1998
MOS FIELD EFFECT TRANSISTOR
2SK3114
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
D13337EJ2V0DS00 (2nd edition)
Date Published
January 2001 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The mark 5 shows major revised points.
DESCRIPTION
The 2SK3114 is N-channel DMOS FET device that features a
low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
Low on-state resistance:
R
DS(on)
= 2.2
MAX. (V
GS
= 10
V, I
D
= 2.0 A)
Low gate charge:
Q
G
= 15 nC TYP. (V
DD
= 450
V, V
GS
= 10
V, I
D
= 4.0 A)
Gate voltage rating:
30 V
Avalanche capability ratings
Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
600
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
30
V
Drain Current (DC) (T
C
= 25C)
I
D(DC)
4.0
A
Drain Current (pulse)
Note1
I
D(pulse)
16
A
Total Power Dissipation (T
C
= 25C)
P
T1
30
W
Total Power Dissipation (T
A
= 25C)
P
T2
2.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Single Avalanche Current
Note2
I
AS
4.0
A
Single Avalanche Energy
Note2
E
AS
10.7
mJ
Notes 1. PW
10
s, Duty cycle
1%
2. Starting T
ch
= 25C, V
DD
= 150 V, R
G
= 25
,
V
GS
= 20
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3114
Isolated TO-220
5
(Isolated TO-220)
Data Sheet D13337EJ2V0DS
2
2SK3114
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 600
V, V
GS
= 0
V
100
A
Gate Leakage Current
I
GSS
V
GS
= 30
V, V
DS
= 0
V
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10
V, I
D
= 1
mA
2.5
3.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10
V, I
D
= 2.0
A
1.0
50
S
Drain to Source On-state Resistance
R
DS(on)
V
GS
= 10
V, I
D
= 2.0
A
1.6
2.2
Input Capacitance
C
iss
V
DS
= 10
V
550
pF
Output Capacitance
C
oss
V
GS
= 0
V
115
pF
Reverse Transfer Capacitance
C
rss
f = 1
MHz
13
pF
Turn-on Delay Time
t
d(on)
V
DD
= 150
V, I
D
= 2.0
A
12
ns
Rise Time
t
r
V
GS(on)
= 10
V
6
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
35
ns
Fall Time
t
f
R
L
= 10
12
ns
Total Gate Charge
Q
G
V
DD
= 450
V
15
nC
Gate to Source Charge
Q
GS
V
GS
= 10
V
4
nC
Gate to Drain Charge
Q
GD
I
D
= 4.0
A
4.4
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 4.0
A, V
GS
= 0
V
0.9
V
Reverse Recovery Time
t
rr
I
F
= 4.0
A, V
GS
= 0
V
1.3
s
Reverse Recovery Charge
Q
rr
di/dt = 50
A/
s
4.3
C
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
PG.
L
V
DD
V
GS
= 20
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1%
V
GS
Wave Form
I
D
Wave Form
V
GS
10%
90%
V
GS
(on)
10%
0
I
D
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
Data Sheet D13337EJ2V0DS
3
2SK3114
TYPICAL CHARACTERISTICS (T
A
= 25C
)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
ch
- Channel Temperature - C
dT - Percentage of Rated Power - %
0
40
20
60
100
140
80
120
160
100
80
60
40
20
0
T
C
- Case Temperature - C
P
T
- Total Power Dissipation - W
0
80
20
40
60
100
140
120
160
40
30
20
10
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
FORWARD BIAS SAFE OPERATING AREA
10
100
1 000
I
D
- Drain Current - A
1
V
DS
- Drain to Source Voltage - V
100
10
1
0.1
Po
wer Dissipation Limited
100
m
s
10
ms
1 ms
100
m
s
PW
= 10
m
s
R
D
(on) Limited
I
D
(pulse)
I
D
(DC)
3 ms
T
C
= 25C
Single Pulse
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
rth
(t)
- Transient Thermal Resistance -
C/
W
100m
1
10
100
1 000
10m
1m
100
m
10
m
100
10
1
0.1
0.01
R
th(CH-A)
= 62.5 C/W
R
th(CH-C)
= 4.17 C/W
Single Pulse
Data Sheet D13337EJ2V0DS
4
2SK3114
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
10
40
20
30
5
10
0
6 V
V
GS
= 10 V
8 V
Pulsed
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
15
10
5
0
100
10
1.0
0.1
V
DS
= 10V
Pulsed
Tch = 125 C
75 C
25 C
-25 C
GATE TO SOURCE CUTOFF VOLTAGE
vs. CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(off)
- Gate to Source Cutoff Voltage - V
-50
0
50
100
150
5.0
4.0
3.0
2.0
1.0
0
V
DS
= 10 V
I
D
= 1 mA
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1.0
10
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
10
0.1
1.0
0.1
V
DS
= 10 V
Pulsed
T
ch
= -25 C
25 C
75 C
125 C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
2.0
V
GS
- Gate to Source Voltage - V
R
DS (on)
- Drain to Source On-State Resistance -
9
1.0
0
5
15
0
3.0
I
D
= 4.0 A
Pulsed
2.0 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
1.0
1.0
10
100
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-State Resistance -
9
2.0
0
3.0
V
GS
= 10 V
Pulsed
V
GS
= 20 V
Data Sheet D13337EJ2V0DS
5
2SK3114
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
150
R
DS (on)
- Drain to Source On-State Resistance -
9
2.0
0
0
100
-50
T
ch
- Channel Temperature - C
3.0
1.0
V
GS
= 10 V
Pulsed
4.0
2.0 A
I
D
= 4.0 A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - V
I
SD
- Diode Forward Current - A
1.5
1.0
0.5
0
100
10
1.0
0.1
Pulsed
0 V
V
GS
= 10 V
100
10
1
0.1
10 000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
C
iss
, C
oss
, C
rss
- Capacitance - pF
1 000
100
10
1
V
GS
=
0 V
f = 1 MH
Z
C
iss
C
oss
C
rss
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
0.1
1
10
I
D
- Drain Current - A
td
(on)
,
tr,
td
(off)
,
tf
-
Switching
Time
-
ns
100
10
1
0.1
V
DD
=
150
V
V
GS
= 10
V
R
G
=
10
9
td(off)
td(on)
tf
tr
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
0.1
1
10
t
rr
- Reverse Recovery Time - ns
0.01
I
D
- Drain Current - A
10 000
1 000
100
10
di/dt = 50 A/
m
S
V
GS
= 0 V
Q
g
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
8
4
12
16
600
400
200
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
16
14
12
10
8
6
4
2
0
V
GS
V
DS
I
D
= 4 A
V
DD
= 450 V
300 V
150 V
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