalanche Energy
Note2
E
AS
51
mJ
Note1. PW
10
s, Duty Cycle
1%
2. Starting T
ch
= 25C, V
DD
= 100 V, R
G
= 25
, V
GS
= 20 V
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3108
Isolated TO-220
Data Sheet D13331EJ1V0DS00
2
2SK3108
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Drain Leakage Current
I
DSS
V
DS
= 200 V, V
GS
= 0 V
100
A
Gate Leakage Current
I
GSS
V
GS
=
30 V, V
DS
= 0 V
10
A
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
2.5
4.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 4.0 A
1.5
S
Drain to Source On-state Resistance R
DS(on)
V
GS
= 10 V, I
D
= 4.0 A
0.32
0.4
Input Capacitance
C
iss
V
DS
= 10 V
400
pF
Output Capacitance
C
oss
V
GS
= 0 V
110
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
55
pF
Turn-on Delay Time
t
d(on)
V
DD
= 100 V, I
D
= 4.0 A
12
ns
Rise Time
t
r
V
GS(on)
= 10 V
25
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
40
ns
Fall Time
t
f
20
ns
Total Gate Charge
Q
G
V
DD
= 160 V
18
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
3.5
nC
Gate to Drain Charge
Q
GD
I
D
= 8.0 A
10
nC
Diode Forward Voltage
V
F(S-D)
I
F
= 8.0 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 8.0 A, V
GS
= 0 V
250
ns
Reverse Recovery Charge
Q
rr
di/dt = 50 A/
s
1.0
C
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
0 V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
= 1
s
Duty Cycle
1 %
V
GS
Wave Form
I
D
Wave Form
V
GS
I
D
10 %
0
0
90 %
90 %
90 %
V
GS(on)
I
D
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10 %
10 %
5
Data Sheet D13331EJ1V0DS00
3
2SK3108
TYPICAL CHARACTERISTICS (T
A
= 25C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
-
Drain to Source Voltage - V
I
D
- Drain Current - A
30
25
20
15
10
5
0
Pulsed
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
V
GS
= 10 V
V
GS
= 30 V
FORWARD TRANSFER CHARACTERISTICS
V
GS
-
Gate to Source Voltage - V
I
D
- Drain Current - A
100
10
1
0.1
0.01
0.001
Pulsed
0
V
DS
= 10 V
1 2 3 4 5 6 7 8 9 10 11 12
T
ch
=125C
75C
25C
-25C
13 14 15 16
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(off)
- Gate to Source Cut-off Voltage - V
V
DS
= 10 V
I
D
= 1 mA
-
50
50
100
0
150
5.0
4.5
4.0
3.5
3.0
2.5
2.0
-
25
25
75
125
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
|y
fs
| - Forward Transfer Admittance - s
0.1
10
1
0.1
0.01
1
100
0.01
10
V
DS
=10 V
Pulsed
T
ch
= -25C
T
ch
= 25C
T
ch
= 75C
T
ch
= 125C
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance -
1.0
0.8
0.6
0.4
0.2
0
0
2
4
6
8
10 12
14
16
18
20
I
D
=
8.0
A
4.0 A
1.6 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance -
1
10
100
Pulsed
1.0
0.8
0.6
0.4
0.2
0
0.1
V
GS
= 10 V
V
GS
= 30 V
5
Data Sheet D13331EJ1V0DS00
4
2SK3108
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
R
DS(on)
- Drain to Source On-state Resistance -
1.2
1.0
0.8
0.6
0.4
0.2
0
-
50
50
100
0
150
-
25
25
75
125
I
D
= 4.0 A
V
GS
= 10 V
Pulsed
I
D
= 8.0 A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - V
I
SD
- Diode Forward Current - A
0.0
100
10
1
0.1
0.4
1.0
1.2
Pulsed
0.2
0.6
0.8
1.4
1.6
V
GS
= 10 V
V
GS
= 0 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
0.1
10
100
1000
1
10
100
V
GS
= 0 V
f = 1 MHz
10000
1000
C
oss
C
rss
C
iss
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
0.1
1000
100
10
1
1
10
100
V
DD
= 100 V
V
GS
= 10 V
R
G
= 10
t
r
t
f
t
d(off)
t
d(on)
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
D
- Drain Current - A
t
rr
- Reverse Recovery Time - ns
1
0.1
10
1
10
100
1000
100
di/dt = 50A /
V
GS
= 0 V
s
V
GS
- Gate to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
5
10
15
20
200
150
100
50
0
2
4
6
0
I
D
= 8.0 A
V
DD
= 160 V
100 V
40 V
V
DD
= 160 V
100 V
40 V
8
10
12
14
16
Data Sheet D13331EJ1V0DS00
5
2SK3108
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
C
- Case Temperature - C
dT - Percentage of Rated Power - %
0
20
40
60
80
100
120
140
160
20
40
60
80
100
0
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
T
C
- Case Temperature - C
P
T
- Total Power Dissipation - W
0
20
40
60
80
100
120
140
160
40
30
20
10
0
FORWARD BIAS SAFE OPERATING AREA
V
DS -
Drain to Source Voltage - V
I
D
- Drain Current - A
0.1
1
1
10
100
10
100
1000
T
C
= 25 C
Single Pulse
R
DS(on)
Limited
100 ms
Power Dissipation Limited
3 ms
10 ms
1 ms
100
s
PW = 10
s
I
D(pulse)
I
D(DC)
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
th
(t) - Transient Thermal Resistance - C/
W
10
0.01
0.1
1
100
1 000
1 m
10 m
100 m
1
10
100
1 000
Single Pulse
10
100
R
th(ch-A)
= 62.5C/W
R
th(ch-C)
= 5C/W
Data Sheet D13331EJ1V0DS00
6
2SK3108
SINGLE AVALANCHE ENERGY vs.
INDUCTIVE LOAD
L
- Inductive Load - mH
I
AS
- Single Avalanche Energy - A
0.1
1
10
100
10
1
0.01
V
DD
= 100 V
V
GS
= 20 V 0 V
R
G
= 25
Starting T
ch
= 25C
I
AS
= 8.0 A
E
AS
= 51 mJ
SINGLE AVALANCHE ENERGY
DERATING FACTOR
Starting T
ch
- Starting Channel Temperature - C
Energy Defrating Factor - %
50
75
100
100
80
60
40
20
0
25
V
DD
= 100 V
V
GS
= 20 V 0 V
R
G
= 25
I
AS
8.0 A
125
150
Data Sheet D13331EJ1V0DS00
7
2SK3108
PACKAGE DRAWING(Unit : mm)
Isolated TO-220 (MP-45F)
1.Gate
2.Drain
3.Source
10.00.3
3.20.2
15.00.3
30.1
12.00.2
13.5 MIN.
40.2
0.70.1
1.30.2
1.50.2
2.54 TYP.
2.54 TYP.
1 2 3
2.50.1
0.650.1
4.50.2
2.70.2
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
EQUIVALENT CIRCUIT
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
2SK3108
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
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rights of third parties by or arising from use of a device described herein or any other liability arising from use
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parties arising from the use of these circuits, software, and information.
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the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
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"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
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The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
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M7 98. 8
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