The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1998
MOS FIELD EFFECT TRANSISTOR
2SK3221
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No.
D13789EJ1V0DS00 (1st edition)
Date Published
June 2002 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK3221 is N-channel DMOS FET device that features a
low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
Low gate charge
Q
G
= 9 nC TYP. (V
DD
= 450 V, V
GS
= 10 V, I
D
= 2.0 A)
Gate voltage rating
30
V
Low on-state resistance
R
DS(on)
= 4.4
MAX. (V
GS
= 10 V, I
D
= 1.0 A)
Avalanche capability ratings
Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
600
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
30
V
Drain Current (DC) (T
C
= 25C)
I
D(DC)
2.0
A
Drain Current (pulse)
Note1
I
D(pulse)
8.0
A
Total Power Dissipation (T
A
= 25C)
P
T1
2.0
W
Total Power Dissipation (T
C
= 25C)
P
T2
25
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Single Avalanche Current
Note2
I
AS
2.0
A
Single Avalanche Energy
Note2
E
AS
2.7
mJ
Diode Recovery dv/dt
Note3
dv/dt
3.5
V/ns
Notes 1. PW
10
s, Duty Cycle
1%
2. Starting T
ch
= 25C, V
DD
= 150
V, R
G
= 25
, V
GS
= 20
0 V
3. I
F
1.0 A, V
clamp
= 600
V, di/dt
100 A/
s, T
A
= 25C
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3211
Isolated TO-220
Data Sheet D13789EJ1V0DS
2
2SK3221
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 600 V, V
GS
= 0 V
100
A
Gate Leakage Current
I
GSS
V
GS
=
30 V, V
DS
= 0 V
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
2.5
3.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 1.0 A
0.5
S
Drain to Source On-state Resistance
R
DS(on)
V
GS
= 10 V, I
D
= 1.0 A
3.3
4.4
Input Capacitance
C
iss
V
DS
= 10 V
290
pF
Output Capacitance
C
oss
V
GS
= 0 V
60
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
5
pF
Turn-on Delay Time
t
d(on)
V
DD
= 150 V, I
D
= 1.0 A
7
ns
Rise Time
t
r
V
GS
= 10 V
2
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
20
ns
Fall Time
t
f
10
ns
Total Gate Charge
Q
G
V
DD
= 450 V
9
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
2.4
nC
Gate to Drain Charge
Q
GD
I
D
= 2.0 A
2
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 2.0 A, V
GS
= 0 V
0.9
V
Reverse Recovery Time
t
rr
I
F
= 2.0 A, V
GS
= 0 V
0.9
s
Reverse Recovery Charge
Q
rr
di/dt = 50 A/
s
2.0
C
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
PG.
L
V
DD
V
GS
= 20
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
R
G
= 10
0
V
GS
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1%
V
GS
Wave Form
I
D
Wave Form
V
GS
10%
90%
V
GS
10%
0
I
D
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
Data Sheet D13789EJ1V0DS
3
2SK3221
TYPICAL CHARACTERISTICS (T
A
= 25C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT - P
e
rc
ent
age of
Rat
ed P
o
w
e
r - %
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
C
P
T
- Tot
a
l
P
o
w
e
r Di
s
s
i
pat
i
on - W
0
5
10
15
20
25
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
C
FORWARD BIAS SAFE OPERATING AREA
I
D
- Drai
n Current
- A
0.01
0.1
1
10
100
1
10
100
1000
1 ms
10ms
I
D(DC)
= 2.0 A
R
DS(on)
Limited
(V
GS
= 20 V)
100 ms
Power Dissipation Limited
PW = 100
s
I
D(Pulse)
= 8.0 A
T
C
= 25C
Single Pulse
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th
- Trans
i
ent
Therm
a
l
Res
i
s
t
anc
e -
C/
W
0.1
1
10
100
R
th(j-A)
= 62.5C/W
R
th(j-C)
= 5.0C/W
Single Pulse
PW - Pulse Width - s
1 m
10 m
100 m
1
10
100
1000
Data Sheet D13789EJ1V0DS
4
2SK3221
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
- Drai
n Current
- A
10
40
20
30
1
3
4
2
0
0
5
6 V
V
GS
= 10 V
8 V
Pulsed
V
DS
- Drain to Source Voltage - V
I
D
- Drai
n Current
- A
15
10
5
0
100
10
1
0.1
V
DS
= 10 V
Pulsed
T
ch
= 125
C
75
C
T
ch
= 25
C
-
25
C
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
S
(
o
ff)
- Gat
e
Cut
-
of
f
V
o
l
t
age - V
-
50
0
50
100
150
5
4
3
2
1
0
V
DS
= 10 V
I
D
= 1 mA
T
ch
- Channel Temperature -
C
| y
fs
| - Forw
ard Trans
f
e
r A
d
m
i
t
t
anc
e - S
0.1
1
10
0.01
0.1
1
10
100
V
DS
= 10 V
Pulsed
T
ch
=
-
25
C
25
C
75
C
125
C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e -
10
5
1
0
5
15
0
Pulsed
I
D
= 2.0 A
1.0 A
2
3
4
6
7
V
GS
- Gate to Source Voltage - V
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e -
0.1
1
10
0
V
GS
= 10 V
20 V
Pulsed
1
2
3
4
5
6
7
I
D
- Drain Current - A
Data Sheet D13789EJ1V0DS
5
2SK3221
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
50
150
2
0
0
100
-
50
3
1
V
GS
= 10 V
4
1.0 A
6
7
5
8
9
I
D
= 2.0 A
T
ch
- Channel Temperature - C
I
F
- Di
ode Forw
ard Current
- A
1.5
1
0.5
0
100
10
1
0.1
Pulsed
0 V
V
GS
= 10 V
V
F(S-D)
- Source to Drain Voltage - V
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e -
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
C
is
s
, C
os
s
, C
rs
s
- Capac
i
t
anc
e - pF
100
10
1
0.1
10000
1000
100
10
1
C
iss
C
oss
C
rss
V
GS
= 0 V
f = 1 MHz
V
DS
- Drain to Source Voltage - V
t
d(
on)
, t
r
, t
d(
of
f
)
, t
f
- S
w
i
t
c
h
i
ng Ti
m
e
- ns
0.1
1
10
100
10
1
0.1
V
DD
=
150
V
V
GS
= 10
V
R
G
=
10
t
d(off)
t
d(on)
t
f
t
r
I
D
- Drain Current - A
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
rr
- Revers
e Rec
o
very T
i
m
e
- ns
1
10
100
0.1
10000
1000
100
10
di/dt = 50 A/ s
V
GS
= 0 V
I
F
- Diode Forward Current - A
V
DS
- Drai
n t
o
S
ourc
e
V
o
l
t
age - V
0
8
4
12
16
600
400
200
0
16
14
12
10
8
6
4
2
0
V
DS
I
D
= 2.0 A
V
GS
800
V
DD
= 450 V
300 V
150 V
Q
G
- Gate Charge - nC
V
GS
- Gat
e
t
o
S
ourc
e
V
o
l
t
age - V
Data Sheet D13789EJ1V0DS
6
2SK3221
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
I
AS
- S
i
ngl
e A
v
al
anc
he Current
- A
100
1 m
10 m
100
1
10
0.1
10
R
G
= 25
V
DD
= 150 V
V
GS
= 20
0 V
Starting T
ch
= 25
C
E
AS
= 2.7 mJ
I
AS
= 2.0 A
L - Inductive Load - H
E
nergy Derat
i
ng Fac
t
or - %
75
150
125
50
100
25
V
DD
= 150 V
R
G
= 25
V
GS
= 20
0 V
I
AS
2.0 A
0
20
40
60
80
100
Starting T
ch
- Starting Channel Temperature - C
Data Sheet D13789EJ1V0DS
7
2SK3221
PACKAGE DRAWING (Unit: mm)
Isolated TO-220 (MP-45F)
1. Gate
2. Drain
3. Source
10.00.3
3.20.2
2.70.2
1.30.2
0.70.1
2.54 TYP.
2.54 TYP.
1.50.2
1 2 3
40.2
13.5 MIN.
12.00.2
15.00.3
30.1
4.50.2
2.50.1
0.650.1
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
2SK3221
M8E 00. 4
The information in this document is current as of June, 2002. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
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