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confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1999, 2000
MOS FIELD EFFECT TRANSISTOR
2SK3297
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D14058EJ1V0DS00 (1st edition)
Date Published November 2000 NS CP (K)
Printed in Japan
DATA SHEET
DESCRIPTION
The 2SK3297 is N-channel DMOS FET device that features a
low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
Low gate charge
Q
G
= 18 nC
TYP. (V
DD
= 450 V, V
GS
= 10 V, I
D
= 5.0 A)
Gate voltage rating
30 V
Low on-state resistance
R
DS(ON)
= 1.6
MAX. (V
GS
= 10 V, I
D
= 2.5 V)
Avalanche capability ratings
Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
600
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
30
V
Drain Current(DC) (T
C
= 25C)
I
D(DC)
5.0
A
Drain Current(pulse)
Note1
I
D(pulse)
20
A
Total Power Dissipation (T
A
= 25C)
P
T1
2.0
W
Total Power Dissipation (T
C
= 25C)
P
T2
35
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
-
55 to +150
C
Single Avalanche Current
Note2
I
AS
5.0
A
Single Avalanche Energy
Note2
E
AS
16.7
mJ
Notes1. PW
10
s, Duty Cycle
1%
2. Starting T
ch
= 25C, V
DD
= 150 V, R
G
= 25
, V
GS
= 20
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3297
Isolated TO-220
(Isolated TO-220)
Data Sheet D14058EJ1V0DS
2
2SK3297
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 600 V, V
GS
= 0 V
100
A
Gate Leakage Current
I
GSS
V
GS
=
30 V, V
DS
= 0 V
100
nA
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
2.5
3.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 2.5 A
1.5
S
Drain to Source On-state Resistance
R
DS(on)
V
GS
= 10 V, I
D
= 2.5 A
1.3
1.6
Input Capacitance
C
iss
V
DS
= 10 V
750
pF
Output Capacitance
C
oss
V
GS
= 0 V
130
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
9.7
pF
Turn-on Delay Time
t
d(on)
V
DD
= 150 V, I
D
= 2.5 A
17
ns
Rise Time
t
r
V
GS(on)
= 10 V
3
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
37
ns
Fall Time
t
f
10
ns
Total Gate Charge
Q
G
V
DD
= 450 V
18
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
4
nC
Gate to Drain Charge
Q
GD
I
D
= 5.0 A
7
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 5.0 A, V
GS
= 0 V
0.9
V
Reverse Recovery Time
t
rr
I
F
= 5.0 A, V
GS
= 0 V
1.4
s
Reverse Recovery Charge
Q
rr
di/dt = 50 A/
s
5.3
C
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
PG.
L
V
DD
V
GS
= 20
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1%
V
GS
Wave Form
I
D
Wave Form
V
GS
10%
90%
V
GS
(on)
10%
0
I
D
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
Data Sheet D14058EJ1V0DS
3
2SK3297
TYPICAL CHARACTERISTICS
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
0
0
40
30
10
8
6
4
12
10
20
Pulsed
2
V
GS
=10 V
8.0 V
6.0 V
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
Pulsed
0
5
10
15
V
DS
= 10 V
10
1
0.1
0.01
100
T
ch
=
-
25C
25C
75C
125C
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(off)
- Gate to Source Cut-off Voltage - V
V
DS
= 10 V
I
D
= 1 mA
0
1
2
3
4
-
50
0
50
100
150
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
Pulsed
V
DS
= 10 V
| y
fs
| - Forward Transfer Admittance - S
I
D
- Drain Current - A
10
1
0.1
0.1
1
10
T
ch
=
-
25C
25C
75C
125C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance -
0
10
5
15
20
2
4
3
0
1
Pulsed
I
D
= 5.0 A
2.5 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance -
1
10
1
0.1
2
3
4
100
Pulsed
0
V
GS
= 10 V
20 V
Data Sheet D14058EJ1V0DS
4
2SK3297
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
R
DS(on)
- Drain to Source On-state Resistance -
0
-
50
2
1
0
50
100
150
4
3
2.5 A
V
GS
= 10 V
Pulsed
I
D
= 5.0 A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
I
SD
- Diode Forward Current - A
0
1.5
V
SD
- Source to Drain Voltage - V
1
0.5
Pulsed
0.1
0.01
1
10
100
0 V
V
GS
= 10 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
0.1
10
1
100
1000
10000
1
10
1000
100
V
GS
= 0 V
f = 1 MHz
C
oss
C
rss
C
iss
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
10
1
0.1
1
100
10
t
f
t
r
t
d(on)
t
d(off)
V
DD
= 150 V
V
GS
= 10 V
R
G
= 10
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
I
SD
- Diode Forward Current - A
t
rr
- Reverse Recovery Time - ns
di/dt = 50 A/ s
V
GS
= 0 V
0.1
100
1
10
10000
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
0
16
24
8
32
400
200
600
4
2
0
8
6
V
DS
16
14
12
10
V
GS
I
D
= 5.0 A
V
DD
= 450 V
300 V
150 V
Data Sheet D14058EJ1V0DS
5
2SK3297
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
ch
- Channel Temperature - C
dT - Percentage of Rated Power - %
0
40
20
60
100
140
80
120
160
0
20
40
60
80
100
T
C
- Case Temperature - C
P
T
- Total Power Dissipation - W
0
0
80
20
40
60
100
140
120
160
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
10
20
30
40
FORWARD BIAS SAFE OPERATING AREA
1
10
1000
100
I
D
- Drain Current - A
0.1
V
DS
- Drain to Source Voltage - V
100
10
1
Po
wer Dissipation Limited
100
s
1 ms
3 ms
10
ms
PW
= 10
s
I
D(DC)
I
D(pulse)
30 ms
100 ms
T
C
= 25C
Single Pulse
R
DS(on)
Limited
(@V
GS
= 10 V)
PW - Pulse Width - sec
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
- Transient Thermal Resistance -
C
/W
10
0.01
0.1
1
100
1 m
10 m
100 m
1
10
100
1000
Single Pulse
10
100
R
th(ch-C)
= 3.57C/W
R
th(ch-A)
= 62.5C/W
Data Sheet D14058EJ1V0DS
6
2SK3297
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
L - Inductive Load - mH
I
AS
- Single Avalanche Current - A
1
10
100
1
10
V
DD
= 150 V
V
GS
= 20
0 V
R
G
= 25
Starting Tch = 25
C
I
AS
= 5.0 A
0.01
0.1
0.1
E
AS
= 16.7
mJ
SINGLE AVALANCHE ENERGY
DERATING FACTOR
75
150
125
Starting T
ch
- Starting Channel Temperature - C
Energy Derating Factor - %
50
100
25
V
DD
= 150 V
R
G
= 25
V
GS
= 20
0
V
I
AS
5.0 A
100
80
60
40
20
0
Data Sheet D14058EJ1V0DS
7
2SK3297
PACKAGE DRAWING(Unit: mm)
Isolated TO-220 (MP-45F)
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible,
and quickly dissipate it once, when it has occurred.
1.Gate
2.Drain
3.Source
10.00.3
3.20.2
15.00.3
30.1
12.00.2
13.5 MIN.
40.2
0.70.1
1.30.2
1.50.2
2.54 TYP.
2.54 TYP.
1 2 3
2.50.1
0.650.1
4.50.2
2.70.2
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Drain
2SK3297
M8E 00. 4
The information in this document is current as of November, 2000. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
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