1998
MOS FIELD EFFECT TRANSISTOR
2SK3116
SWITCHING
N-CHANNEL POWER MOS FET
Document No. D13339EJ2V0DS00 (2nd edition)
Date Published May 2002 NS CP (K)
Printed in Japan
DATA SHEET
The mark
5
shows major revised points.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SK3116 is N-channel DMOS FET device that features a
low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
Low gate charge
Q
G
= 26 nC TYP. (I
D
= 7.5 A, V
DD
= 450 V, V
GS
= 10 V)
Gate voltage rating
30 V
Low on-state resistance
R
DS(on)
= 1.2
MAX. (V
GS
= 10 V, I
D
= 3.75 A)
Avalanche capability ratings
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C
)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
600
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
30
V
Drain Current (DC)
I
D(DC)
7.5
A
Drain Current (pulse)
Note1
I
D(pulse)
30
A
Total Power Dissipation (T
A
= 25C)
P
T1
1.5
W
Total Power Dissipation (T
C
= 25C)
P
T2
70
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
-
55 to +150
C
Single Avalanche Current
Note2
I
AS
7.5
A
Single Avalanche Energy
Note2
E
AS
37.5
mJ
Diode Recovery dv/dt
Note3
dv/dt
3.5
V/ns
Notes 1. PW
10
s, Duty Cycle
1%
2. Starting T
ch
= 25C, V
DD
= 150 V, R
G
= 25
, V
GS
= 20
0 V
3. I
F
3.0 A, V
clamp
= 600 V, di/dt
100 A/
s, T
A
= 25C
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3116
TO-220AB
2SK3116-S
TO-262
2SK3116-ZJ
TO-263
Data Sheet D13339EJ2V0DS
2
2SK3116
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHRACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 600 V, V
GS
= 0 V
100
A
Gate Leakage Current
I
GSS
V
GS
=
30 V, V
DS
= 0 V
100
nA
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
2.5
3.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 3.75 A
2.0
S
Drain to Source On-state Resistance
R
DS(on)
V
GS
= 10 V, I
D
= 3.75 A
0.9
1.2
Input Capacitance
C
iss
V
DS
= 10 V
1100
pF
Output Capacitance
C
oss
V
GS
= 0 V
200
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
20
pF
Turn-on Delay Time
t
d(on)
V
DD
= 150 V, I
D
= 3.75 A
18
ns
Rise Time
t
r
V
GS
= 10 V
15
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
50
ns
Fall Time
t
f
R
L
= 50
15
ns
Total Gate Charge
Q
G
V
DD
= 450 V
26
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
6
nC
Gate to Drain Charge
Q
GD
I
D
= 7.5 A
10
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 7.5 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
T
rr
I
F
= 7.5 A, V
GS
= 0 V
1.6
s
Reverse Recovery Charge
Q
rr
di/dt = 50 A/
s
7.6
C
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
0 V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
R
G
= 10
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
= 1
s
Duty Cycle
1%
V
GS
Wave Form
I
D
Wave Form
V
GS
I
D
10%
0
0
90%
90%
90%
V
GS
I
D
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
Data Sheet D13339EJ2V0DS
3
2SK3116
TYPICAL CHARACTERISTICS (T
A
= 25C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
10
40
20
30
5
15
20
10
0
25
6 V
V
GS
= 10 V
8 V
Pulsed
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
15
10
5
0
100
10
1.0
0.1
V
DS
= 10 V
Pulsed
T
ch
= 125C
75C
T
ch
= 25C
-
25C
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(off)
- Gate Cut-off Voltage - V
-
50
0
50
100
150
5.0
4.0
3.0
2.0
1.0
0
V
DS
= 10 V
I
D
= 1 mA
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1.0
10
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
10
0.1
1.0
0.1
V
DS
= 10 V
Pulsed
T
ch
=
-
25C
25C
75C
125C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
2.0
V
GS
- Gate to Source Voltage - V
R
DS (on)
- Drain to Source On-State Resistance -
1.0
0
5
15
0
3.0
Pulsed
I
D
= 4.0 A
7.5 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
1.0
1.0
10
100
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-State Resistance -
2.0
0
3.0
V
GS
= 10 V
20 V
Pulsed
Data Sheet D13339EJ2V0DS
4
2SK3116
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
150
R
DS (on)
- Drain to Source On-State Resistance -
2.0
0
0
100
-
50
T
ch
- Channel Temperature - C
3.0
1.0
V
GS
= 10 V
4.0
4.0 A
Pulsed
I
D
= 7.5 A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - V
I
SD
- Diode Forward Current - A
1.5
1.0
0.5
0
100
10
1.0
0.1
Pulsed
0 V
V
GS
= 10 V
1000
100
10
1.0
10000
1000
100
10
1
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
C
iss
, C
oss
, C
rss
- Capacitance - pF
C
iss
C
oss
C
rss
V
GS
= 0 V
f = 1 MHz
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
0.1
1
10
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
100
10
1
0.1
V
DD
=
150
V
V
GS
= 10
V
R
G
=
10
t
d(off)
t
d(on)
t
f
t
r
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1.0
10
100
t
rr
- Reverse Recovery Time - ns
0.1
I
D
- Drain Current - A
10000
1000
100
10
di/dt = 50 A/
s
V
GS
= 0 V
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
12
8
20
32
600
400
200
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
16
14
12
10
8
6
4
2
0
I
D
= 7.5 A
V
GS
V
DD
= 450 V
300 V
150 V
V
DS
Data Sheet D13339EJ2V0DS
5
2SK3116
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
C
- Case Temperature - C
dT - Percentage of Rated Power - %
0
40
20
60
100
140
80
120
160
100
80
60
40
20
0
T
C
- Case Temperature - C
P
T
- Total Power Dissipation - W
0
80
20
40
60
100
140
120
160
80
60
40
20
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
10
30
50
70
FORWARD BIAS SAFE OPERATING AREA
10
100
1000
I
D
- Drain Current - A
1
V
DS
- Drain to Source Voltage - V
100
10
1
0.1
Po
wer Dissipation Limited
100
s
10
m
s
1 ms
100
ms
PW
= 10
s
I
D(pulse)
I
D(DC)
3 ms
30 ms
T
C
= 25C
Single Pulse
DC
R
DS(on)
Limited
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
th(t)
- Transient Thermal Resistance -
C/
W
100 m
1
10
100
1000
10 m
1 m
100
10
100
10
1
0.1
0.01
R
th(ch-A)
= 83.3C/W
R
th(ch-C)
= 1.79C/W
5
5
5
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