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1998, 2000
MOS FIELD EFFECT TRANSISTOR
2SK3109
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D13332EJ1V0DS00 (1st edition)
Date Published January 2000 NS CP (K)
Printed in Japan
DATA SHEET
The mark
5
shows major revised points.
DESCRIPTION
The 2SK3109 is N channel MOS FET device that
features a low on-state resistance and excellent
switching characteristics, and designed for high voltage
applications such as DC/DC converter.
FEATURES
Gate voltage rating 30 V
Low on-state resistance
R
DS(on)
= 0.4
MAX. (V
GS
= 10 V, I
D
= 5.0 A)
Low input capacitance
C
iss
= 400 pF TYP. (V
DS
= 10 V, V
GS
= 0 V)
Avalanche capability rated
Built-in gate protection diode
Surface mount device available
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain to source voltage (V
GS
= 0 V)
V
DSS
200
V
Gate to source voltage (V
DS
= 0 V)
V
GSS
30
V
Drain current (DC) (T
C
= 25 C)
I
D(DC)
10
A
Drain current (pulse)
Note1
I
D(pulse)
30
A
Total power dissipation (T
A
= 25 C)
P
T1
1.5
W
Total power dissipation (T
C
= 25 C)
P
T2
50
W
Channel temperature
T
ch
150
C
Storage temperature
T
stg
-
55 to +150
C
Single avalanche current
Note2
I
AS
10
A
Single avalanche energy
Note2
E
AS
35
mJ
Notes 1. PW
10
s, Duty Cycle
1 %
2. Starting T
ch
= 25 C, V
DD
= 100 V, R
G
= 25
, V
GS
= 20 V
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3109
TO-220AB
2SK3109-S
TO-262
2SK3109-ZJ
TO-263
Data Sheet D13332EJ1V0DS00
2
2SK3109
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Drain Leakage Current
I
DSS
V
DS
= 200 V, V
GS
= 0 V
100
A
Gate Leakage Current
I
GSS
V
GS
=
30 V, V
DS
= 0 V
10
A
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
2.5
4.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 5.0 A
1.5
S
Drain to Source On-state Resistance
R
DS(on)
V
GS
= 10 V, I
D
= 5.0 A
0.32
0.4
Input Capacitance
C
iss
V
DS
= 10 V
400
pF
Output Capacitance
C
oss
V
GS
= 0 V
110
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
55
pF
Turn-on Delay Time
t
d(on)
V
DD
= 100 V
12
ns
Rise Time
t
r
I
D
= 5.0 A
34
ns
Turn-off Delay Time
t
d(off)
V
GS(on)
= 10 V
40
ns
Fall Time
t
f
R
G
= 10
20
ns
Total Gate Charge
Q
G
V
DD
= 160 V
18
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
3.5
nC
Gate to Drain Charge
Q
GD
I
D
= 10 A
10
nC
Diode Forward Voltage
V
F(S-D)
I
F
= 10 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 10 A, V
GS
= 0 V
250
ns
Reverse Recovery Charge
Q
rr
di/dt = 50 A/
s
1.0
C
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
PG
L
V
DD
V
GS
= 20
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1 %
V
GS
Wave Form
I
D
Wave Form
V
GS
10 %
90 %
V
GS
(on)
10 %
0
I
D
90 %
90 %
t
d(on)
t
r
t
d(off)
t
f
10 %
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
5
Data Sheet D13332EJ1V0DS00
3
2SK3109
TYPICAL CHARACTERISTICS (T
A
= 25 C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
10
20
30
25
5
0
Pulsed
10
15
20
30
35
0
V
GS
= 10 V
V
GS
= 30 V
40
50
0.01
0
0.1
1
10
4
12
0.001
100
V
DS
= 10 V
Pulsed
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
8
16
T
ch
= 125
C
75
C
25
C
-
25
C
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(off)
- Gate to Source Cut-off Voltage - V
V
DS
=
10
V
I
D
=
1
mA
-
50
0
150
50
2.0
2.5
100
3.0
3.5
4.0
4.5
5.0
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
|y
fs
| - Forward Transfer Admittance - S
I
D
- Drain Current - A
1
1
10
10
100
V
DS
= 10 V
Pulsed
T
ch
=
-
25 C
25 C
75 C
125 C
0.01
0.1
0.01
0.1
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance -
0
8
0.1
10
16
0.3
0.2
0.4
0.5
0
20
2
4
6
12
14
18
0.6
0.7
0.8
0.9
1.0
I
D
= 10 A
5 A
2 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance -
1.2
0.8
0.6
0.2
10
100
0.1
0
1
Pulsed
V
GS
= 10 V
0.4
1.0
1.4
V
GS
= 30 V
5
Data Sheet D13332EJ1V0DS00
4
2SK3109
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
150
R
DS (on)
- Drain to Source On-state Resistance -
0.4
0
0
100
-
50
T
ch
- Channel Temperature - C
0.6
0.2
V
GS
= 10 V
Pulsed
I
D
= 5 A
0.8
1.0
1.2
I
D
= 10 A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - V
I
SD
- Diode Forward Current - A
0.0
0.1
1
10
0.5
1.0
1.5
100
V
GS
= 10 V
0 V
Pulsed
2.0
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
0.1
100
1000
1
10
100
V
GS
=
0
V
f
=
1
MHz
C
iss
C
oss
C
rss
10
10000
1000
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
1
0.1
10
100
1000
1
10
100
V
DD
=
100 V
V
GS
=
10 V
R
G
=
10
t
d(off)
t
d(on)
t
r
t
f
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
D
- Drain Current - A
t
rr
- Reverse Recovery Time - ns
0.1
10
1
10
100
100
di/dt
=
50
A/
s
V
GS
=
0
V
1
1000
V
GS
- Gate to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
5
10
15
20
50
100
150
200
2
4
6
8
0
10
12
14
16
0
V
GS
V
DS
I
D
= 10 A
V
DD
= 160 V
100 V
40 V
Data Sheet D13332EJ1V0DS00
5
2SK3109
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
C
- Case Temperature - C
dT - Percentage of Rated Power - %
0
20
40
60
80
100
120
140
160
20
40
60
80
100
0
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
T
C
- Case Temperature - C
P
T
- Total Power Dissipation - W
0
20
40
60
80
100
120
140
160
70
60
50
40
30
20
10
0
FORWARD BIAS SAFE OPERATING AREA
10
100
1000
I
D
- Drain Current - A
1
V
DS
- Drain to Source Voltage - V
100
10
1
0.1
100
s
1 ms
PW
= 10
s
R
DS(on)
Limited
I
D(pulse)
I
D(DC)
3 ms
Po
wer Dissipation Limited
T
C
= 25 C
Single Pulse
10 ms
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
th
(t) - Transient Thermal Resistance - C/
W
1
0.01
0.1
10
100
1m
10m
100m
1
10
1000
100
100
Single Pulse
10
R
th(ch-A)
= 83.3 C/W
R
th(ch-C)
= 2.5 C/W
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